Transistor - FET, MOSFET - Susunan | Produk Semikonduktor Diskrit | 5

BSM180D12P3C007

bahagian bahagian: 168

Jenis FET: 2 N-Channel (Dual), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 180A (Tc), Vgs (th) (Maks) @ Id: 5.6V @ 50mA,

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Rohm Semiconductor

BSM300D12P2E001

bahagian bahagian: 201

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 300A (Tc), Vgs (th) (Maks) @ Id: 4V @ 68mA,

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Rohm Semiconductor

BSM080D12P2C008

bahagian bahagian: 263

Jenis FET: 2 N-Channel (Dual), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 80A (Tc), Vgs (th) (Maks) @ Id: 4V @ 13.2mA,

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Rohm Semiconductor

BSM120D12P2C005

bahagian bahagian: 258

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Vgs (th) (Maks) @ Id: 2.7V @ 22mA,

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Rohm Semiconductor

BSM180D12P2C101

bahagian bahagian: 243

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 204A (Tc), Vgs (th) (Maks) @ Id: 4V @ 35.2mA,

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Rohm Semiconductor

VT6J1T2CR

bahagian bahagian: 168368

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, 1.2V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA, Rds On (Maks) @ Id, Vgs: 3.8 Ohm @ 100mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 100µA,

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Rohm Semiconductor

EM6K31T2R

bahagian bahagian: 181152

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 250mA, Rds On (Maks) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V, Vgs (th) (Maks) @ Id: 2.3V @ 1mA,

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Rohm Semiconductor

EM6K31GT2R

bahagian bahagian: 153168

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 2.5V Drive, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 250mA, Rds On (Maks) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V, Vgs (th) (Maks) @ Id: 2.3V @ 1mA,

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Rohm Semiconductor

VT6M1T2CR

bahagian bahagian: 125142

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, 1.2V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA, Rds On (Maks) @ Id, Vgs: 3.5 Ohm @ 100mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 100µA,

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Rohm Semiconductor

EM6J1T2R

bahagian bahagian: 109230

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA, Rds On (Maks) @ Id, Vgs: 1.2 Ohm @ 200mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 100µA,

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Rohm Semiconductor

TT8J13TCR

bahagian bahagian: 181566

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, 1.5V Drive, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A, Rds On (Maks) @ Id, Vgs: 62 mOhm @ 2.5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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Rohm Semiconductor

US6J11TR

bahagian bahagian: 145887

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.3A, Rds On (Maks) @ Id, Vgs: 260 mOhm @ 1.3A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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Rohm Semiconductor

TT8J11TCR

bahagian bahagian: 175857

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, 1.5V Drive, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A, Rds On (Maks) @ Id, Vgs: 43 mOhm @ 3.5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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Rohm Semiconductor

SP8M24FRATB

bahagian bahagian: 109

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 45V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A (Ta), 3.5A (Ta), Rds On (Maks) @ Id, Vgs: 46 mOhm @ 4.5A, 10V, 63 mOhm @ 3.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SP8M51FRATB

bahagian bahagian: 152

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A (Ta), 2.5A (Ta), Rds On (Maks) @ Id, Vgs: 170 mOhm @ 3A, 10V, 290 mOhm @ 2.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

TT8M3TR

bahagian bahagian: 154779

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, 1.5V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A, 2.4A, Rds On (Maks) @ Id, Vgs: 72 mOhm @ 2.5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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Rohm Semiconductor

HP8KA1TB

bahagian bahagian: 113065

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14A, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 14A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 10mA,

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Rohm Semiconductor

SP8K22FRATB

bahagian bahagian: 87

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 45V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A (Ta), Rds On (Maks) @ Id, Vgs: 46 mOhm @ 4.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SP8K33FRATB

bahagian bahagian: 149

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A (Ta), Rds On (Maks) @ Id, Vgs: 48 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

TT8K1TR

bahagian bahagian: 171251

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 1.5V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A, Rds On (Maks) @ Id, Vgs: 72 mOhm @ 2.5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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Rohm Semiconductor

TT8K11TCR

bahagian bahagian: 195555

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 4V Drive, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, Rds On (Maks) @ Id, Vgs: 71 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1A,

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Rohm Semiconductor

SP8K52FRATB

bahagian bahagian: 115

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A (Ta), Rds On (Maks) @ Id, Vgs: 170 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

TT8J3TR

bahagian bahagian: 193760

Jenis FET: 2 P-Channel (Dual), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A, Rds On (Maks) @ Id, Vgs: 84 mOhm @ 2.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SP8K32FRATB

bahagian bahagian: 80

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A (Ta), Rds On (Maks) @ Id, Vgs: 65 mOhm @ 4.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

HP8S36TB

bahagian bahagian: 130641

Jenis FET: 2 N-Channel (Half Bridge), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 27A, 80A, Rds On (Maks) @ Id, Vgs: 2.4 mOhm @ 32A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

US6K1TR

bahagian bahagian: 126806

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.5A, Rds On (Maks) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 1mA,

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Rohm Semiconductor

US6M2GTR

bahagian bahagian: 127

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.5A, 1A, Rds On (Maks) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V, 390 mOhm @ 1A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 1mA, 2V @ 1mA,

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Rohm Semiconductor

HS8K11TB

bahagian bahagian: 188805

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, 11A, Rds On (Maks) @ Id, Vgs: 17.9 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

TT8K2TR

bahagian bahagian: 164928

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 2.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 1mA,

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Rohm Semiconductor

TT8M2TR

bahagian bahagian: 126279

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 2.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 1mA,

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Rohm Semiconductor

SP8M5FRATB

bahagian bahagian: 154

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Ta), 7A (Ta), Rds On (Maks) @ Id, Vgs: 30 mOhm @ 6A, 10V, 28 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SP8M6FRATB

bahagian bahagian: 153

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A (Ta), 3.5A (Ta), Rds On (Maks) @ Id, Vgs: 51 mOhm @ 5A, 10V, 90 mOhm @ 3.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SP8M21FRATB

bahagian bahagian: 70

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 45V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Ta), 4A (Ta), Rds On (Maks) @ Id, Vgs: 25 mOhm @ 6A, 10V, 46 mOhm @ 4A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SP8K24FRATB

bahagian bahagian: 123

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 45V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Ta), Rds On (Maks) @ Id, Vgs: 25 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

TT8J2TR

bahagian bahagian: 170382

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A, Rds On (Maks) @ Id, Vgs: 84 mOhm @ 2.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

US6K2TR

bahagian bahagian: 124293

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.4A, Rds On (Maks) @ Id, Vgs: 240 mOhm @ 1.4A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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