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Transistor - Bipolar (BJT) - Bujang

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  • Transistor - Bipolar (BJT) - Bujang
BC337RL1G
ON Semiconductor

BC337RL1G

bahagian bahagian: 6696

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V,

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BC337-40ZL1G
ON Semiconductor

BC337-40ZL1G

bahagian bahagian: 6684

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V,

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BC337-25ZL1G
ON Semiconductor

BC337-25ZL1G

bahagian bahagian: 6655

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V,

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BC327-25ZL1G
ON Semiconductor

BC327-25ZL1G

bahagian bahagian: 6604

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V,

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BD441G
ON Semiconductor

BD441G

bahagian bahagian: 112735

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 4A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 800mV @ 300mA, 3A, Semasa - Potongan Pemungut (Maksimum): 100µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V,

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BC548BRL1G
ON Semiconductor

BC548BRL1G

bahagian bahagian: 6621

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

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BC557BRL1G
ON Semiconductor

BC557BRL1G

bahagian bahagian: 6672

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 650mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V,

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BC546BRL1G
ON Semiconductor

BC546BRL1G

bahagian bahagian: 6681

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 65V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

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BC517RL1G
ON Semiconductor

BC517RL1G

bahagian bahagian: 6590

Jenis Transistor: NPN - Darlington, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 100µA, 100mA, Semasa - Potongan Pemungut (Maksimum): 500nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30000 @ 20mA, 2V,

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BC337-40RL1G
ON Semiconductor

BC337-40RL1G

bahagian bahagian: 6664

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V,

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BC337-25RL1G
ON Semiconductor

BC337-25RL1G

bahagian bahagian: 6621

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V,

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BC307BRL1G
ON Semiconductor

BC307BRL1G

bahagian bahagian: 6652

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

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BC327-25RL1G
ON Semiconductor

BC327-25RL1G

bahagian bahagian: 6666

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V,

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BC237BRL1G
ON Semiconductor

BC237BRL1G

bahagian bahagian: 6672

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

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BC327-40ZL1G
ON Semiconductor

BC327-40ZL1G

bahagian bahagian: 6603

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V,

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BC557CZL1G
ON Semiconductor

BC557CZL1G

bahagian bahagian: 6613

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 650mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V,

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BC547B_J35Z
ON Semiconductor

BC547B_J35Z

bahagian bahagian: 6626

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

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BC637RL1G
ON Semiconductor

BC637RL1G

bahagian bahagian: 6603

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V,

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BD14016S
ON Semiconductor

BD14016S

bahagian bahagian: 149459

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V,

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BD13916S
ON Semiconductor

BD13916S

bahagian bahagian: 149534

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V,

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BCX71JLT1G
ON Semiconductor

BCX71JLT1G

bahagian bahagian: 6614

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 550mV @ 1.25mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 20nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V,

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BC639ZL1G
ON Semiconductor

BC639ZL1G

bahagian bahagian: 6639

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V,

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BC639RL1G
ON Semiconductor

BC639RL1G

bahagian bahagian: 6579

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V,

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BC639-16ZL1G
ON Semiconductor

BC639-16ZL1G

bahagian bahagian: 6620

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V,

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BCX799_J35Z
ON Semiconductor

BCX799_J35Z

bahagian bahagian: 6668

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 2.5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 10nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 1V,

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BCX599_J35Z
ON Semiconductor

BCX599_J35Z

bahagian bahagian: 6631

Jenis Transistor: NPN,

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BCX599_D74Z
ON Semiconductor

BCX599_D74Z

bahagian bahagian: 6556

Jenis Transistor: NPN,

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BCX599_D27Z
ON Semiconductor

BCX599_D27Z

bahagian bahagian: 6566

Jenis Transistor: NPN,

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BCX599_D26Z
ON Semiconductor

BCX599_D26Z

bahagian bahagian: 6630

Jenis Transistor: NPN,

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BC856BMTF
ON Semiconductor

BC856BMTF

bahagian bahagian: 170201

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 65V, Ketepuan Vce (Maks) @ Ib, Ic: 650mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

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BSR50_J35Z
ON Semiconductor

BSR50_J35Z

bahagian bahagian: 6508

Jenis Transistor: NPN - Darlington, Semasa - Pemungut (Ic) (Maks): 1.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 4mA, 1A, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V,

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BDW94CF
ON Semiconductor

BDW94CF

bahagian bahagian: 6487

Jenis Transistor: PNP - Darlington, Semasa - Pemungut (Ic) (Maks): 12A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 3V @ 100mA, 10A, Semasa - Potongan Pemungut (Maksimum): 1mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 750 @ 5A, 3V,

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BC640_J35Z
ON Semiconductor

BC640_J35Z

bahagian bahagian: 6460

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V,

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BC63916_J35Z
ON Semiconductor

BC63916_J35Z

bahagian bahagian: 6467

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V,

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BC639_J35Z
ON Semiconductor

BC639_J35Z

bahagian bahagian: 6518

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V,

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BC637_J35Z
ON Semiconductor

BC637_J35Z

bahagian bahagian: 6505

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V,

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