Diod - Kapasitansi Berubah (Varicaps, Varactors) | Produk Semikonduktor Diskrit | 4

BBY5302WH6327XTSA1

bahagian bahagian: 7480

Kapasiti @ Vr, F: 3.1pF @ 3V, 1MHz, Nisbah Kapasiti: 2.6, Keadaan Nisbah Kapasitansi: C1/C3, Voltan - Terbalik Puncak (Maks): 6V, Jenis Diod: Single,

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Infineon Technologies

BBY5102WH6327XTSA1

bahagian bahagian: 7464

Kapasiti @ Vr, F: 3.7pF @ 4V, 1MHz, Nisbah Kapasiti: 2.2, Keadaan Nisbah Kapasitansi: C1/C4, Voltan - Terbalik Puncak (Maks): 7V, Jenis Diod: Single,

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Infineon Technologies

BB68902VH7902XTSA1

bahagian bahagian: 7489

Kapasiti @ Vr, F: 2.9pF @ 28V, 1MHz, Nisbah Kapasiti: 23.2, Keadaan Nisbah Kapasitansi: C1/C28, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single,

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Infineon Technologies

BB68902VH7908XTSA1

bahagian bahagian: 7538

Kapasiti @ Vr, F: 2.9pF @ 28V, 1MHz, Nisbah Kapasiti: 23.2, Keadaan Nisbah Kapasitansi: C1/C28, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single,

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Infineon Technologies

BB689H7903XTMA1

bahagian bahagian: 7534

Kapasiti @ Vr, F: 2.9pF @ 28V, 1MHz, Nisbah Kapasiti: 23.2, Keadaan Nisbah Kapasitansi: C1/C28, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single,

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Infineon Technologies

BB689H7908XTSA1

bahagian bahagian: 7505

Kapasiti @ Vr, F: 2.9pF @ 28V, 1MHz, Nisbah Kapasiti: 23.2, Keadaan Nisbah Kapasitansi: C1/C28, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single,

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Infineon Technologies

BB689H7902XTSA1

bahagian bahagian: 7448

Kapasiti @ Vr, F: 2.9pF @ 28V, 1MHz, Nisbah Kapasiti: 23.2, Keadaan Nisbah Kapasitansi: C1/C28, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single,

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Infineon Technologies

BB66402VH7902XTSA1

bahagian bahagian: 165267

Kapasiti @ Vr, F: 2.75pF @ 28V, 1MHz, Nisbah Kapasiti: 17.8, Keadaan Nisbah Kapasitansi: C1/C28, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single,

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Infineon Technologies

BB659C02VH7908XTSA1

bahagian bahagian: 7506

Kapasiti @ Vr, F: 2.75pF @ 28V, 1MHz, Nisbah Kapasiti: 15.3, Keadaan Nisbah Kapasitansi: C1/C28, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single,

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Infineon Technologies

BB664H7902XTSA1

bahagian bahagian: 7514

Kapasiti @ Vr, F: 2.75pF @ 28V, 1MHz, Nisbah Kapasiti: 17.8, Keadaan Nisbah Kapasitansi: C1/C28, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single,

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Infineon Technologies

BB659CH7912XTSA1

bahagian bahagian: 4837

Kapasiti @ Vr, F: 2.75pF @ 28V, 1MHz, Nisbah Kapasiti: 15.3, Keadaan Nisbah Kapasitansi: C1/C28, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single,

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Infineon Technologies

BB659CH7903XTMA1

bahagian bahagian: 7528

Kapasiti @ Vr, F: 2.75pF @ 28V, 1MHz, Nisbah Kapasiti: 15.3, Keadaan Nisbah Kapasitansi: C1/C28, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single,

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Infineon Technologies

BB659CH7902XTSA1

bahagian bahagian: 7536

Kapasiti @ Vr, F: 2.75pF @ 28V, 1MHz, Nisbah Kapasiti: 15.3, Keadaan Nisbah Kapasitansi: C1/C28, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single,

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Infineon Technologies

BB56502VH7902XTSA1

bahagian bahagian: 167849

Kapasiti @ Vr, F: 2.2pF @ 28V, 1MHz, Nisbah Kapasiti: 11, Keadaan Nisbah Kapasitansi: C1/C28, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single,

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Infineon Technologies

BB565H7903XTMA1

bahagian bahagian: 4762

Kapasiti @ Vr, F: 2.2pF @ 28V, 1MHz, Nisbah Kapasiti: 11, Keadaan Nisbah Kapasitansi: C1/C28, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single,

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Infineon Technologies

BB565H7908XTSA1

bahagian bahagian: 7479

Kapasiti @ Vr, F: 2.2pF @ 28V, 1MHz, Nisbah Kapasiti: 11, Keadaan Nisbah Kapasitansi: C1/C28, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single,

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Infineon Technologies

BB565H7902XTSA1

bahagian bahagian: 7494

Kapasiti @ Vr, F: 2.2pF @ 28V, 1MHz, Nisbah Kapasiti: 11, Keadaan Nisbah Kapasitansi: C1/C28, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single,

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Infineon Technologies

BB555H7902XTSA1

bahagian bahagian: 4767

Kapasiti @ Vr, F: 2.3pF @ 28V, 1MHz, Nisbah Kapasiti: 9.8, Keadaan Nisbah Kapasitansi: C1/C28, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single,

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Infineon Technologies

BBY 66-02V E6327

bahagian bahagian: 7461

Kapasiti @ Vr, F: 13.5pF @ 4.5V, 1MHz, Nisbah Kapasiti: 5.41, Keadaan Nisbah Kapasitansi: C1/C4.5, Voltan - Terbalik Puncak (Maks): 12V, Jenis Diod: Single,

