Menu
MelayuMelayu
Rfqs / order.
0Rfqs / order.

Transistor - FET, MOSFET - Bujang

  • Rumah
  •  
  • Transistor - FET, MOSFET - Bujang
IRLR3715PBF
Infineon Technologies

IRLR3715PBF

bahagian bahagian: 1570

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 54A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 14 mOhm @ 26A, 10V,

Senarai harapan
IPA50R650CE
Infineon Technologies

IPA50R650CE

bahagian bahagian: 1489

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.1A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 13V, Rds On (Maks) @ Id, Vgs: 650 mOhm @ 1.8A, 13V,

Senarai harapan
IRLMS1503TRPBF
Infineon Technologies

IRLMS1503TRPBF

bahagian bahagian: 165335

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 2.2A, 10V,

Senarai harapan
IPW60R070CFD7XKSA1
Infineon Technologies

IPW60R070CFD7XKSA1

bahagian bahagian: 10035

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 31A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 15.1A, 10V,

Senarai harapan
IRLH6224TR2PBF
Infineon Technologies

IRLH6224TR2PBF

bahagian bahagian: 1354

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 28A (Ta), 105A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 3 mOhm @ 20A, 4.5V,

Senarai harapan
SPD50N03S207GBTMA1
Infineon Technologies

SPD50N03S207GBTMA1

bahagian bahagian: 1436

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 7.3 mOhm @ 50A, 10V,

Senarai harapan
IPB60R600C6ATMA1
Infineon Technologies

IPB60R600C6ATMA1

bahagian bahagian: 1422

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.3A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 600 mOhm @ 2.4A, 10V,

Senarai harapan
IPB049N06L3GATMA1
Infineon Technologies

IPB049N06L3GATMA1

bahagian bahagian: 6214

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 80A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 4.7 mOhm @ 80A, 10V,

Senarai harapan
IPB45N04S4L08ATMA1
Infineon Technologies

IPB45N04S4L08ATMA1

bahagian bahagian: 1227

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 45A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 7.6 mOhm @ 45A, 10V,

Senarai harapan
IPB60R385CPATMA1
Infineon Technologies

IPB60R385CPATMA1

bahagian bahagian: 1429

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 385 mOhm @ 5.2A, 10V,

Senarai harapan
IPD053N06N3GBTMA1
Infineon Technologies

IPD053N06N3GBTMA1

bahagian bahagian: 1420

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 90A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 5.3 mOhm @ 90A, 10V,

Senarai harapan
IPB030N08N3GATMA1
Infineon Technologies

IPB030N08N3GATMA1

bahagian bahagian: 9954

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 160A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 3 mOhm @ 100A, 10V,

Senarai harapan
IRLMS5703TRPBF
Infineon Technologies

IRLMS5703TRPBF

bahagian bahagian: 131194

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 180 mOhm @ 1.6A, 10V,

Senarai harapan
IRLU120NPBF
Infineon Technologies

IRLU120NPBF

bahagian bahagian: 84219

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 185 mOhm @ 6A, 10V,

Senarai harapan
IPA65R190C6XKSA1
Infineon Technologies

IPA65R190C6XKSA1

bahagian bahagian: 38526

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20.2A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 190 mOhm @ 7.3A, 10V,

Senarai harapan
SPP80P06PHXKSA1
Infineon Technologies

SPP80P06PHXKSA1

bahagian bahagian: 12808

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 80A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 23 mOhm @ 64A, 10V,

Senarai harapan
IPI65R310CFDXKSA1
Infineon Technologies

IPI65R310CFDXKSA1

bahagian bahagian: 51281

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11.4A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 310 mOhm @ 4.4A, 10V,

Senarai harapan
IPI65R660CFDXKSA1
Infineon Technologies

IPI65R660CFDXKSA1

bahagian bahagian: 71643

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 660 mOhm @ 2.1A, 10V,

Senarai harapan
IRFR6215TRLPBF
Infineon Technologies

IRFR6215TRLPBF

bahagian bahagian: 130362

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 295 mOhm @ 6.6A, 10V,

Senarai harapan
IPI65R280C6XKSA1
Infineon Technologies

IPI65R280C6XKSA1

bahagian bahagian: 47019

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13.8A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 280 mOhm @ 4.4A, 10V,

Senarai harapan
IPD042P03L3GBTMA1
Infineon Technologies

IPD042P03L3GBTMA1

bahagian bahagian: 1476

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 70A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 4.2 mOhm @ 70A, 10V,

Senarai harapan
IPP65R600C6XKSA1
Infineon Technologies

IPP65R600C6XKSA1

bahagian bahagian: 76169

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.3A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 600 mOhm @ 2.1A, 10V,

Senarai harapan
IPB041N04NGATMA1
Infineon Technologies

IPB041N04NGATMA1

bahagian bahagian: 1446

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 80A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 4.1 mOhm @ 80A, 10V,

Senarai harapan
IRF8306MTRPBF
Infineon Technologies

IRF8306MTRPBF

bahagian bahagian: 1248

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 23A (Ta), 140A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 2.5 mOhm @ 23A, 10V,

Senarai harapan
IRLMS6702TRPBF
Infineon Technologies

IRLMS6702TRPBF

bahagian bahagian: 167182

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.7V, 4.5V, Rds On (Maks) @ Id, Vgs: 200 mOhm @ 1.6A, 4.5V,

Senarai harapan
IPP120N04S401AKSA1
Infineon Technologies

IPP120N04S401AKSA1

bahagian bahagian: 52617

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.9 mOhm @ 100A, 10V,

Senarai harapan
IPB065N15N3GE8187ATMA1
Infineon Technologies

IPB065N15N3GE8187ATMA1

bahagian bahagian: 1434

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 130A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 8V, 10V, Rds On (Maks) @ Id, Vgs: 6.5 mOhm @ 100A, 10V,

Senarai harapan
IPI100N04S4H2AKSA1
Infineon Technologies

IPI100N04S4H2AKSA1

bahagian bahagian: 72273

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 2.7 mOhm @ 100A, 10V,

Senarai harapan
IPB023N06N3GATMA1
Infineon Technologies

IPB023N06N3GATMA1

bahagian bahagian: 1448

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 140A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 2.3 mOhm @ 100A, 10V,

Senarai harapan
SPD30N03S2L20GBTMA1
Infineon Technologies

SPD30N03S2L20GBTMA1

bahagian bahagian: 1400

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 18A, 10V,

Senarai harapan
IRFP140NPBF
Infineon Technologies

IRFP140NPBF

bahagian bahagian: 34443

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 33A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 52 mOhm @ 16A, 10V,

Senarai harapan
IRLTS2242TRPBF
Infineon Technologies

IRLTS2242TRPBF

bahagian bahagian: 144582

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.9A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 32 mOhm @ 6.9A, 4.5V,

Senarai harapan
IRF8306MTR1PBF
Infineon Technologies

IRF8306MTR1PBF

bahagian bahagian: 1377

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 23A (Ta), 140A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 2.5 mOhm @ 23A, 10V,

Senarai harapan
IPB144N12N3GATMA1
Infineon Technologies

IPB144N12N3GATMA1

bahagian bahagian: 9964

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 120V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 56A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 14.4 mOhm @ 56A, 10V,

Senarai harapan
IRFR812PBF
Infineon Technologies

IRFR812PBF

bahagian bahagian: 1397

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.6A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V,

Senarai harapan
IPB60R299CPATMA1
Infineon Technologies

IPB60R299CPATMA1

bahagian bahagian: 1478

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 299 mOhm @ 6.6A, 10V,

Senarai harapan