Diod - Zener - Bujang | Produk Semikonduktor Diskrit | 21

CDZVT2R5.1B

bahagian bahagian: 123954

Voltan - Zener (Nom) (Vz): 5.1V, Kuasa - Maks: 100mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 1.5V,

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Rohm Semiconductor

CDZFHT2RA4.7B

bahagian bahagian: 133

Voltan - Zener (Nom) (Vz): 4.65V, Toleransi: ±2.15%, Kuasa - Maks: 100mW, Impedans (Maks) (Zzt): 100 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 1V,

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Rohm Semiconductor

VDZT2R18B

bahagian bahagian: 125813

Voltan - Zener (Nom) (Vz): 18V, Toleransi: ±2%, Kuasa - Maks: 100mW, Impedans (Maks) (Zzt): 65 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 13V,

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Rohm Semiconductor

YFZVFHTR15B

bahagian bahagian: 150

Voltan - Zener (Nom) (Vz): 14.26V, Toleransi: ±2.56%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 16 Ohms, Semasa - Kebocoran Terbalik @ Vr: 200nA @ 11V,

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Rohm Semiconductor

YFZVFHTR6.2B

bahagian bahagian: 121

Voltan - Zener (Nom) (Vz): 6.12V, Toleransi: ±2.53%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 3V,

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Rohm Semiconductor

VDZT2R13B

bahagian bahagian: 189000

Voltan - Zener (Nom) (Vz): 13V, Toleransi: ±2%, Kuasa - Maks: 100mW, Impedans (Maks) (Zzt): 37 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 10V,

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Rohm Semiconductor

VDZT2R22B

bahagian bahagian: 181145

Voltan - Zener (Nom) (Vz): 22V, Toleransi: ±2%, Kuasa - Maks: 100mW, Impedans (Maks) (Zzt): 100 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 17V,

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Rohm Semiconductor

CDZVT2R2.2B

bahagian bahagian: 115520

Voltan - Zener (Nom) (Vz): 2.2V, Kuasa - Maks: 100mW, Impedans (Maks) (Zzt): 100 Ohms, Semasa - Kebocoran Terbalik @ Vr: 120µA @ 700mV,

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Rohm Semiconductor

TDZVTR5.6

bahagian bahagian: 148

Voltan - Zener (Nom) (Vz): 5.6V, Toleransi: ±8.93%, Kuasa - Maks: 500mW, Semasa - Kebocoran Terbalik @ Vr: 10µA @ 2.5V,

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Rohm Semiconductor

CDZVT2R18B

bahagian bahagian: 127474

Voltan - Zener (Nom) (Vz): 18V, Kuasa - Maks: 100mW, Impedans (Maks) (Zzt): 65 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 13V,

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Rohm Semiconductor

YFZVFHTR11B

bahagian bahagian: 113

Voltan - Zener (Nom) (Vz): 10.78V, Toleransi: ±2.55%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 200nA @ 8V,

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Rohm Semiconductor

UDZUFHTE-175.6B

bahagian bahagian: 93

Voltan - Zener (Nom) (Vz): 5.61V, Toleransi: ±2.14%, Kuasa - Maks: 200mW, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 2.5V,

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Rohm Semiconductor

CDZFHT2RA36B

bahagian bahagian: 21637

Voltan - Zener (Nom) (Vz): 36.97V, Toleransi: ±2.5%, Kuasa - Maks: 100mW, Impedans (Maks) (Zzt): 300 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 27V,

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Rohm Semiconductor

TDZVTR6.2

bahagian bahagian: 148

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±9.68%, Kuasa - Maks: 500mW, Semasa - Kebocoran Terbalik @ Vr: 10µA @ 3V,

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Rohm Semiconductor

TFZVTR4.3B

bahagian bahagian: 104599

Voltan - Zener (Nom) (Vz): 4.3V, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 1V,

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Rohm Semiconductor

CDZVT2R3.9B

bahagian bahagian: 135893

Voltan - Zener (Nom) (Vz): 3.9V, Kuasa - Maks: 100mW, Impedans (Maks) (Zzt): 100 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 1V,

