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Transistor - Bipolar (BJT) - Bujang

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  • Transistor - Bipolar (BJT) - Bujang
BD244A
ON Semiconductor

BD244A

bahagian bahagian: 189127

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 6A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 1A, 6A, Semasa - Potongan Pemungut (Maksimum): 700µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V,

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BDX53BG
ON Semiconductor

BDX53BG

bahagian bahagian: 183172

Jenis Transistor: NPN - Darlington, Semasa - Pemungut (Ic) (Maks): 8A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 2V @ 12mA, 3A, Semasa - Potongan Pemungut (Maksimum): 500µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V,

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BD135G
ON Semiconductor

BD135G

bahagian bahagian: 128554

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V,

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BU406G
ON Semiconductor

BU406G

bahagian bahagian: 65392

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 7A, Voltan - Pemecahan Pemancar Pemungut (Maks): 200V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 500mA, 5A, Semasa - Potongan Pemungut (Maksimum): 5mA,

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BDX54BG
ON Semiconductor

BDX54BG

bahagian bahagian: 81401

Jenis Transistor: PNP - Darlington, Semasa - Pemungut (Ic) (Maks): 8A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 2V @ 12mA, 3A, Semasa - Potongan Pemungut (Maksimum): 500µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V,

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BD681S
ON Semiconductor

BD681S

bahagian bahagian: 107750

Jenis Transistor: NPN - Darlington, Semasa - Pemungut (Ic) (Maks): 4A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 2.5V @ 30mA, 1.5A, Semasa - Potongan Pemungut (Maksimum): 500µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V,

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BD13910S
ON Semiconductor

BD13910S

bahagian bahagian: 149489

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V,

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BDX33BG
ON Semiconductor

BDX33BG

bahagian bahagian: 81448

Jenis Transistor: NPN - Darlington, Semasa - Pemungut (Ic) (Maks): 10A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 2.5V @ 6mA, 3A, Semasa - Potongan Pemungut (Maksimum): 500µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V,

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BD809G
ON Semiconductor

BD809G

bahagian bahagian: 74770

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 10A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 1.1V @ 300mA, 3A, Semasa - Potongan Pemungut (Maksimum): 1mA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 15 @ 4A, 2V,

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BDW46G
ON Semiconductor

BDW46G

bahagian bahagian: 77908

Jenis Transistor: PNP - Darlington, Semasa - Pemungut (Ic) (Maks): 15A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 3V @ 50mA, 10A, Semasa - Potongan Pemungut (Maksimum): 2mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V,

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BD242BG
ON Semiconductor

BD242BG

bahagian bahagian: 116726

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 1.2V @ 600mA, 3A, Semasa - Potongan Pemungut (Maksimum): 300µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V,

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BUT11AFTU
ON Semiconductor

BUT11AFTU

bahagian bahagian: 77085

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 450V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 500mA, 2.5A, Semasa - Potongan Pemungut (Maksimum): 1mA,

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BD679AG
ON Semiconductor

BD679AG

bahagian bahagian: 106187

Jenis Transistor: NPN - Darlington, Semasa - Pemungut (Ic) (Maks): 4A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 2.8V @ 40mA, 2A, Semasa - Potongan Pemungut (Maksimum): 500µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V,

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BD788G
ON Semiconductor

BD788G

bahagian bahagian: 159272

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 4A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 2.5V @ 800mA, 4A, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 3V,

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BD676AG
ON Semiconductor

BD676AG

bahagian bahagian: 122105

Jenis Transistor: PNP - Darlington, Semasa - Pemungut (Ic) (Maks): 4A, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 2.8V @ 40mA, 2A, Semasa - Potongan Pemungut (Maksimum): 500µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V,

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BU323ZG
ON Semiconductor

BU323ZG

bahagian bahagian: 26349

Jenis Transistor: NPN - Darlington, Semasa - Pemungut (Ic) (Maks): 10A, Voltan - Pemecahan Pemancar Pemungut (Maks): 350V, Ketepuan Vce (Maks) @ Ib, Ic: 1.7V @ 250mA, 10A, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 500 @ 5A, 4.6V,

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BD437TG
ON Semiconductor

BD437TG

bahagian bahagian: 103977

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 4A, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 800mV @ 300mA, 3A, Semasa - Potongan Pemungut (Maksimum): 100µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V,

