Transistor - FET, MOSFET - Bujang | Produk Semikonduktor Diskrit | 18

R6015FNX

bahagian bahagian: 11226

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 350 mOhm @ 7.5A, 10V,

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Rohm Semiconductor

RCX510N25

bahagian bahagian: 15729

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 250V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 51A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V,

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Rohm Semiconductor

R6004KNJTL

bahagian bahagian: 75363

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 980 mOhm @ 1.5A, 10V,

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Rohm Semiconductor

SCT2750NYTB

bahagian bahagian: 15479

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 1700V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.9A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 18V, Rds On (Maks) @ Id, Vgs: 975 mOhm @ 1.7A, 18V,

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Rohm Semiconductor

SCT3060ALGC11

bahagian bahagian: 7128

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 39A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 18V, Rds On (Maks) @ Id, Vgs: 78 mOhm @ 13A, 18V,

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Rohm Semiconductor

SCH2080KEC

bahagian bahagian: 2547

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 18V, Rds On (Maks) @ Id, Vgs: 117 mOhm @ 10A, 18V,

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Rohm Semiconductor

RRH050P03GZETB

bahagian bahagian: 6288

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 5A, 10V,

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Rohm Semiconductor

SCT3040KLGC11

bahagian bahagian: 2854

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 55A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 18V, Rds On (Maks) @ Id, Vgs: 52 mOhm @ 20A, 18V,

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Rohm Semiconductor

RSS090P03FU7TB

bahagian bahagian: 135899

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 14 mOhm @ 9A, 10V,

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Rohm Semiconductor

RP1E090RPTR

bahagian bahagian: 2073

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 16.9 mOhm @ 9A, 10V,

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Rohm Semiconductor

RCD080N25TL

bahagian bahagian: 99109

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 250V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 300 mOhm @ 4A, 10V,

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Rohm Semiconductor

SCT2H12NYTB

bahagian bahagian: 18112

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 1700V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 18V, Rds On (Maks) @ Id, Vgs: 1.5 Ohm @ 1.1A, 18V,

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Rohm Semiconductor

SCT3030ALGC11

bahagian bahagian: 3030

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 70A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 18V, Rds On (Maks) @ Id, Vgs: 39 mOhm @ 27A, 18V,

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Rohm Semiconductor

R6004ENDTL

bahagian bahagian: 156482

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 980 mOhm @ 1.5A, 10V,

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Rohm Semiconductor

RAQ045P01TCR

bahagian bahagian: 1902

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V,

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Rohm Semiconductor

RS1E200GNTB

bahagian bahagian: 196672

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 4.6 mOhm @ 20A, 10V,

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Rohm Semiconductor

RSS065N06FRATB

bahagian bahagian: 10801

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 37 mOhm @ 6.5A, 10V,

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Rohm Semiconductor

RMW130N03TB

bahagian bahagian: 190282

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 12.6 mOhm @ 13A, 10V,

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Rohm Semiconductor

RMW200N03TB

bahagian bahagian: 116058

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 4.2 mOhm @ 20A, 10V,

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Rohm Semiconductor

RP1E090XNTCR

bahagian bahagian: 1429

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 9A, 10V,

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Rohm Semiconductor

RP1E070XNTCR

bahagian bahagian: 1473

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 7A, 10V,

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Rohm Semiconductor

RP1E100XNTR

bahagian bahagian: 6211

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 13 mOhm @ 10A, 10V,

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Rohm Semiconductor

RP1E075RPTR

bahagian bahagian: 1446

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 7.5A, 10V,

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Rohm Semiconductor

RS3E075ATTB

bahagian bahagian: 122522

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 23.5 mOhm @ 7.5A, 10V,

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Rohm Semiconductor

RSH065N03TB1

bahagian bahagian: 197099

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 27 mOhm @ 6.5A, 10V,

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Rohm Semiconductor

RSD220N06TL

bahagian bahagian: 102535

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 22A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V,

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Rohm Semiconductor

RP1L080SNTR

bahagian bahagian: 1473

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 8A, 10V,

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Rohm Semiconductor

RS3E135BNGZETB

bahagian bahagian: 183103

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 14.6 mOhm @ 9.5A, 10V,

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Rohm Semiconductor

RND030N20TL

bahagian bahagian: 172245

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 870 mOhm @ 1.5A, 10V,

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Rohm Semiconductor

R6006ANDTL

bahagian bahagian: 68225

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.2 Ohm @ 3A, 10V,

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Rohm Semiconductor

RP1H065SPTR

bahagian bahagian: 1481

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 45V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 31 mOhm @ 6.5A, 10V,

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Rohm Semiconductor

R6004CNDTL

bahagian bahagian: 76158

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.8 Ohm @ 2A, 10V,

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Rohm Semiconductor

RRH100P03GZETB

bahagian bahagian: 101180

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 12.6 mOhm @ 10A, 10V,

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Rohm Semiconductor

RD3L080SNTL1

bahagian bahagian: 10823

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 8A, 10V,

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Rohm Semiconductor

RS1E280GNTB

bahagian bahagian: 189450

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 28A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 2.6 mOhm @ 28A, 10V,

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Rohm Semiconductor

SCT2160KEC

bahagian bahagian: 7564

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 22A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 18V, Rds On (Maks) @ Id, Vgs: 208 mOhm @ 7A, 18V,

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