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Transistor - Bipolar (BJT) - Bujang

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  • Transistor - Bipolar (BJT) - Bujang
MJD42C1G
ON Semiconductor

MJD42C1G

bahagian bahagian: 107781

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 6A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 600mA, 6A, Semasa - Potongan Pemungut (Maksimum): 50µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V,

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NSS1C201MZ4T1G
ON Semiconductor

NSS1C201MZ4T1G

bahagian bahagian: 157015

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 180mV @ 200mA, 2A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V,

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TIP29AG
ON Semiconductor

TIP29AG

bahagian bahagian: 102696

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 125mA, 1A, Semasa - Potongan Pemungut (Maksimum): 300µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V,

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TIP30CTU
ON Semiconductor

TIP30CTU

bahagian bahagian: 89372

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 125mA, 1A, Semasa - Potongan Pemungut (Maksimum): 300µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V,

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TIP142G
ON Semiconductor

TIP142G

bahagian bahagian: 42589

Jenis Transistor: NPN - Darlington, Semasa - Pemungut (Ic) (Maks): 10A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 3V @ 40mA, 10A, Semasa - Potongan Pemungut (Maksimum): 2mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V,

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TIP121G
ON Semiconductor

TIP121G

bahagian bahagian: 107776

Jenis Transistor: NPN - Darlington, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 4V @ 20mA, 5A, Semasa - Potongan Pemungut (Maksimum): 500µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V,

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KSE44H11
ON Semiconductor

KSE44H11

bahagian bahagian: 81441

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 10A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 400mA, 8A, Semasa - Potongan Pemungut (Maksimum): 10µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V,

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MJ21194G
ON Semiconductor

MJ21194G

bahagian bahagian: 12633

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 16A, Voltan - Pemecahan Pemancar Pemungut (Maks): 250V, Ketepuan Vce (Maks) @ Ib, Ic: 4V @ 3.2A, 16A, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V,

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MJB42CT4G
ON Semiconductor

MJB42CT4G

bahagian bahagian: 102840

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 6A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 600mA, 6A, Semasa - Potongan Pemungut (Maksimum): 700µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V,

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KSA473YTU
ON Semiconductor

KSA473YTU

bahagian bahagian: 91632

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 800mV @ 200mA, 2A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V,

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FJPF13009H2TU
ON Semiconductor

FJPF13009H2TU

bahagian bahagian: 63183

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 12A, Voltan - Pemecahan Pemancar Pemungut (Maks): 400V, Ketepuan Vce (Maks) @ Ib, Ic: 3V @ 3A, 12A, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V,

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MJE181STU
ON Semiconductor

MJE181STU

bahagian bahagian: 149485

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1.7V @ 600mA, 3A, Semasa - Potongan Pemungut (Maksimum): 100µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V,

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MJB41CG
ON Semiconductor

MJB41CG

bahagian bahagian: 57268

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 6A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 600mA, 6A, Semasa - Potongan Pemungut (Maksimum): 700µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V,

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SPZT751T1G
ON Semiconductor

SPZT751T1G

bahagian bahagian: 198667

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 200mA, 2A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V,

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FJA4213RTU
ON Semiconductor

FJA4213RTU

bahagian bahagian: 35973

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 17A, Voltan - Pemecahan Pemancar Pemungut (Maks): 250V, Ketepuan Vce (Maks) @ Ib, Ic: 3V @ 800mA, 8A, Semasa - Potongan Pemungut (Maksimum): 5µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V,

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NSS40300MZ4T1G
ON Semiconductor

NSS40300MZ4T1G

bahagian bahagian: 156541

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 300mA, 3A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 175 @ 1A, 1V,

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MSB92ASWT1G
ON Semiconductor

MSB92ASWT1G

bahagian bahagian: 143517

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 300V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 2mA, 20mA, Semasa - Potongan Pemungut (Maksimum): 250nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 10V,

