Diod - Pembetulan - Bujang | Produk Semikonduktor Diskrit | 2

GP2D003A060C

bahagian bahagian: 124592

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 3A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.65V @ 3A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Global Power Technologies Group

GP2D008A120A

bahagian bahagian: 12482

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 24A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 8A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Global Power Technologies Group

GP2D005A065A

bahagian bahagian: 43140

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 15A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.65V @ 5A, Kepantasan: No Recovery Time > 500mA (Io),

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Global Power Technologies Group

GP2D012A065A

bahagian bahagian: 12864

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 12A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.65V @ 12A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Global Power Technologies Group

GP2D006A060A

bahagian bahagian: 18126

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 6A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.65V @ 6A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Global Power Technologies Group

GP2D020A060B

bahagian bahagian: 10017

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 58A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.65V @ 20A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Global Power Technologies Group

GP2D005A060A

bahagian bahagian: 32164

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 15A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.65V @ 5A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Global Power Technologies Group

GP2D012A060D

bahagian bahagian: 9856

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 12A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.65V @ 12A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Global Power Technologies Group

GP2D006A060C

bahagian bahagian: 22992

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 6A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.65V @ 6A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Global Power Technologies Group

GP2D008A120C

bahagian bahagian: 12548

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 24A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 8A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Global Power Technologies Group

GP2D015A120A

bahagian bahagian: 6601

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 50A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 15A, Kepantasan: No Recovery Time > 500mA (Io),

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Global Power Technologies Group

GP2D012A060A

bahagian bahagian: 9802

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 12A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.65V @ 12A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Global Power Technologies Group

GP2D003A060A

bahagian bahagian: 32449

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 3A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.65V @ 3A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Global Power Technologies Group

GP2D012A065C

bahagian bahagian: 88

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 29A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.9V @ 12A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Global Power Technologies Group

GSXD300A170S2D5

bahagian bahagian: 1548

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1700V, Semasa - Rata-rata Disahkan (Io): 300A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.9V @ 300A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 540ns,

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Global Power Technologies Group

GP2D010A060A

bahagian bahagian: 17959

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 30A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.65V @ 10A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Global Power Technologies Group

GP2D020A120A

bahagian bahagian: 2898

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 20A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 20A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Global Power Technologies Group

GP2D003A065C

bahagian bahagian: 46386

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.65V @ 3A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Global Power Technologies Group

GP2D005A065C

bahagian bahagian: 63819

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 15A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.65V @ 5A, Kepantasan: No Recovery Time > 500mA (Io),

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Global Power Technologies Group

GP2D036A060B

bahagian bahagian: 7919

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 82A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.9V @ 36A, Kepantasan: No Recovery Time > 500mA (Io),

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Global Power Technologies Group

GP2D010A065C

bahagian bahagian: 32469

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 30A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.65V @ 10A, Kepantasan: No Recovery Time > 500mA (Io),

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Global Power Technologies Group

GP2D003A065A

bahagian bahagian: 46379

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 3A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.65V @ 3A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Global Power Technologies Group

GP2D030A060B

bahagian bahagian: 5912

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 30A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.65V @ 30A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Global Power Technologies Group

GDP60Z120E

bahagian bahagian: 2254

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 60A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 60A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Global Power Technologies Group

GDP08S120A

bahagian bahagian: 2165

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 8A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Global Power Technologies Group

GP2D010A120A

bahagian bahagian: 7354

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 10A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Global Power Technologies Group

GDP15S120B

bahagian bahagian: 5232

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 15A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 15A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Global Power Technologies Group

GP2D005A120A

bahagian bahagian: 20996

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 5A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Global Power Technologies Group

GP2D010A170B

bahagian bahagian: 3924

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1700V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.75V @ 10A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Global Power Technologies Group

GDP06S060A

bahagian bahagian: 2241

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 6A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 6A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Global Power Technologies Group

GP2D005A170B

bahagian bahagian: 6213

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1700V, Semasa - Rata-rata Disahkan (Io): 5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.75V @ 5A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Global Power Technologies Group

GP2D005A120C

bahagian bahagian: 20934

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 5A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Global Power Technologies Group

GP2D050A120B

bahagian bahagian: 2553

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 50A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 50A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Global Power Technologies Group

GDP12S060A

bahagian bahagian: 5283

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 12A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 12A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Global Power Technologies Group

GDP03S060C

bahagian bahagian: 2176

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 3A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 3A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Global Power Technologies Group

GDP30S120B

bahagian bahagian: 2237

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 30A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 30A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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