Transistor - FET, MOSFET - Bujang

Rumah
Transistor - FET, MOSFET - Bujang

Microchip Technology

TN0104N8-G

bahagian bahagian: 87217

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 630mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 3V, 10V, Rds On (Maks) @ Id, Vgs: 2 Ohm @ 1A, 10V,

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Microchip Technology

TN0604N3-G

bahagian bahagian: 71131

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 700mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 750 mOhm @ 1.5A, 10V,

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Microchip Technology

DN2530N8-G

bahagian bahagian: 138406

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 300V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, Rds On (Maks) @ Id, Vgs: 12 Ohm @ 150mA, 0V,

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Microchip Technology

TN2504N8-G

bahagian bahagian: 89487

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 890mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 1 Ohm @ 1.5A, 10V,

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LND150N3-G-P003

Microchip Technology

LND150N3-G-P003

bahagian bahagian: 183599

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, Rds On (Maks) @ Id, Vgs: 1000 Ohm @ 500µA, 0V,

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Microchip Technology

DN2540N3-G

bahagian bahagian: 97638

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 400V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, Rds On (Maks) @ Id, Vgs: 25 Ohm @ 120mA, 0V,

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Microchip Technology

TN5335N8-G

bahagian bahagian: 108979

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 350V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 230mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 3V, 10V, Rds On (Maks) @ Id, Vgs: 15 Ohm @ 200mA, 10V,

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Microchip Technology

VN2106N3-G

bahagian bahagian: 187819

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 300mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 4 Ohm @ 500mA, 10V,

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Microchip Technology

VN3205N8-G

bahagian bahagian: 68394

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.5A (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 300 mOhm @ 1.5A, 10V,

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Microchip Technology

TN5325K1-G

bahagian bahagian: 183601

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 250V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 150mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 7 Ohm @ 1A, 10V,

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Microchip Technology

TP5322K1-G

bahagian bahagian: 166067

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 220V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 12 Ohm @ 200mA, 10V,

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Microchip Technology

VN2110K1-G

bahagian bahagian: 193820

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 4 Ohm @ 500mA, 10V,

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Microchip Technology

TN0702N3-G

bahagian bahagian: 65974

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 530mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2V, 5V, Rds On (Maks) @ Id, Vgs: 1.3 Ohm @ 500mA, 5V,

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Microchip Technology

LND01K1-G

bahagian bahagian: 142227

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 9V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 330mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, Rds On (Maks) @ Id, Vgs: 1.4 Ohm @ 100mA, 0V,

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Microchip Technology

TN2640K4-G

bahagian bahagian: 43675

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 400V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 5 Ohm @ 500mA, 10V,

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Microchip Technology

VP2106N3-G

bahagian bahagian: 146510

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 250mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 12 Ohm @ 500mA, 10V,

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Microchip Technology

VN2222LL-G

bahagian bahagian: 174426

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 230mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V,

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Microchip Technology

MIC94030BM4 TR

bahagian bahagian: 9877

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 16V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.7V, 10V, Rds On (Maks) @ Id, Vgs: 450 mOhm @ 100mA, 10V,

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Microchip Technology

MIC94052BC6-TR

bahagian bahagian: 9895

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 6V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 84 mOhm @ 100mA, 4.5V,

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Microchip Technology

MIC94053BC6-TR

bahagian bahagian: 9815

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 6V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 84 mOhm @ 100mA, 4.5V,

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Microchip Technology

MIC94050BM4 TR

bahagian bahagian: 9820

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 6V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 160 mOhm @ 100mA, 4.5V,

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Microchip Technology

MIC94051BM4 TR

bahagian bahagian: 9843

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 6V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 160 mOhm @ 100mA, 4.5V,

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Microchip Technology

TP5335K1-G

bahagian bahagian: 109016

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 350V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 85mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 30 Ohm @ 200mA, 10V,

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Microchip Technology

VP2110K1-G

bahagian bahagian: 158520

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 12 Ohm @ 500mA, 10V,

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Microchip Technology

LND250K1-G

bahagian bahagian: 182364

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, Rds On (Maks) @ Id, Vgs: 1000 Ohm @ 500µA, 0V,

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Microchip Technology

TN2524N8-G

bahagian bahagian: 81176

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 240V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 360mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 6 Ohm @ 500mA, 10V,

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Microchip Technology

MIC94052YC6-TR

bahagian bahagian: 171800

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 6V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 84 mOhm @ 100mA, 4.5V,

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Microchip Technology

MIC94031BM4 TR

bahagian bahagian: 9583

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 16V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.7V, 10V, Rds On (Maks) @ Id, Vgs: 450 mOhm @ 100mA, 10V,

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Microchip Technology

TN2106K1-G

bahagian bahagian: 193802

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 280mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 2.5 Ohm @ 500mA, 10V,

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Microchip Technology

MIC94031YM4-TR

bahagian bahagian: 9555

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 16V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.7V, 10V, Rds On (Maks) @ Id, Vgs: 450 mOhm @ 100mA, 10V,

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Microchip Technology

DN3135N8-G

bahagian bahagian: 151019

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 350V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 135mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, Rds On (Maks) @ Id, Vgs: 35 Ohm @ 150mA, 0V,

Senarai harapan

Microchip Technology

DN2540N8-G

bahagian bahagian: 115855

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 400V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 170mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, Rds On (Maks) @ Id, Vgs: 25 Ohm @ 120mA, 0V,

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Microchip Technology

DN3545N8-G

bahagian bahagian: 124604

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 450V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, Rds On (Maks) @ Id, Vgs: 20 Ohm @ 150mA, 0V,

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Microchip Technology

DN2625K4-G

bahagian bahagian: 75520

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 250V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.1A (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, Rds On (Maks) @ Id, Vgs: 3.5 Ohm @ 1A, 0V,

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Microchip Technology

VN2450N8-G

bahagian bahagian: 83065

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 250mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 13 Ohm @ 400mA, 10V,

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Microchip Technology

DN3135K1-G

bahagian bahagian: 178009

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 350V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 72mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, Rds On (Maks) @ Id, Vgs: 35 Ohm @ 150mA, 0V,

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