Transistor - FET, MOSFET - Susunan | Produk Semikonduktor Diskrit | 11

2N7002DW L6327

bahagian bahagian: 2853

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 300mA, Rds On (Maks) @ Id, Vgs: 3 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Infineon Technologies

2N7002DWH6327XTSA1

bahagian bahagian: 174403

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 300mA, Rds On (Maks) @ Id, Vgs: 3 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Infineon Technologies

94-3449

bahagian bahagian: 2628

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.4A, Rds On (Maks) @ Id, Vgs: 105 mOhm @ 3.4A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Infineon Technologies

AUIRF7103Q

bahagian bahagian: 3052

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, Rds On (Maks) @ Id, Vgs: 130 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Infineon Technologies

AUIRF7309QTR

bahagian bahagian: 108112

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, 3A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 2.4A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Infineon Technologies

AUIRF7343QTR

bahagian bahagian: 94872

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.7A, 3.4A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 4.7A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Infineon Technologies

AUIRF7303QTR

bahagian bahagian: 101171

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 2.7A, 10V, Vgs (th) (Maks) @ Id: 3V @ 100µA,

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Infineon Technologies

AUIRF9952Q

bahagian bahagian: 2919

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A, 2.3A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 2.2A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Infineon Technologies

AUIRF7379Q

bahagian bahagian: 2916

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.8A, 4.3A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 5.8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Infineon Technologies

AUIRF7342Q

bahagian bahagian: 3348

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.4A, Rds On (Maks) @ Id, Vgs: 105 mOhm @ 3.4A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Infineon Technologies

AUIRF7341Q

bahagian bahagian: 2859

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.1A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 5.1A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Infineon Technologies

AUIRF7319Q

bahagian bahagian: 2903

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.5A, 4.9A, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 5.8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Infineon Technologies

AUIRF7313Q

bahagian bahagian: 2913

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.9A, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 6.9A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Infineon Technologies

AUIRF7316Q

bahagian bahagian: 5424

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Rds On (Maks) @ Id, Vgs: 58 mOhm @ 4.9A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Infineon Technologies

AUIRF7304Q

bahagian bahagian: 2891

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.3A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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Infineon Technologies

AUIRF7309Q

bahagian bahagian: 2875

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, 3A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 2.4A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Infineon Technologies

AUIRF7303Q

bahagian bahagian: 2880

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 2.7A, 10V, Vgs (th) (Maks) @ Id: 3V @ 100µA,

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Infineon Technologies

AUIRF7343Q

bahagian bahagian: 2791

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.7A, 3.4A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 4.7A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Infineon Technologies

AUIRFN8459TR

bahagian bahagian: 64112

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A, Rds On (Maks) @ Id, Vgs: 5.9 mOhm @ 40A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 50µA,

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Infineon Technologies

AUIRFN8458TR

bahagian bahagian: 79588

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 43A (Tc), Rds On (Maks) @ Id, Vgs: 10 mOhm @ 26A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 25µA,

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Infineon Technologies

AUIRF7341QTR

bahagian bahagian: 89718

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.1A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 5.1A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Infineon Technologies

AUIRF7319QTR

bahagian bahagian: 89679

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.5A, 4.9A, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 5.8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Infineon Technologies

AUIRF7316QTR

bahagian bahagian: 89739

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Rds On (Maks) @ Id, Vgs: 58 mOhm @ 4.9A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Infineon Technologies

AUIRF7342QTR

bahagian bahagian: 91383

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.4A, Rds On (Maks) @ Id, Vgs: 105 mOhm @ 3.4A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Infineon Technologies

AUIRF7313QTR

bahagian bahagian: 94924

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.9A, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 6.9A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Infineon Technologies

AUIRF7304QTR

bahagian bahagian: 101244

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.3A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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Infineon Technologies

AUIRF7379QTR

bahagian bahagian: 101249

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.8A, 4.3A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 5.8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Infineon Technologies

AUIRF7103QTR

bahagian bahagian: 121994

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, Rds On (Maks) @ Id, Vgs: 130 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Infineon Technologies

AUIRF9952QTR

bahagian bahagian: 125213

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A, 2.3A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 2.2A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Infineon Technologies

BSL308CH6327XTSA1

bahagian bahagian: 146163

Jenis FET: N and P-Channel Complementary, Ciri FET: Logic Level Gate, 4.5V Drive, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.3A, 2A, Rds On (Maks) @ Id, Vgs: 57 mOhm @ 2.3A, 10V, Vgs (th) (Maks) @ Id: 2V @ 11µA,

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Infineon Technologies

BSC0911NDATMA1

bahagian bahagian: 94888

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, 4.5V Drive, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 18A, 30A, Rds On (Maks) @ Id, Vgs: 3.2 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

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Infineon Technologies

BSO615NGHUMA1

bahagian bahagian: 20316

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.6A, Rds On (Maks) @ Id, Vgs: 150 mOhm @ 2.6A, 4.5V, Vgs (th) (Maks) @ Id: 2V @ 20µA,

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Infineon Technologies

BSO330N02KGFUMA1

bahagian bahagian: 3005

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.4A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 20µA,

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Infineon Technologies

BTS7904SAKSA1

bahagian bahagian: 2985

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 55V, 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 40µA,

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Infineon Technologies

BSO4804HUMA2

bahagian bahagian: 2904

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Ta), Rds On (Maks) @ Id, Vgs: 20 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2V @ 30µA,

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Infineon Technologies

BSL806NL6327HTSA1

bahagian bahagian: 2870

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.3A, Rds On (Maks) @ Id, Vgs: 57 mOhm @ 2.3A, 2.5V, Vgs (th) (Maks) @ Id: 750mV @ 11µA,

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