Menu
MelayuMelayu
Rfqs / order.
0Rfqs / order.

Transistor - Bipolar (BJT) - Tunggal, Pra Bias

  • Rumah
  •  
  • Transistor - Bipolar (BJT) - Tunggal, Pra Bias
BCR 135F E6327
Infineon Technologies

BCR 135F E6327

bahagian bahagian: 2128

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Senarai harapan
BCR158E6327HTSA1
Infineon Technologies

BCR158E6327HTSA1

bahagian bahagian: 111325

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Senarai harapan
BCR562E6327HTSA1
Infineon Technologies

BCR562E6327HTSA1

bahagian bahagian: 174692

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V,

Senarai harapan
BCR198E6393HTSA1
Infineon Technologies

BCR198E6393HTSA1

bahagian bahagian: 2061

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Senarai harapan
BCR 519 E6327
Infineon Technologies

BCR 519 E6327

bahagian bahagian: 2048

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 5V,

Senarai harapan
BCR 198T E6327
Infineon Technologies

BCR 198T E6327

bahagian bahagian: 2013

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 70mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Senarai harapan
BCR166WE6327HTSA1
Infineon Technologies

BCR166WE6327HTSA1

bahagian bahagian: 2057

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Senarai harapan
BCR 162L3 E6327
Infineon Technologies

BCR 162L3 E6327

bahagian bahagian: 2049

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V,

Senarai harapan
BCR141WE6327HTSA1
Infineon Technologies

BCR141WE6327HTSA1

bahagian bahagian: 2073

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

Senarai harapan
BCR 119 E6433
Infineon Technologies

BCR 119 E6433

bahagian bahagian: 2021

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Senarai harapan
BCR 129F E6327
Infineon Technologies

BCR 129F E6327

bahagian bahagian: 2023

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Senarai harapan
BCR 133F B6327
Infineon Technologies

BCR 133F B6327

bahagian bahagian: 1978

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

Senarai harapan
BCR108WE6327BTSA1
Infineon Technologies

BCR108WE6327BTSA1

bahagian bahagian: 2069

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Senarai harapan
BCR 101T E6327
Infineon Technologies

BCR 101T E6327

bahagian bahagian: 1992

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 100 kOhms, Perintang - Pangkalan Pemancar (R2): 100 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Senarai harapan
BCR505E6778HTSA1
Infineon Technologies

BCR505E6778HTSA1

bahagian bahagian: 5409

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V,

Senarai harapan
BCR503E6393HTSA1
Infineon Technologies

BCR503E6393HTSA1

bahagian bahagian: 1955

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 2.2 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V,

Senarai harapan
BCR183E6359HTMA1
Infineon Technologies

BCR183E6359HTMA1

bahagian bahagian: 1981

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

Senarai harapan
BCR192E6785HTSA1
Infineon Technologies

BCR192E6785HTSA1

bahagian bahagian: 1986

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Senarai harapan
BCR148E6393HTSA1
Infineon Technologies

BCR148E6393HTSA1

bahagian bahagian: 2004

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Senarai harapan
BCR135E6359HTMA1
Infineon Technologies

BCR135E6359HTMA1

bahagian bahagian: 1907

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Senarai harapan
BCR133E6393HTSA1
Infineon Technologies

BCR133E6393HTSA1

bahagian bahagian: 3211

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

Senarai harapan
BCR 148W H6433
Infineon Technologies

BCR 148W H6433

bahagian bahagian: 1910

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Senarai harapan
BCR 569 E6327
Infineon Technologies

BCR 569 E6327

bahagian bahagian: 1861

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 5V,

Senarai harapan
BCR 512 B6327
Infineon Technologies

BCR 512 B6327

bahagian bahagian: 1858

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V,

Senarai harapan
BCR 199T E6327
Infineon Technologies

BCR 199T E6327

bahagian bahagian: 1876

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 70mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Senarai harapan
BCR 503 B6327
Infineon Technologies

BCR 503 B6327

bahagian bahagian: 1882

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 2.2 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V,

Senarai harapan
BCR 199F E6327
Infineon Technologies

BCR 199F E6327

bahagian bahagian: 1910

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 70mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Senarai harapan
BCR 199L3 E6327
Infineon Technologies

BCR 199L3 E6327

bahagian bahagian: 1899

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 70mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Senarai harapan
BCR198WE6327BTSA1
Infineon Technologies

BCR198WE6327BTSA1

bahagian bahagian: 1924

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Senarai harapan
BCR 198F E6327
Infineon Technologies

BCR 198F E6327

bahagian bahagian: 1931

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Senarai harapan
BCR 198L3 E6327
Infineon Technologies

BCR 198L3 E6327

bahagian bahagian: 1885

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 70mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Senarai harapan
BCR196WE6327HTSA1
Infineon Technologies

BCR196WE6327HTSA1

bahagian bahagian: 1922

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 70mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

Senarai harapan
BCR198B6327HTLA1
Infineon Technologies

BCR198B6327HTLA1

bahagian bahagian: 1860

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Senarai harapan
BCR 196T E6327
Infineon Technologies

BCR 196T E6327

bahagian bahagian: 1855

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 70mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

Senarai harapan
BCR 196F E6327
Infineon Technologies

BCR 196F E6327

bahagian bahagian: 1930

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 70mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

Senarai harapan
BCR 196L3 E6327
Infineon Technologies

BCR 196L3 E6327

bahagian bahagian: 1883

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 70mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

Senarai harapan