Transistor - FET, MOSFET - Susunan

BUK7K6R2-40E/CX

bahagian bahagian: 3020

PHN210,118

bahagian bahagian: 3099

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 2.2A, 10V, Vgs (th) (Maks) @ Id: 2.8V @ 1mA,

SI9936DY,518

bahagian bahagian: 3387

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

PMGD130UN,115

bahagian bahagian: 2962

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.2A, Rds On (Maks) @ Id, Vgs: 145 mOhm @ 1.2A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

PMDPB42UN,115

bahagian bahagian: 2988

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.9A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 3.9A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

PMDPB28UN,115

bahagian bahagian: 3299

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.6A, Rds On (Maks) @ Id, Vgs: 37 mOhm @ 4.6A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

PMDPB95XNE,115

bahagian bahagian: 2864

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.4A, Rds On (Maks) @ Id, Vgs: 120 mOhm @ 2A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

PMDPB65UP,115

bahagian bahagian: 2646

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 1A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

PMWD16UN,518

bahagian bahagian: 2709

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.9A, Rds On (Maks) @ Id, Vgs: 19 mOhm @ 3.5A, 4.5V, Vgs (th) (Maks) @ Id: 700mV @ 1mA,

PMWD15UN,518

bahagian bahagian: 2710

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11.6A, Rds On (Maks) @ Id, Vgs: 18.5 mOhm @ 5A, 4.5V, Vgs (th) (Maks) @ Id: 700mV @ 1mA,

PMDPB56XN,115

bahagian bahagian: 2868

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.1A, Rds On (Maks) @ Id, Vgs: 73 mOhm @ 3.1A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

PMDPB38UNE,115

bahagian bahagian: 2910

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 46 mOhm @ 3A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

PMWD20XN,118

bahagian bahagian: 2630

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10.4A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 4.2A, 10V, Vgs (th) (Maks) @ Id: 1.5V @ 1mA,

PMGD175XN,115

bahagian bahagian: 3339

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 900mA, Rds On (Maks) @ Id, Vgs: 225 mOhm @ 1A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

PMGD400UN,115

bahagian bahagian: 2691

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 710mA, Rds On (Maks) @ Id, Vgs: 480 mOhm @ 200mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

PMWD19UN,518

bahagian bahagian: 2726

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.6A, Rds On (Maks) @ Id, Vgs: 23 mOhm @ 3.5A, 4.5V, Vgs (th) (Maks) @ Id: 700mV @ 1mA,

PMWD26UN,518

bahagian bahagian: 2668

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.8A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 3.5A, 4.5V, Vgs (th) (Maks) @ Id: 700mV @ 1mA,

PMWD30UN,518

bahagian bahagian: 2661

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 33 mOhm @ 3.5A, 4.5V, Vgs (th) (Maks) @ Id: 700mV @ 1mA,

PMGD8000LN,115

bahagian bahagian: 2617

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 125mA, Rds On (Maks) @ Id, Vgs: 8 Ohm @ 10mA, 4V, Vgs (th) (Maks) @ Id: 1.5V @ 100µA,