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Transistor - Bipolar (BJT) - Bujang

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  • Transistor - Bipolar (BJT) - Bujang
FJL4315OTU
ON Semiconductor

FJL4315OTU

bahagian bahagian: 25981

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 17A, Voltan - Pemecahan Pemancar Pemungut (Maks): 250V, Ketepuan Vce (Maks) @ Ib, Ic: 3V @ 800mA, 8A, Semasa - Potongan Pemungut (Maksimum): 5µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V,

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TIP100G
ON Semiconductor

TIP100G

bahagian bahagian: 87227

Jenis Transistor: NPN - Darlington, Semasa - Pemungut (Ic) (Maks): 8A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 2.5V @ 80mA, 8A, Semasa - Potongan Pemungut (Maksimum): 50µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V,

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MJE2955TTU
ON Semiconductor

MJE2955TTU

bahagian bahagian: 96394

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 10A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 8V @ 3.3A, 10A, Semasa - Potongan Pemungut (Maksimum): 700µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V,

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FJA4310OTU
ON Semiconductor

FJA4310OTU

bahagian bahagian: 38358

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 10A, Voltan - Pemecahan Pemancar Pemungut (Maks): 140V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 500mA, 5A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 3A, 4V,

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TIP41BG
ON Semiconductor

TIP41BG

bahagian bahagian: 110979

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 6A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 600mA, 6A, Semasa - Potongan Pemungut (Maksimum): 700µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V,

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KSP43BU
ON Semiconductor

KSP43BU

bahagian bahagian: 103705

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 200V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 2mA, 20mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V,

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FJP13007H2TU
ON Semiconductor

FJP13007H2TU

bahagian bahagian: 92748

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 8A, Voltan - Pemecahan Pemancar Pemungut (Maks): 400V, Ketepuan Vce (Maks) @ Ib, Ic: 3V @ 2A, 8A, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 26 @ 2A, 5V,

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MJE171G
ON Semiconductor

MJE171G

bahagian bahagian: 128514

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1.7V @ 600mA, 3A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V,

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KSB772YS
ON Semiconductor

KSB772YS

bahagian bahagian: 174395

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 200mA, 2A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V,

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D44H11TU
ON Semiconductor

D44H11TU

bahagian bahagian: 96370

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 10A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 400mA, 8A, Semasa - Potongan Pemungut (Maksimum): 10µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V,

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SFT1202-E
ON Semiconductor

SFT1202-E

bahagian bahagian: 172458

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 150V, Ketepuan Vce (Maks) @ Ib, Ic: 165mV @ 100mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V,

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NSM6056MT1G
ON Semiconductor

NSM6056MT1G

bahagian bahagian: 143978

Jenis Transistor: NPN + Zener Diode (Isolated), Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 750mV @ 50mA, 500mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V,

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SPZT2907AT1G
ON Semiconductor

SPZT2907AT1G

bahagian bahagian: 128414

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 10nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

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KSD526Y
ON Semiconductor

KSD526Y

bahagian bahagian: 130553

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 4A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 300mA, 3A, Semasa - Potongan Pemungut (Maksimum): 30µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 5V,

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FJE3303H1TU
ON Semiconductor

FJE3303H1TU

bahagian bahagian: 155822

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 400V, Ketepuan Vce (Maks) @ Ib, Ic: 3V @ 500mA, 1.5A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 8 @ 500mA, 2V,

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TIP116G
ON Semiconductor

TIP116G

bahagian bahagian: 109693

Jenis Transistor: PNP - Darlington, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 2.5V @ 8mA, 2A, Semasa - Potongan Pemungut (Maksimum): 2mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V,

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SNSS30201MR6T1G
ON Semiconductor

SNSS30201MR6T1G

bahagian bahagian: 159467

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 200mV @ 100mA, 1A, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V,

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KSD880YTU
ON Semiconductor

KSD880YTU

bahagian bahagian: 99040

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 300mA, 3A, Semasa - Potongan Pemungut (Maksimum): 100µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V,

