Diod - Pembetulan - Bujang | Produk Semikonduktor Diskrit | 2

1PS193,115

bahagian bahagian: 1062

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io): 215mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 100mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4ns,

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NXP USA Inc.

1PS193,135

bahagian bahagian: 5187

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io): 215mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 100mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4ns,

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NXP USA Inc.

1N914B,113

bahagian bahagian: 348

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 200mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 4ns,

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NXP USA Inc.

1N4148,113

bahagian bahagian: 9942

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 200mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 4ns,

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NXP USA Inc.

1N4148,143

bahagian bahagian: 9977

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 200mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 4ns,

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NXP USA Inc.

1N4148,133

bahagian bahagian: 9978

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 200mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 4ns,

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NXP USA Inc.

1PS59SB20,115

bahagian bahagian: 9887

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 500mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 500mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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NXP USA Inc.

1N4448,113

bahagian bahagian: 9889

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 200mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 4ns,

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NXP USA Inc.

1N4448,143

bahagian bahagian: 9886

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 200mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 4ns,

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NXP USA Inc.

1PS59SB10,115

bahagian bahagian: 9579

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 200mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 800mV @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 5ns,

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NXP USA Inc.

BAT54T,115

bahagian bahagian: 1894

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 200mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 800mV @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 5ns,

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NXP USA Inc.

BAS116T,115

bahagian bahagian: 1894

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 75V, Semasa - Rata-rata Disahkan (Io): 215mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 150mA, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 3µs,

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NXP USA Inc.

BYC8B-600PQP

bahagian bahagian: 1423

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 3.4V @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 18ns,

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NXP USA Inc.

BY229X-800,127

bahagian bahagian: 1511

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.85V @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 135ns,

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NXP USA Inc.

BYD17G,115

bahagian bahagian: 1052

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.05V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 3µs,

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NXP USA Inc.

BAW62,133

bahagian bahagian: 1029

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 75V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4ns,

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NXP USA Inc.

BY229-600,127

bahagian bahagian: 496

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 500V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.85V @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 135ns,

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NXP USA Inc.

BAT254,115

bahagian bahagian: 478

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 200mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 800mV @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 5ns,

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NXP USA Inc.

BYD17K,135

bahagian bahagian: 390

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.05V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 3µs,

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NXP USA Inc.

BYD77D,115

bahagian bahagian: 303

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 850mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 980mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 25ns,

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NXP USA Inc.

BYD37M,115

bahagian bahagian: 388

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 600mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 300ns,

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NXP USA Inc.

BYD77B,115

bahagian bahagian: 365

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 850mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 980mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 25ns,

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NXP USA Inc.

BYD17J,115

bahagian bahagian: 375

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.05V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 3µs,

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NXP USA Inc.

BYD17D,115

bahagian bahagian: 296

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.05V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 3µs,

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NXP USA Inc.

BY329X-1200,127

bahagian bahagian: 9889

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.85V @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 145ns,

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NXP USA Inc.

BY329-1500S,127

bahagian bahagian: 9919

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1500V, Semasa - Rata-rata Disahkan (Io): 6A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 6.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 160ns,

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NXP USA Inc.

BAS216,115

bahagian bahagian: 9921

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 75V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 150mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4ns,

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NXP USA Inc.

BY359-1500,127

bahagian bahagian: 9954

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1500V, Semasa - Rata-rata Disahkan (Io): 10A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 20A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 600ns,

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NXP USA Inc.

BAS216,135

bahagian bahagian: 9878

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 75V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 150mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4ns,

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NXP USA Inc.

BAS16T,115

bahagian bahagian: 9970

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 155mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 150mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 4ns,

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NXP USA Inc.

BAW62,113

bahagian bahagian: 9968

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 75V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4ns,

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NXP USA Inc.

BAW62,143

bahagian bahagian: 9956

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 75V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4ns,

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NXP USA Inc.

BAS316/ZLX

bahagian bahagian: 9620

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 215mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 150mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4ns,

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NXP USA Inc.

BAS40/ZLVL

bahagian bahagian: 9547

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 120mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 40mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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NXP USA Inc.

BAS321/ZLX

bahagian bahagian: 9538

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 200mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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NXP USA Inc.

BAS321/ZLF

bahagian bahagian: 9610

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 200mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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