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Transistor - Bipolar (BJT) - Bujang

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BFN26E6433HTMA1
Infineon Technologies

BFN26E6433HTMA1

bahagian bahagian: 6137

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 300V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 2mA, 20mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V,

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BDP954E6327HTSA1
Infineon Technologies

BDP954E6327HTSA1

bahagian bahagian: 6173

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 200mA, 2A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V,

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BDP948E6433HTMA1
Infineon Technologies

BDP948E6433HTMA1

bahagian bahagian: 6217

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 200mA, 2A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V,

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BCX6816E6327HTSA1
Infineon Technologies

BCX6816E6327HTSA1

bahagian bahagian: 6138

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 100mA, 1A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V,

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BCX6910E6327HTSA1
Infineon Technologies

BCX6910E6327HTSA1

bahagian bahagian: 6183

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 100mA, 1A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V,

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BCX55E6327HTSA1
Infineon Technologies

BCX55E6327HTSA1

bahagian bahagian: 6193

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V,

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BCX5516E6433HTMA1
Infineon Technologies

BCX5516E6433HTMA1

bahagian bahagian: 6180

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V,

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BCX5316E6433HTMA1
Infineon Technologies

BCX5316E6433HTMA1

bahagian bahagian: 6649

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V,

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BCX51E6327HTSA1
Infineon Technologies

BCX51E6327HTSA1

bahagian bahagian: 6158

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V,

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BCX52E6327HTSA1
Infineon Technologies

BCX52E6327HTSA1

bahagian bahagian: 6129

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V,

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BCW 66H E6327
Infineon Technologies

BCW 66H E6327

bahagian bahagian: 6119

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 450mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 20nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V,

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BCW 67A E6327
Infineon Technologies

BCW 67A E6327

bahagian bahagian: 6159

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 32V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 20nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V,

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BCW 66H B6327
Infineon Technologies

BCW 66H B6327

bahagian bahagian: 6151

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 450mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 20nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V,

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BCW 66G E6327
Infineon Technologies

BCW 66G E6327

bahagian bahagian: 6180

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 450mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 20nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V,

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BCW 66F E6327
Infineon Technologies

BCW 66F E6327

bahagian bahagian: 6180

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 450mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 20nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V,

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BCP 69US E6327
Infineon Technologies

BCP 69US E6327

bahagian bahagian: 6208

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 100mA, 1A, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V,

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BCP 69-16 E6327
Infineon Technologies

BCP 69-16 E6327

bahagian bahagian: 6117

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 100mA, 1A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V,

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BCP6925E6327HTSA1
Infineon Technologies

BCP6925E6327HTSA1

bahagian bahagian: 6118

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 100mA, 1A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V,

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BCP 56-10 E6433
Infineon Technologies

BCP 56-10 E6433

bahagian bahagian: 6187

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V,

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BCP 68-25 E6327
Infineon Technologies

BCP 68-25 E6327

bahagian bahagian: 6197

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 100mA, 1A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V,

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BCP55E6327HTSA1
Infineon Technologies

BCP55E6327HTSA1

bahagian bahagian: 6129

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V,

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BCP5610E6327HTSA1
Infineon Technologies

BCP5610E6327HTSA1

bahagian bahagian: 6126

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V,

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BCP54E6327HTSA1
Infineon Technologies

BCP54E6327HTSA1

bahagian bahagian: 6127

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V,

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BCP5310E6327HTSA1
Infineon Technologies

BCP5310E6327HTSA1

bahagian bahagian: 6179

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V,

Senarai harapan
BCP5216E6327HTSA1
Infineon Technologies

BCP5216E6327HTSA1

bahagian bahagian: 6140

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V,

Senarai harapan
BCP51E6327HTSA1
Infineon Technologies

BCP51E6327HTSA1

bahagian bahagian: 6152

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V,

Senarai harapan
BCP5116E6433HTMA1
Infineon Technologies

BCP5116E6433HTMA1

bahagian bahagian: 6664

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V,

Senarai harapan
BCP5116E6327HTSA1
Infineon Technologies

BCP5116E6327HTSA1

bahagian bahagian: 6154

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V,

Senarai harapan
BC860CWE6327HTSA1
Infineon Technologies

BC860CWE6327HTSA1

bahagian bahagian: 6120

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 650mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V,

Senarai harapan
BC860BWE6327HTSA1
Infineon Technologies

BC860BWE6327HTSA1

bahagian bahagian: 6638

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 650mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V,

Senarai harapan
BC 860BF E6327
Infineon Technologies

BC 860BF E6327

bahagian bahagian: 6183

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 650mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V,

Senarai harapan
BC858BWE6327HTSA1
Infineon Technologies

BC858BWE6327HTSA1

bahagian bahagian: 6671

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 650mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V,

Senarai harapan
BC858CWE6327BTSA1
Infineon Technologies

BC858CWE6327BTSA1

bahagian bahagian: 6171

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 650mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V,

Senarai harapan
BC857CWE6327BTSA1
Infineon Technologies

BC857CWE6327BTSA1

bahagian bahagian: 6197

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 650mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V,

Senarai harapan
BC857CWE6433HTMA1
Infineon Technologies

BC857CWE6433HTMA1

bahagian bahagian: 6657

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 650mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V,

Senarai harapan
BC857BWE6327BTSA1
Infineon Technologies

BC857BWE6327BTSA1

bahagian bahagian: 6708

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 650mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V,

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