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Transistor - Bipolar (BJT) - Bujang

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  • Transistor - Bipolar (BJT) - Bujang
2N3704_D74Z
ON Semiconductor

2N3704_D74Z

bahagian bahagian: 5835

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V,

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2N3704_D26Z
ON Semiconductor

2N3704_D26Z

bahagian bahagian: 5779

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V,

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2SC5707-E
ON Semiconductor

2SC5707-E

bahagian bahagian: 100402

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 8A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 240mV @ 175mA, 3.5A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V,

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2N3704_D27Z
ON Semiconductor

2N3704_D27Z

bahagian bahagian: 5830

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V,

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2N3390
ON Semiconductor

2N3390

bahagian bahagian: 5812

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 25V, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 400 @ 2mA, 4.5V,

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2N3390_D75Z
ON Semiconductor

2N3390_D75Z

bahagian bahagian: 5811

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 25V, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 400 @ 2mA, 4.5V,

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2N5551_J61Z
ON Semiconductor

2N5551_J61Z

bahagian bahagian: 5768

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 160V, Ketepuan Vce (Maks) @ Ib, Ic: 200mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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2N5550_D26Z
ON Semiconductor

2N5550_D26Z

bahagian bahagian: 5768

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 140V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V,

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2N5551_J18Z
ON Semiconductor

2N5551_J18Z

bahagian bahagian: 5792

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 160V, Ketepuan Vce (Maks) @ Ib, Ic: 200mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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2N5401_D81Z
ON Semiconductor

2N5401_D81Z

bahagian bahagian: 5798

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 150V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V,

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2N5401_J05Z
ON Semiconductor

2N5401_J05Z

bahagian bahagian: 6666

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 150V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V,

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2N5401_D28Z
ON Semiconductor

2N5401_D28Z

bahagian bahagian: 5775

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 150V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V,

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2N5401_D10Z
ON Semiconductor

2N5401_D10Z

bahagian bahagian: 5823

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 150V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V,

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2N4410_D26Z
ON Semiconductor

2N4410_D26Z

bahagian bahagian: 5811

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 200mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 1V,

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2N5086TFR
ON Semiconductor

2N5086TFR

bahagian bahagian: 5718

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 50nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 150 @ 100µA, 5V,

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2N5086TF
ON Semiconductor

2N5086TF

bahagian bahagian: 5718

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 50nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 150 @ 100µA, 5V,

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2N5086TAR
ON Semiconductor

2N5086TAR

bahagian bahagian: 5747

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 50nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 150 @ 100µA, 5V,

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2N5086BU
ON Semiconductor

2N5086BU

bahagian bahagian: 5787

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 50nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 150 @ 100µA, 5V,

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2N4125TAR
ON Semiconductor

2N4125TAR

bahagian bahagian: 5776

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V,

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2N4403_D81Z
ON Semiconductor

2N4403_D81Z

bahagian bahagian: 5740

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 750mV @ 50mA, 500mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V,

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2N6518TA
ON Semiconductor

2N6518TA

bahagian bahagian: 5801

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 250V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 45 @ 50mA, 10V,

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2N6518BU
ON Semiconductor

2N6518BU

bahagian bahagian: 5774

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 250V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 45 @ 50mA, 10V,

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2N6428ABU
ON Semiconductor

2N6428ABU

bahagian bahagian: 5778

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 25nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V,

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2N5210TAR
ON Semiconductor

2N5210TAR

bahagian bahagian: 5705

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 100µA, 5V,

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2N5210NMBU
ON Semiconductor

2N5210NMBU

bahagian bahagian: 5759

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 100µA, 5V,

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2N7053_D75Z
ON Semiconductor

2N7053_D75Z

bahagian bahagian: 5696

Jenis Transistor: NPN - Darlington, Semasa - Pemungut (Ic) (Maks): 1.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 100µA, 100mA, Semasa - Potongan Pemungut (Maksimum): 200nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 5V,

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2N7053_D26Z
ON Semiconductor

2N7053_D26Z

bahagian bahagian: 5775

Jenis Transistor: NPN - Darlington, Semasa - Pemungut (Ic) (Maks): 1.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 100µA, 100mA, Semasa - Potongan Pemungut (Maksimum): 200nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 5V,

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2N7052_D74Z
ON Semiconductor

2N7052_D74Z

bahagian bahagian: 6668

Jenis Transistor: NPN - Darlington, Semasa - Pemungut (Ic) (Maks): 1.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 100µA, 100mA, Semasa - Potongan Pemungut (Maksimum): 200nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 5V,

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2SA2124-TD-E
ON Semiconductor

2SA2124-TD-E

bahagian bahagian: 142189

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 75mA, 1.5A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V,

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2SA2016-TD-E
ON Semiconductor

2SA2016-TD-E

bahagian bahagian: 104402

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 7A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 40mA, 2A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V,

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2N4401TFR
ON Semiconductor

2N4401TFR

bahagian bahagian: 135452

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 750mV @ 50mA, 500mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V,

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2SC3648T-TD-E
ON Semiconductor

2SC3648T-TD-E

bahagian bahagian: 155902

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 700mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 160V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 25mA, 250mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

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2N6427_D75Z
ON Semiconductor

2N6427_D75Z

bahagian bahagian: 5719

Jenis Transistor: NPN - Darlington, Semasa - Pemungut (Ic) (Maks): 1.2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 500µA, 500mA, Semasa - Potongan Pemungut (Maksimum): 1µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 14000 @ 500mA, 5V,

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2N5961_D27Z
ON Semiconductor

2N5961_D27Z

bahagian bahagian: 6633

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 200mV @ 500µA, 10mA, Semasa - Potongan Pemungut (Maksimum): 2nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 5V,

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2N6427_D27Z
ON Semiconductor

2N6427_D27Z

bahagian bahagian: 5650

Jenis Transistor: NPN - Darlington, Semasa - Pemungut (Ic) (Maks): 1.2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 500µA, 500mA, Semasa - Potongan Pemungut (Maksimum): 1µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 14000 @ 500mA, 5V,

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2N5551TAR
ON Semiconductor

2N5551TAR

bahagian bahagian: 5662

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 160V, Ketepuan Vce (Maks) @ Ib, Ic: 200mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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