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BD139G
ON Semiconductor

BD139G

bahagian bahagian: 130827

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V,

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BD678AG
ON Semiconductor

BD678AG

bahagian bahagian: 106804

Jenis Transistor: PNP - Darlington, Semasa - Pemungut (Ic) (Maks): 4A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 2.8V @ 40mA, 2A, Semasa - Potongan Pemungut (Maksimum): 500µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V,

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BD135TG
ON Semiconductor

BD135TG

bahagian bahagian: 148462

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V,

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BF721T1G
ON Semiconductor

BF721T1G

bahagian bahagian: 125779

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 300V, Ketepuan Vce (Maks) @ Ib, Ic: 800mV @ 5mA, 30mA, Semasa - Potongan Pemungut (Maksimum): 10nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V,

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BUT11ATU
ON Semiconductor

BUT11ATU

bahagian bahagian: 173616

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 450V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 500mA, 2.5A, Semasa - Potongan Pemungut (Maksimum): 1mA,

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BD242CG
ON Semiconductor

BD242CG

bahagian bahagian: 103152

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 1.2V @ 600mA, 3A, Semasa - Potongan Pemungut (Maksimum): 300µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V,

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BDW47G
ON Semiconductor

BDW47G

bahagian bahagian: 77962

Jenis Transistor: PNP - Darlington, Semasa - Pemungut (Ic) (Maks): 15A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 3V @ 50mA, 10A, Semasa - Potongan Pemungut (Maksimum): 2mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V,

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BD435G
ON Semiconductor

BD435G

bahagian bahagian: 124139

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 4A, Voltan - Pemecahan Pemancar Pemungut (Maks): 32V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 200mA, 2A, Semasa - Potongan Pemungut (Maksimum): 100µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V,

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BUT11A
ON Semiconductor

BUT11A

bahagian bahagian: 140873

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 450V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 500mA, 2.5A, Semasa - Potongan Pemungut (Maksimum): 1mA,

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BDX53CTU
ON Semiconductor

BDX53CTU

bahagian bahagian: 95177

Jenis Transistor: NPN - Darlington, Semasa - Pemungut (Ic) (Maks): 8A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 2V @ 12mA, 3A, Semasa - Potongan Pemungut (Maksimum): 500µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V,

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BC547BBU
ON Semiconductor

BC547BBU

bahagian bahagian: 193542

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

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BDW93C
ON Semiconductor

BDW93C

bahagian bahagian: 67206

Jenis Transistor: NPN - Darlington, Semasa - Pemungut (Ic) (Maks): 12A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 3V @ 100mA, 10A, Semasa - Potongan Pemungut (Maksimum): 1mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 750 @ 5A, 3V,

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BD442G
ON Semiconductor

BD442G

bahagian bahagian: 180422

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 4A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 800mV @ 300mA, 3A, Semasa - Potongan Pemungut (Maksimum): 100µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V,

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BD679AS
ON Semiconductor

BD679AS

bahagian bahagian: 114461

Jenis Transistor: NPN - Darlington, Semasa - Pemungut (Ic) (Maks): 4A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 2.8V @ 40mA, 2A, Semasa - Potongan Pemungut (Maksimum): 500µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V,

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BD439G
ON Semiconductor

BD439G

bahagian bahagian: 144638

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 4A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 800mV @ 300mA, 3A, Semasa - Potongan Pemungut (Maksimum): 100µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V,

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BDX34CG
ON Semiconductor

BDX34CG

bahagian bahagian: 83306

Jenis Transistor: PNP - Darlington, Semasa - Pemungut (Ic) (Maks): 10A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 2.5V @ 6mA, 3A, Semasa - Potongan Pemungut (Maksimum): 500µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V,

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BD234G
ON Semiconductor

BD234G

bahagian bahagian: 196201

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 100mA, 1A, Semasa - Potongan Pemungut (Maksimum): 100µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 25 @ 1A, 2V,

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BD433S
ON Semiconductor

BD433S

bahagian bahagian: 114475

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 4A, Voltan - Pemecahan Pemancar Pemungut (Maks): 22V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 200mA, 2A, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 5V,

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BD680G
ON Semiconductor

BD680G

bahagian bahagian: 163944

Jenis Transistor: PNP - Darlington, Semasa - Pemungut (Ic) (Maks): 4A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 2.5V @ 30mA, 1.5A, Semasa - Potongan Pemungut (Maksimum): 500µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V,

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