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Transistor - Bipolar (BJT) - Bujang

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  • Transistor - Bipolar (BJT) - Bujang
2SC6097-E
ON Semiconductor

2SC6097-E

bahagian bahagian: 186429

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 135mV @ 100mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V,

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2SB1201S-E
ON Semiconductor

2SB1201S-E

bahagian bahagian: 145031

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V,

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2N5192G
ON Semiconductor

2N5192G

bahagian bahagian: 104656

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 4A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 1.4V @ 1A, 4A, Semasa - Potongan Pemungut (Maksimum): 1mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 1.5A, 2V,

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2SC3503CSTU
ON Semiconductor

2SC3503CSTU

bahagian bahagian: 6516

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 300V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 2mA, 20mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V,

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2SA1381FSTU
ON Semiconductor

2SA1381FSTU

bahagian bahagian: 6436

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 300V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 2mA, 20mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 10mA, 10V,

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2SA1381ESTU
ON Semiconductor

2SA1381ESTU

bahagian bahagian: 6420

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 300V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 2mA, 20mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V,

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2SA1381DSTU
ON Semiconductor

2SA1381DSTU

bahagian bahagian: 6429

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 300V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 2mA, 20mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 10V,

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2SC3503ESTU
ON Semiconductor

2SC3503ESTU

bahagian bahagian: 6443

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 300V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 2mA, 20mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V,

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2SC3503FSTU
ON Semiconductor

2SC3503FSTU

bahagian bahagian: 6481

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 300V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 2mA, 20mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 10mA, 10V,

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2SC5242RTU
ON Semiconductor

2SC5242RTU

bahagian bahagian: 40409

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 17A, Voltan - Pemecahan Pemancar Pemungut (Maks): 250V, Ketepuan Vce (Maks) @ Ib, Ic: 3V @ 800mA, 8A, Semasa - Potongan Pemungut (Maksimum): 5µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V,

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2SC3503DSTU
ON Semiconductor

2SC3503DSTU

bahagian bahagian: 6455

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 300V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 2mA, 20mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 10V,

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2SC5200RTU
ON Semiconductor

2SC5200RTU

bahagian bahagian: 21436

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 17A, Voltan - Pemecahan Pemancar Pemungut (Maks): 250V, Ketepuan Vce (Maks) @ Ib, Ic: 3V @ 800mA, 8A, Semasa - Potongan Pemungut (Maksimum): 5µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V,

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2N5172_D26Z
ON Semiconductor

2N5172_D26Z

bahagian bahagian: 6464

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 25V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V,

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2N5400
ON Semiconductor

2N5400

bahagian bahagian: 6404

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 5V,

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2SB1201S-TL-E
ON Semiconductor

2SB1201S-TL-E

bahagian bahagian: 124143

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V,

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2SD1012G-SPA
ON Semiconductor

2SD1012G-SPA

bahagian bahagian: 6385

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 700mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 15V, Ketepuan Vce (Maks) @ Ib, Ic: 80mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 280 @ 50mA, 2V,

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2N5089BU
ON Semiconductor

2N5089BU

bahagian bahagian: 6387

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 25V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V,

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2SC4617T1
ON Semiconductor

2SC4617T1

bahagian bahagian: 6254

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 60mA, Semasa - Potongan Pemungut (Maksimum): 500nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

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2SC4617
ON Semiconductor

2SC4617

bahagian bahagian: 6319

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 60mA, Semasa - Potongan Pemungut (Maksimum): 500nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

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2SA1162YT1
ON Semiconductor

2SA1162YT1

bahagian bahagian: 6263

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V,

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2SA1020G
ON Semiconductor

2SA1020G

bahagian bahagian: 6332

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

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2SA1162GT1
ON Semiconductor

2SA1162GT1

bahagian bahagian: 6328

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

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2SA1020
ON Semiconductor

2SA1020

bahagian bahagian: 6332

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

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2N6517RLRPG
ON Semiconductor

2N6517RLRPG

bahagian bahagian: 6333

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 350V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V,

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2N6517RLRP
ON Semiconductor

2N6517RLRP

bahagian bahagian: 6257

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 350V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V,

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2N6517RLRAG
ON Semiconductor

2N6517RLRAG

bahagian bahagian: 6283

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 350V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V,

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2N6517RLRA
ON Semiconductor

2N6517RLRA

bahagian bahagian: 6301

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 350V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V,

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2N6515RLRM
ON Semiconductor

2N6515RLRM

bahagian bahagian: 6248

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 250V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 45 @ 50mA, 10V,

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2N6515RLRMG
ON Semiconductor

2N6515RLRMG

bahagian bahagian: 6343

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 250V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 45 @ 50mA, 10V,

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2N6515
ON Semiconductor

2N6515

bahagian bahagian: 6285

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 250V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 45 @ 50mA, 10V,

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2N6490
ON Semiconductor

2N6490

bahagian bahagian: 6306

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 15A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 3.5V @ 5A, 15A, Semasa - Potongan Pemungut (Maksimum): 1mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 5A, 4V,

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2N6427RLRAG
ON Semiconductor

2N6427RLRAG

bahagian bahagian: 6322

Jenis Transistor: NPN - Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 500µA, 500mA, Semasa - Potongan Pemungut (Maksimum): 1µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V,

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2N6427RLRA
ON Semiconductor

2N6427RLRA

bahagian bahagian: 6293

Jenis Transistor: NPN - Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 500µA, 500mA, Semasa - Potongan Pemungut (Maksimum): 1µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V,

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2N6387
ON Semiconductor

2N6387

bahagian bahagian: 6695

Jenis Transistor: NPN - Darlington, Semasa - Pemungut (Ic) (Maks): 10A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 3V @ 100mA, 10A, Semasa - Potongan Pemungut (Maksimum): 1mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V,

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2N6426RLRA
ON Semiconductor

2N6426RLRA

bahagian bahagian: 6292

Jenis Transistor: NPN - Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 500µA, 500mA, Semasa - Potongan Pemungut (Maksimum): 1µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30000 @ 100mA, 5V,

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2N6288
ON Semiconductor

2N6288

bahagian bahagian: 6321

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 7A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 3.5V @ 3A, 7A, Semasa - Potongan Pemungut (Maksimum): 1mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 3A, 4V,

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