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Infineon Technologies

BB 689 E7903

bahagian bahagian: 7446

Kapasiti @ Vr, F: 2.9pF @ 28V, 1MHz, Nisbah Kapasiti: 23.2, Keadaan Nisbah Kapasitansi: C1/C28, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single,

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Infineon Technologies

BBY5202LE6816XTMA1

bahagian bahagian: 7471

Kapasiti @ Vr, F: 1.45pF @ 4V, 1MHz, Nisbah Kapasiti: 2.1, Keadaan Nisbah Kapasitansi: C1/C4, Voltan - Terbalik Puncak (Maks): 7V, Jenis Diod: Single,

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Infineon Technologies

BB 659C E7912

bahagian bahagian: 7502

Kapasiti @ Vr, F: 2.75pF @ 28V, 1MHz, Nisbah Kapasiti: 15.3, Keadaan Nisbah Kapasitansi: C1/C28, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single,

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Infineon Technologies

BB639CE7908HTSA1

bahagian bahagian: 7455

Kapasiti @ Vr, F: 2.75pF @ 28V, 1MHz, Nisbah Kapasiti: 15.3, Keadaan Nisbah Kapasitansi: C1/C28, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single,

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Infineon Technologies

BB 555-02V E7912

bahagian bahagian: 7492

Kapasiti @ Vr, F: 2.3pF @ 28V, 1MHz, Nisbah Kapasiti: 9.8, Keadaan Nisbah Kapasitansi: C1/C28, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single,

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Infineon Technologies

BB 555 E7912

bahagian bahagian: 7497

Kapasiti @ Vr, F: 2.3pF @ 28V, 1MHz, Nisbah Kapasiti: 9.8, Keadaan Nisbah Kapasitansi: C1/C28, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single,

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Infineon Technologies

BB 857 E7902

bahagian bahagian: 7511

Kapasiti @ Vr, F: 0.52pF @ 28V, 1MHz, Nisbah Kapasiti: 12.7, Keadaan Nisbah Kapasitansi: C1/C28, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single,

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Infineon Technologies

BBY 57-02W E6327

bahagian bahagian: 7470

Kapasiti @ Vr, F: 5.5pF @ 4V, 1MHz, Nisbah Kapasiti: 4.5, Keadaan Nisbah Kapasitansi: C1/C4, Voltan - Terbalik Puncak (Maks): 10V, Jenis Diod: Single,

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Infineon Technologies

BB831E7904HTSA1

bahagian bahagian: 7490

Kapasiti @ Vr, F: 1.2pF @ 28V, 1MHz, Nisbah Kapasiti: 9.5, Keadaan Nisbah Kapasitansi: C1/C28, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single,

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Infineon Technologies

BBY 61-02LS E6327

bahagian bahagian: 7463

Nisbah Kapasiti: 2.45, Voltan - Terbalik Puncak (Maks): 10V, Jenis Diod: Single,

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Infineon Technologies

BBY6605WE6327HTSA1

bahagian bahagian: 7468

Kapasiti @ Vr, F: 13.5pF @ 4.5V, 1MHz, Nisbah Kapasiti: 5.41, Keadaan Nisbah Kapasitansi: C1/C4.5, Voltan - Terbalik Puncak (Maks): 12V, Jenis Diod: 1 Pair Common Cathode,

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Infineon Technologies

BBY 66-05 E6327

bahagian bahagian: 7484

Kapasiti @ Vr, F: 13.5pF @ 4.5V, 1MHz, Nisbah Kapasiti: 5.41, Keadaan Nisbah Kapasitansi: C1/C4.5, Voltan - Terbalik Puncak (Maks): 12V, Jenis Diod: 1 Pair Common Cathode,

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Infineon Technologies

BBY 65-02V E6327

bahagian bahagian: 7520

Kapasiti @ Vr, F: 2.8pF @ 4.7V, 1MHz, Nisbah Kapasiti: 10.9, Keadaan Nisbah Kapasitansi: C0.3/C4.7, Voltan - Terbalik Puncak (Maks): 15V, Jenis Diod: Single,

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Infineon Technologies

BBY 59-02V E6327

bahagian bahagian: 7503

Kapasiti @ Vr, F: 7.8pF @ 4V, 1MHz, Nisbah Kapasiti: 4.6, Keadaan Nisbah Kapasitansi: C1/C4, Voltan - Terbalik Puncak (Maks): 15V, Jenis Diod: Single,

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Infineon Technologies

BBY5806WE6327BTSA1

bahagian bahagian: 7439

Kapasiti @ Vr, F: 5.5pF @ 6V, 1MHz, Nisbah Kapasiti: 3.5, Keadaan Nisbah Kapasitansi: C1/C4, Voltan - Terbalik Puncak (Maks): 10V, Jenis Diod: 1 Pair Common Anode,

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Infineon Technologies

BBY5805WE6327BTSA1

bahagian bahagian: 7469

Kapasiti @ Vr, F: 5.5pF @ 6V, 1MHz, Nisbah Kapasiti: 3.5, Keadaan Nisbah Kapasitansi: C1/C4, Voltan - Terbalik Puncak (Maks): 10V, Jenis Diod: 1 Pair Common Cathode,

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Infineon Technologies

BBY5802WE6127XT

bahagian bahagian: 7484

Kapasiti @ Vr, F: 5.5pF @ 6V, 1MHz, Nisbah Kapasiti: 3.5, Keadaan Nisbah Kapasitansi: C1/C4, Voltan - Terbalik Puncak (Maks): 10V, Jenis Diod: Single,

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