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MJ21195G
ON Semiconductor

MJ21195G

bahagian bahagian: 17403

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 16A, Voltan - Pemecahan Pemancar Pemungut (Maks): 250V, Ketepuan Vce (Maks) @ Ib, Ic: 4V @ 3.2A, 16A, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V,

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SPZT651T1G
ON Semiconductor

SPZT651T1G

bahagian bahagian: 198496

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 200mA, 2A, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V,

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FJI5603DTU
ON Semiconductor

FJI5603DTU

bahagian bahagian: 51637

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 800V, Ketepuan Vce (Maks) @ Ib, Ic: 2.5V @ 200mA, 1A, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 400mA, 3V,

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NSS1C200MZ4T1G
ON Semiconductor

NSS1C200MZ4T1G

bahagian bahagian: 176954

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 220mV @ 200mA, 2A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V,

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SBCP53-10T1G
ON Semiconductor

SBCP53-10T1G

bahagian bahagian: 152268

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V,

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NJW21194G
ON Semiconductor

NJW21194G

bahagian bahagian: 26322

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 16A, Voltan - Pemecahan Pemancar Pemungut (Maks): 250V, Ketepuan Vce (Maks) @ Ib, Ic: 4V @ 3.2A, 16A, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 8A, 5V,

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MJ21193G
ON Semiconductor

MJ21193G

bahagian bahagian: 12632

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 16A, Voltan - Pemecahan Pemancar Pemungut (Maks): 250V, Ketepuan Vce (Maks) @ Ib, Ic: 4V @ 3.2A, 16A, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V,

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FJAF4210OTU
ON Semiconductor

FJAF4210OTU

bahagian bahagian: 37991

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 10A, Voltan - Pemecahan Pemancar Pemungut (Maks): 140V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 500mA, 5A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 3A, 4V,

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MMBT3906LT3G
ON Semiconductor

MMBT3906LT3G

bahagian bahagian: 170448

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 50mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V,

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NZT44H8
ON Semiconductor

NZT44H8

bahagian bahagian: 169630

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 8A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 400mA, 8A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V,

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KSC2073H2TU
ON Semiconductor

KSC2073H2TU

bahagian bahagian: 114488

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 150V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 60 @ 500mA, 10V,

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TIP112G
ON Semiconductor

TIP112G

bahagian bahagian: 122524

Jenis Transistor: NPN - Darlington, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 2.5V @ 8mA, 2A, Semasa - Potongan Pemungut (Maksimum): 2mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V,

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MJE170G
ON Semiconductor

MJE170G

bahagian bahagian: 128505

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 1.7V @ 600mA, 3A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V,

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MJ15016G
ON Semiconductor

MJ15016G

bahagian bahagian: 24302

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 15A, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 5V @ 7A, 15A, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 10 @ 4A, 2V,

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MJE15032G
ON Semiconductor

MJE15032G

bahagian bahagian: 46446

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 8A, Voltan - Pemecahan Pemancar Pemungut (Maks): 250V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 100mA, 1A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V,

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MJB44H11G
ON Semiconductor

MJB44H11G

bahagian bahagian: 62132

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 10A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 400mA, 8A, Semasa - Potongan Pemungut (Maksimum): 10µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V,

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TIP147TTU
ON Semiconductor

TIP147TTU

bahagian bahagian: 67881

Jenis Transistor: PNP - Darlington, Semasa - Pemungut (Ic) (Maks): 10A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 3V @ 40mA, 10A, Semasa - Potongan Pemungut (Maksimum): 2mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V,

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KSC5338D
ON Semiconductor

KSC5338D

bahagian bahagian: 73968

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 450V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 200mA, 1A, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 6 @ 2A, 1V,

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FJA13009TU
ON Semiconductor

FJA13009TU

bahagian bahagian: 46059

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 12A, Voltan - Pemecahan Pemancar Pemungut (Maks): 400V, Ketepuan Vce (Maks) @ Ib, Ic: 3V @ 3A, 12A, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V,

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