Transistor - FET, MOSFET - Bujang

2N7002PM,315

bahagian bahagian: 2530

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 300mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V,

2N7002T,215

bahagian bahagian: 2571

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 300mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 5 Ohm @ 500mA, 10V,

2N7002K,215

bahagian bahagian: 892

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 340mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.9 Ohm @ 500mA, 10V,

2N7000,126

bahagian bahagian: 9622

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 300mA (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 5 Ohm @ 500mA, 10V,

2N7002PT,115

bahagian bahagian: 8856

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 310mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V,

2N7002BKT,115

bahagian bahagian: 8863

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 290mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V,

BUK7Y25-80E/GFX

bahagian bahagian: 2567

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 39A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 10A, 10V,

BUK7Y25-80E/CX

bahagian bahagian: 2511

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 39A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 10A, 10V,

BUK7Y25-60E/GFX

bahagian bahagian: 2552

BUK761R7-40E/GFJ

bahagian bahagian: 2563

Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V,

BUK761R5-40EJ

bahagian bahagian: 2572

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.51 mOhm @ 25A, 10V,

BUK9C1R3-40EJ

bahagian bahagian: 57

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 190A (Tc), Rds On (Maks) @ Id, Vgs: 1.3 mOhm @ 90A, 5V,

BUK951R8-40EQ

bahagian bahagian: 2593

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V,

BUK9C5R3-100EJ

bahagian bahagian: 2508

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V,

BUK9C3R8-80EJ

bahagian bahagian: 2594

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V,

BUK9C2R2-60EJ

bahagian bahagian: 2531

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V,

BUK7C4R5-100EJ

bahagian bahagian: 2529

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V,

BUK7C5R4-100EJ

bahagian bahagian: 2551

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V,

BUK7C3R1-80EJ

bahagian bahagian: 2547

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V,

BUK7C3R8-80EJ

bahagian bahagian: 2556

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V,

BUK7C1R8-60EJ

bahagian bahagian: 6258

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V,

BUK7C1R4-40EJ

bahagian bahagian: 2529

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V,

BUK7C1R2-40EJ

bahagian bahagian: 2518

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V,

BUK9Y9R9-80E,115

bahagian bahagian: 2547

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V,

BUK9Y98-80E,115

bahagian bahagian: 2588

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V,

BUK9Y7R8-80E,115

bahagian bahagian: 2582

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V,

BUK9E1R8-40E,127

bahagian bahagian: 2573

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 1.7 mOhm @ 25A, 10V,

BUK9E8R5-40E,127

bahagian bahagian: 6339

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 6.6 mOhm @ 20A, 10V,

BUK9E6R1-100E,127

bahagian bahagian: 2510

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 5.9 mOhm @ 25A, 10V,

BUK9E4R9-60E,127

bahagian bahagian: 2556

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 4.5 mOhm @ 25A, 10V,

BUK9E4R4-80E,127

bahagian bahagian: 2545

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 4.2 mOhm @ 25A, 10V,

BUK9E3R7-60E,127

bahagian bahagian: 2588

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 3.4 mOhm @ 25A, 10V,

BUK9E2R8-60E,127

bahagian bahagian: 2547

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 2.6 mOhm @ 25A, 10V,

BUK9E3R2-40E,127

bahagian bahagian: 2570

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 2.8 mOhm @ 25A, 10V,

BUK9E1R9-40E,127

bahagian bahagian: 2502

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V,

BUK9E2R3-40E,127

bahagian bahagian: 2570

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 2.2 mOhm @ 25A, 10V,