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NJVBUB323ZT4G
ON Semiconductor

NJVBUB323ZT4G

bahagian bahagian: 40265

Jenis Transistor: NPN - Darlington, Semasa - Pemungut (Ic) (Maks): 10A, Voltan - Pemecahan Pemancar Pemungut (Maks): 350V, Ketepuan Vce (Maks) @ Ib, Ic: 1.7V @ 250mA, 10A, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 500 @ 5A, 4.6V,

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SMMBT2222AWT1G
ON Semiconductor

SMMBT2222AWT1G

bahagian bahagian: 148242

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

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KSE13003H1ASTU
ON Semiconductor

KSE13003H1ASTU

bahagian bahagian: 116288

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 400V, Ketepuan Vce (Maks) @ Ib, Ic: 3V @ 500mA, 1.5A, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 9 @ 500mA, 2V,

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KSA1220AYS
ON Semiconductor

KSA1220AYS

bahagian bahagian: 140905

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1.2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 160V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 200mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 300mA, 5V,

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MJE3055TTU
ON Semiconductor

MJE3055TTU

bahagian bahagian: 104628

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 10A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 8V @ 3.3A, 10A, Semasa - Potongan Pemungut (Maksimum): 700µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V,

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TIP42G
ON Semiconductor

TIP42G

bahagian bahagian: 116291

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 6A, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 600mA, 6A, Semasa - Potongan Pemungut (Maksimum): 700µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V,

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MJL4302AG
ON Semiconductor

MJL4302AG

bahagian bahagian: 11791

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 15A, Voltan - Pemecahan Pemancar Pemungut (Maks): 350V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 800mA, 8A, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5A, 5V,

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MJE5852G
ON Semiconductor

MJE5852G

bahagian bahagian: 25647

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 8A, Voltan - Pemecahan Pemancar Pemungut (Maks): 400V, Ketepuan Vce (Maks) @ Ib, Ic: 5V @ 3A, 8A, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V,

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TIP48G
ON Semiconductor

TIP48G

bahagian bahagian: 104688

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 300V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 200mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V,

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FJPF5021OTU
ON Semiconductor

FJPF5021OTU

bahagian bahagian: 77966

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 500V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 600mA, 3A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 600mA, 5V,

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NJL0302DG
ON Semiconductor

NJL0302DG

bahagian bahagian: 814

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 15A, Voltan - Pemecahan Pemancar Pemungut (Maks): 260V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 500mA, 5A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 75 @ 3A, 5V,

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NST489AMT1G
ON Semiconductor

NST489AMT1G

bahagian bahagian: 174046

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 200mV @ 100mA, 1A, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V,

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TIP141G
ON Semiconductor

TIP141G

bahagian bahagian: 40316

Jenis Transistor: NPN - Darlington, Semasa - Pemungut (Ic) (Maks): 10A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 3V @ 40mA, 10A, Semasa - Potongan Pemungut (Maksimum): 2mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V,

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MJD32CG
ON Semiconductor

MJD32CG

bahagian bahagian: 155811

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 1.2V @ 375mA, 3A, Semasa - Potongan Pemungut (Maksimum): 50µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V,

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FJPF5027OTU
ON Semiconductor

FJPF5027OTU

bahagian bahagian: 69809

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 800V, Ketepuan Vce (Maks) @ Ib, Ic: 2V @ 300mA, 1.5A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V,

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KSC5338DTU
ON Semiconductor

KSC5338DTU

bahagian bahagian: 154306

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 450V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 200mA, 1A, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 6 @ 2A, 1V,

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MJ11015G
ON Semiconductor

MJ11015G

bahagian bahagian: 16881

Jenis Transistor: PNP - Darlington, Semasa - Pemungut (Ic) (Maks): 30A, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 4V @ 300mA, 30A, Semasa - Potongan Pemungut (Maksimum): 1mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 20A, 5V,

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MSD42SWT1G
ON Semiconductor

MSD42SWT1G

bahagian bahagian: 157970

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 300V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 2mA, 200mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 10V,

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