Transistor - FET, MOSFET - Bujang

Rumah
Transistor - FET, MOSFET - Bujang

TP2540N3-G-P002

Microchip Technology

TP2540N3-G-P002

bahagian bahagian: 65888

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 400V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 86mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 25 Ohm @ 100mA, 10V,

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Microchip Technology

VN10KN3-G-P003

bahagian bahagian: 174415

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 310mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 5 Ohm @ 500mA, 10V,

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LND150N3-G-P002

Microchip Technology

LND150N3-G-P002

bahagian bahagian: 183557

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, Rds On (Maks) @ Id, Vgs: 1000 Ohm @ 500µA, 0V,

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TN0604N3-G-P005

Microchip Technology

TN0604N3-G-P005

bahagian bahagian: 87196

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 700mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 750 mOhm @ 1.5A, 10V,

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Microchip Technology

MCP87055T-U/LC

bahagian bahagian: 166136

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 6 mOhm @ 20A, 10V,

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TN0620N3-G-P014

Microchip Technology

TN0620N3-G-P014

bahagian bahagian: 71164

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 250mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 6 Ohm @ 500mA, 10V,

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Microchip Technology

VN2410L-G-P014

bahagian bahagian: 96918

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 240V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 190mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 10V, Rds On (Maks) @ Id, Vgs: 10 Ohm @ 500mA, 10V,

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Microchip Technology

TN2124K1-G

bahagian bahagian: 145383

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 240V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 134mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 3V, 4.5V, Rds On (Maks) @ Id, Vgs: 15 Ohm @ 120mA, 4.5V,

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Microchip Technology

VP2450N8-G

bahagian bahagian: 58167

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 160mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 30 Ohm @ 100mA, 10V,

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Microchip Technology

TP2522N8-G

bahagian bahagian: 71202

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 220V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 260mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 12 Ohm @ 200mA, 10V,

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Microchip Technology

TN5335K1-G

bahagian bahagian: 124592

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 350V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 110mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 3V, 10V, Rds On (Maks) @ Id, Vgs: 15 Ohm @ 200mA, 10V,

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Microchip Technology

TP5322N8-G

bahagian bahagian: 145311

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 220V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 260mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 12 Ohm @ 200mA, 10V,

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Microchip Technology

DN3535N8-G

bahagian bahagian: 136838

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 350V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 230mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, Rds On (Maks) @ Id, Vgs: 10 Ohm @ 150mA, 0V,

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TP0606N3-G-P002

Microchip Technology

TP0606N3-G-P002

bahagian bahagian: 102565

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 320mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 3.5 Ohm @ 750mA, 10V,

Senarai harapan

Microchip Technology

TN5325N8-G

bahagian bahagian: 158539

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 250V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 316mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 7 Ohm @ 1A, 10V,

Senarai harapan

TN5325N3-G-P002

Microchip Technology

TN5325N3-G-P002

bahagian bahagian: 145391

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 250V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 215mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 7 Ohm @ 1A, 10V,

Senarai harapan

TP0606N3-G-P003

Microchip Technology

TP0606N3-G-P003

bahagian bahagian: 102649

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 320mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 3.5 Ohm @ 750mA, 10V,

Senarai harapan

Microchip Technology

TP2510N8-G

bahagian bahagian: 81155

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 480mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 3.5 Ohm @ 750mA, 10V,

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Microchip Technology

TN0106N3-G

bahagian bahagian: 93893

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 350mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3 Ohm @ 500mA, 10V,

Senarai harapan

Microchip Technology

TP0604N3-G

bahagian bahagian: 57712

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 430mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 2 Ohm @ 1A, 10V,

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Microchip Technology

VN3205N3-G

bahagian bahagian: 56360

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.2A (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 300 mOhm @ 3A, 10V,

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Microchip Technology

VN4012L-G

bahagian bahagian: 47260

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 400V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 160mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, Rds On (Maks) @ Id, Vgs: 12 Ohm @ 100mA, 4.5V,

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Microchip Technology

VP2206N2

bahagian bahagian: 5360

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 750mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 900 mOhm @ 3.5A, 10V,

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Microchip Technology

TP2540N3-G

bahagian bahagian: 52692

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 400V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 86mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 25 Ohm @ 100mA, 10V,

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Microchip Technology

DN3545N3-G

bahagian bahagian: 104685

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 450V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 136mA, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, Rds On (Maks) @ Id, Vgs: 20 Ohm @ 150mA, 0V,

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Microchip Technology

TP2640N3-G

bahagian bahagian: 45489

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 400V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 10V, Rds On (Maks) @ Id, Vgs: 15 Ohm @ 300mA, 10V,

Senarai harapan

Microchip Technology

TN0610N3-G

bahagian bahagian: 73267

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 3V, 10V, Rds On (Maks) @ Id, Vgs: 1.5 Ohm @ 750mA, 10V,

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Microchip Technology

TP0620N3-G

bahagian bahagian: 52772

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 175mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 12 Ohm @ 200mA, 10V,

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Microchip Technology

VN2450N3-G

bahagian bahagian: 64862

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 13 Ohm @ 400mA, 10V,

Senarai harapan

Microchip Technology

TP2635N3-G

bahagian bahagian: 47311

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 350V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 10V, Rds On (Maks) @ Id, Vgs: 15 Ohm @ 300mA, 10V,

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Microchip Technology

VN0606L-G

bahagian bahagian: 62684

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 330mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 3 Ohm @ 1A, 10V,

Senarai harapan

Microchip Technology

VN2460N3-G

bahagian bahagian: 62683

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 160mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 20 Ohm @ 100mA, 10V,

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Microchip Technology

VN0808L-G

bahagian bahagian: 62599

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 300mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 4 Ohm @ 1A, 10V,

Senarai harapan

Microchip Technology

TN0606N3-G

bahagian bahagian: 93941

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 3V, 10V, Rds On (Maks) @ Id, Vgs: 1.5 Ohm @ 750mA, 10V,

Senarai harapan

Microchip Technology

VP2450N3-G

bahagian bahagian: 46076

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 30 Ohm @ 100mA, 10V,

Senarai harapan

Microchip Technology

DN2540N5-G

bahagian bahagian: 53451

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 400V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, Rds On (Maks) @ Id, Vgs: 25 Ohm @ 120mA, 0V,

Senarai harapan

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