Transistor - Bipolar (BJT) - Susunan | Produk Semikonduktor Diskrit | 3

UMX4NTR

bahagian bahagian: 184327

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 4mA, 20mA, Semasa - Potongan Pemungut (Maksimum): 500nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 10V,

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Rohm Semiconductor

EMZ7T2R

bahagian bahagian: 167602

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 12V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 200mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V,

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Rohm Semiconductor

IMT1AT110

bahagian bahagian: 183335

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

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Rohm Semiconductor

FMY5T148

bahagian bahagian: 168226

Jenis Transistor: NPN, PNP (Emitter Coupled), Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 500nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V,

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Rohm Semiconductor

IMX8T108

bahagian bahagian: 127197

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 500nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V,

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Rohm Semiconductor

IMX17T110

bahagian bahagian: 6501

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V,

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Rohm Semiconductor

EMT51T2R

bahagian bahagian: 167143

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

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Rohm Semiconductor

VT6Z1T2R

bahagian bahagian: 197894

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V,

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Rohm Semiconductor

VT6Z2T2R

bahagian bahagian: 111680

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

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Rohm Semiconductor

UMT1NTN

bahagian bahagian: 122570

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

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Rohm Semiconductor

IMT17T208

bahagian bahagian: 4427

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V,

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Rohm Semiconductor

EMT2T2R

bahagian bahagian: 154657

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

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Rohm Semiconductor

UMX2NTR

bahagian bahagian: 153636

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

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Rohm Semiconductor

FMY1AT148

bahagian bahagian: 185011

Jenis Transistor: NPN, PNP (Emitter Coupled), Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

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Rohm Semiconductor

EMZ51T2R

bahagian bahagian: 190963

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

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Rohm Semiconductor

MP6Z13TR

bahagian bahagian: 4465

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 350mV @ 50mA, 1A / 400mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V,

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Rohm Semiconductor

QSZ3TR

bahagian bahagian: 4437

Jenis Transistor: NPN, PNP (Emitter Coupled), Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 12V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 30mA, 1.5A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V,

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Rohm Semiconductor

EMT3T2R

bahagian bahagian: 146529

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

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Rohm Semiconductor

EMX3T2R

bahagian bahagian: 118568

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

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Rohm Semiconductor

QSZ4TR

bahagian bahagian: 122850

Jenis Transistor: NPN, PNP (Emitter Coupled), Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 370mV @ 75mA, 1.5A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V,

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Rohm Semiconductor

QS5Y1TR

bahagian bahagian: 100753

Jenis Transistor: NPN, PNP (Emitter Coupled), Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V,

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Rohm Semiconductor

QSX7TR

bahagian bahagian: 133111

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 1.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 12V, Ketepuan Vce (Maks) @ Ib, Ic: 200mV @ 25mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V,

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Rohm Semiconductor

FMW1T148

bahagian bahagian: 193173

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

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Rohm Semiconductor

FMY4AT148

bahagian bahagian: 115359

Jenis Transistor: NPN, PNP Complementary Darlington, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

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Rohm Semiconductor

EMX5T2R

bahagian bahagian: 132191

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 11V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 5mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 500nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V,

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Rohm Semiconductor

US6T9TR

bahagian bahagian: 144882

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 350mV @ 25mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V,

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Rohm Semiconductor

QSX8TR

bahagian bahagian: 124260

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 350mV @ 25mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V,

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Rohm Semiconductor

IMX5T108

bahagian bahagian: 149748

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 11V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 5mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 500nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V,

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Rohm Semiconductor

QS6Z5TR

bahagian bahagian: 158820

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 350mV @ 25mA, 500mA / 400mV @ 25mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V,

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Rohm Semiconductor

QS5W2TR

bahagian bahagian: 188842

Jenis Transistor: 2 NPN (Dual) Common Emitter, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 350mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V,

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Rohm Semiconductor

IMX17T108

bahagian bahagian: 170021

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V,

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Rohm Semiconductor

IMX3T108

bahagian bahagian: 188015

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

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Rohm Semiconductor

IMZ2AT108

bahagian bahagian: 189718

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

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Rohm Semiconductor

IMX1T108

bahagian bahagian: 134514

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

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Rohm Semiconductor

QSZ2TR

bahagian bahagian: 151664

Jenis Transistor: NPN, PNP (Emitter Coupled), Semasa - Pemungut (Ic) (Maks): 1.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 350mV @ 50mA, 1A / 370mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V,

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Rohm Semiconductor

IMZ4T108

bahagian bahagian: 137089

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 32V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 50mA, 500mA / 600mV @ 30mA, 300mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V,

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