Transistor - Bipolar (BJT) - Bujang

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Transistor - Bipolar (BJT) - Bujang

Rohm Semiconductor

2SC4102T106R

bahagian bahagian: 122102

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 500nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V,

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Rohm Semiconductor

2SB1561T100Q

bahagian bahagian: 164630

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 350mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V,

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Rohm Semiconductor

2SB1733TL

bahagian bahagian: 178752

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 350mV @ 25mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V,

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Rohm Semiconductor

2SCR375P5T100R

bahagian bahagian: 131612

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 80mA, 800mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 5V,

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Rohm Semiconductor

2SD1383KT146B

bahagian bahagian: 149824

Jenis Transistor: NPN - Darlington, Semasa - Pemungut (Ic) (Maks): 300mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 32V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 400µA, 200mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 5000 @ 100mA, 5V,

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Rohm Semiconductor

2SC5658T2LR

bahagian bahagian: 141770

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

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2SAR533PFRAT100

Rohm Semiconductor

2SAR533PFRAT100

bahagian bahagian: 58

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 3V,

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Rohm Semiconductor

2SA1576U3T106Q

bahagian bahagian: 103

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

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Rohm Semiconductor

2SC4725TLP

bahagian bahagian: 134728

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 4mA, 20mA, Semasa - Potongan Pemungut (Maksimum): 500nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 82 @ 10mA, 10V,

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Rohm Semiconductor

2SCR346PT100P

bahagian bahagian: 184111

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 400V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 2mA, 20mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 82 @ 10mA, 10V,

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Rohm Semiconductor

2SC5585TL

bahagian bahagian: 148835

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 12V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 200mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V,

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2SCR293PFRAT100

Rohm Semiconductor

2SCR293PFRAT100

bahagian bahagian: 91

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 350mV @ 25mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V,

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Rohm Semiconductor

2SD2114KT146V

bahagian bahagian: 160091

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 20mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 500nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 820 @ 10mA, 3V,

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2SCR514PFRAT100

Rohm Semiconductor

2SCR514PFRAT100

bahagian bahagian: 94

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 700mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 15mA, 300mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V,

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Rohm Semiconductor

2SAR523UBTL

bahagian bahagian: 168051

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

Senarai harapan

Rohm Semiconductor

2SC4081U3T106Q

bahagian bahagian: 124

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

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Rohm Semiconductor

2SD2707T2LV

bahagian bahagian: 111999

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 300nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 820 @ 1mA, 5V,

Senarai harapan

Rohm Semiconductor

2SA1576U3T106R

bahagian bahagian: 50

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

Senarai harapan

Rohm Semiconductor

2SD2351T106W

bahagian bahagian: 170644

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 300nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 820 @ 1mA, 5V,

Senarai harapan

Rohm Semiconductor

2SA1514KT146R

bahagian bahagian: 182444

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 500nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V,

Senarai harapan

Rohm Semiconductor

2SC5824T100R

bahagian bahagian: 125000

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 200mA, 2A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V,

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Rohm Semiconductor

2SCR542PT100

bahagian bahagian: 181991

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 100mA, 2A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V,

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Rohm Semiconductor

2SAR553P5T100

bahagian bahagian: 111299

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 35mA, 700mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V,

Senarai harapan

Rohm Semiconductor

2SC4102T106S

bahagian bahagian: 142960

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 500nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V,

Senarai harapan

Rohm Semiconductor

2SAR293P5T100

bahagian bahagian: 121004

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 350mV @ 25mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V,

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Rohm Semiconductor

2SB1731TL

bahagian bahagian: 178205

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 370mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V,

Senarai harapan

Rohm Semiconductor

2SD2226KT146W

bahagian bahagian: 170942

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 300nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 820 @ 1mA, 5V,

Senarai harapan

Rohm Semiconductor

2SA1579T106S

bahagian bahagian: 174437

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 500nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V,

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Rohm Semiconductor

2SD2702TL

bahagian bahagian: 197914

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 12V, Ketepuan Vce (Maks) @ Ib, Ic: 200mV @ 25mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V,

Senarai harapan

2SAR514PFRAT100

Rohm Semiconductor

2SAR514PFRAT100

bahagian bahagian: 89

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 700mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 15mA, 300mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V,

Senarai harapan

Rohm Semiconductor

2SC4081U3T106S

bahagian bahagian: 50

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

Senarai harapan

Rohm Semiconductor

2SD2656FRAT106

bahagian bahagian: 80

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 350mV @ 25mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V,

Senarai harapan

Rohm Semiconductor

2SC4081U3T106R

bahagian bahagian: 117

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

Senarai harapan

Rohm Semiconductor

2SA2018TL

bahagian bahagian: 128169

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 12V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 200mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V,

Senarai harapan

Rohm Semiconductor

2SCR514P5T100

bahagian bahagian: 182767

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 700mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 15mA, 300mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V,

Senarai harapan

Rohm Semiconductor

2SD2654TLW

bahagian bahagian: 134178

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 300nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 820 @ 1mA, 5V,

Senarai harapan

607

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