Transistor - FET, MOSFET - Bujang

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Transistor - FET, MOSFET - Bujang

Microchip Technology

VP0104N3-G

bahagian bahagian: 97651

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 250mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 8 Ohm @ 500mA, 10V,

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Microchip Technology

VN2210N2

bahagian bahagian: 5656

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.7A (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 350 mOhm @ 4A, 10V,

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Microchip Technology

DN2535N5-G

bahagian bahagian: 55532

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 350V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, Rds On (Maks) @ Id, Vgs: 25 Ohm @ 120mA, 0V,

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Microchip Technology

VP3203N3-G

bahagian bahagian: 50933

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 650mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 600 mOhm @ 3A, 10V,

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Microchip Technology

VN2410L-G

bahagian bahagian: 80527

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 240V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 190mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 10V, Rds On (Maks) @ Id, Vgs: 10 Ohm @ 500mA, 10V,

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Microchip Technology

VN1206L-G

bahagian bahagian: 46073

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 120V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 230mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 10V, Rds On (Maks) @ Id, Vgs: 6 Ohm @ 500mA, 10V,

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Microchip Technology

VP0808L-G

bahagian bahagian: 48896

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 280mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 5 Ohm @ 1A, 10V,

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Microchip Technology

VN10KN3-G

bahagian bahagian: 155843

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 310mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 5 Ohm @ 500mA, 10V,

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Microchip Technology

TN2640N3-G

bahagian bahagian: 48844

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 400V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 220mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 5 Ohm @ 500mA, 10V,

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Microchip Technology

VP0109N3-G

bahagian bahagian: 85226

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 90V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 250mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 8 Ohm @ 500mA, 10V,

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Microchip Technology

TN0620N3-G

bahagian bahagian: 57680

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 250mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 6 Ohm @ 500mA, 10V,

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Microchip Technology

LP0701N3-G

bahagian bahagian: 50856

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 16.5V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2V, 5V, Rds On (Maks) @ Id, Vgs: 1.5 Ohm @ 300mA, 5V,

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Microchip Technology

TP2535N3-G

bahagian bahagian: 55067

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 350V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 86mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 25 Ohm @ 100mA, 10V,

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Microchip Technology

DN2535N3-G

bahagian bahagian: 103180

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 350V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, Rds On (Maks) @ Id, Vgs: 25 Ohm @ 120mA, 0V,

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Microchip Technology

VP0106N3-G

bahagian bahagian: 93914

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 250mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 8 Ohm @ 500mA, 10V,

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Microchip Technology

VP0550N3-G

bahagian bahagian: 42651

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 54mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 125 Ohm @ 10mA, 10V,

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Microchip Technology

VN2224N3-G

bahagian bahagian: 5195

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 240V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 540mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 1.25 Ohm @ 2A, 10V,

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Microchip Technology

VN2406L-G

bahagian bahagian: 50949

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 240V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 190mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 10V, Rds On (Maks) @ Id, Vgs: 6 Ohm @ 500mA, 10V,

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Microchip Technology

TN0110N3-G

bahagian bahagian: 80557

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 350mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3 Ohm @ 500mA, 10V,

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Microchip Technology

TN2540N3-G

bahagian bahagian: 60070

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 400V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 175mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 12 Ohm @ 500mA, 10V,

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Microchip Technology

TP0606N3-G

bahagian bahagian: 85187

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 320mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 3.5 Ohm @ 750mA, 10V,

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Microchip Technology

TN2106N3-G

bahagian bahagian: 138203

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 300mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 2.5 Ohm @ 500mA, 10V,

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Microchip Technology

VN0300L-G

bahagian bahagian: 66028

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 640mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 1.2 Ohm @ 1A, 10V,

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Microchip Technology

VN0106N3-G

bahagian bahagian: 114421

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 350mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 3 Ohm @ 1A, 10V,

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Microchip Technology

VP2206N3-G

bahagian bahagian: 36646

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 640mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 900 mOhm @ 3.5A, 10V,

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Microchip Technology

TN0104N3-G

bahagian bahagian: 80546

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 450mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 3V, 10V, Rds On (Maks) @ Id, Vgs: 1.8 Ohm @ 1A, 10V,

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Microchip Technology

VN0550N3-G

bahagian bahagian: 50942

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 60 Ohm @ 50mA, 10V,

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Microchip Technology

VN2210N3-G

bahagian bahagian: 37833

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.2A (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 350 mOhm @ 4A, 10V,

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Microchip Technology

TP2104N3-G

bahagian bahagian: 120130

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 175mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 6 Ohm @ 500mA, 10V,

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Microchip Technology

DN2530N3-G

bahagian bahagian: 118177

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 300V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 175mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, Rds On (Maks) @ Id, Vgs: 12 Ohm @ 150mA, 0V,

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Microchip Technology

VN0109N3-G

bahagian bahagian: 111017

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 90V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 350mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 3 Ohm @ 1A, 10V,

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Microchip Technology

TN5325N3-G

bahagian bahagian: 126306

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 250V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 215mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 7 Ohm @ 1A, 10V,

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Microchip Technology

LND150N3-G

bahagian bahagian: 155894

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, Rds On (Maks) @ Id, Vgs: 1000 Ohm @ 500µA, 0V,

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Microchip Technology

DN2450K4-G

bahagian bahagian: 146586

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 350mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, Rds On (Maks) @ Id, Vgs: 10 Ohm @ 300mA, 0V,

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Microchip Technology

VN0104N3-G

bahagian bahagian: 120143

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 350mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 3 Ohm @ 1A, 10V,

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Microchip Technology

MIC94031CYW

bahagian bahagian: 2194

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 16V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1A (Ta), Rds On (Maks) @ Id, Vgs: 450 mOhm @ 100mA, 10V,

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