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Rohm Semiconductor

CDZFHT2RA9.1B

bahagian bahagian: 135

Voltan - Zener (Nom) (Vz): 9.04V, Toleransi: ±2.1%, Kuasa - Maks: 100mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 6V,

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Rohm Semiconductor

YFZVFHTR18B

bahagian bahagian: 162

Voltan - Zener (Nom) (Vz): 17.26V, Toleransi: ±2.55%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 23 Ohms, Semasa - Kebocoran Terbalik @ Vr: 200nA @ 13V,

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Rohm Semiconductor

TDZVTR11

bahagian bahagian: 110

Voltan - Zener (Nom) (Vz): 11V, Toleransi: ±10%, Kuasa - Maks: 500mW, Semasa - Kebocoran Terbalik @ Vr: 10µA @ 7V,

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Rohm Semiconductor

VDZT2R5.6B

bahagian bahagian: 168313

Voltan - Zener (Nom) (Vz): 5.6V, Toleransi: ±2%, Kuasa - Maks: 100mW, Impedans (Maks) (Zzt): 60 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 2.5V,

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Rohm Semiconductor

CDZVT2R12B

bahagian bahagian: 173107

Voltan - Zener (Nom) (Vz): 12V, Kuasa - Maks: 100mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 9V,

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Rohm Semiconductor

TDZVTR5.1

bahagian bahagian: 136

Voltan - Zener (Nom) (Vz): 5.1V, Toleransi: ±9.8%, Kuasa - Maks: 500mW, Semasa - Kebocoran Terbalik @ Vr: 10µA @ 1.5V,

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Rohm Semiconductor

CDZFHT2RA10B

bahagian bahagian: 116

Voltan - Zener (Nom) (Vz): 9.99V, Toleransi: ±2.2%, Kuasa - Maks: 100mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 7V,

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Rohm Semiconductor

VDZT2R16B

bahagian bahagian: 117467

Voltan - Zener (Nom) (Vz): 16V, Toleransi: ±2%, Kuasa - Maks: 100mW, Impedans (Maks) (Zzt): 50 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 12V,

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Rohm Semiconductor

CDZFHT2RA6.8B

bahagian bahagian: 102

Voltan - Zener (Nom) (Vz): 6.79V, Toleransi: ±2.06%, Kuasa - Maks: 100mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 3.5V,

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Rohm Semiconductor

CDZFHT2RA3.9B

bahagian bahagian: 167

Voltan - Zener (Nom) (Vz): 4.03V, Toleransi: ±3.35%, Kuasa - Maks: 100mW, Impedans (Maks) (Zzt): 100 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 1V,

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Rohm Semiconductor

TDZVTR6.8

bahagian bahagian: 119

Voltan - Zener (Nom) (Vz): 6.8V, Toleransi: ±8.82%, Kuasa - Maks: 500mW, Semasa - Kebocoran Terbalik @ Vr: 10µA @ 3.5V,

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Rohm Semiconductor

VDZT2R6.2B

bahagian bahagian: 139436

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±2%, Kuasa - Maks: 100mW, Impedans (Maks) (Zzt): 60 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 3V,

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Rohm Semiconductor

TFZVTR11B

bahagian bahagian: 192938

Voltan - Zener (Nom) (Vz): 11V, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 200nA @ 8V,

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Rohm Semiconductor

YFZVFHTR2.7B

bahagian bahagian: 9934

Voltan - Zener (Nom) (Vz): 2.8V, Toleransi: ±3.93%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 100 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100µA @ 1V,

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Rohm Semiconductor

YFZVFHTR6.8B

bahagian bahagian: 129

Voltan - Zener (Nom) (Vz): 6.66V, Toleransi: ±2.55%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 8 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 3.5V,

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Rohm Semiconductor

CDZFHT2RA27B

bahagian bahagian: 139

Voltan - Zener (Nom) (Vz): 26.86V, Toleransi: ±2.49%, Kuasa - Maks: 100mW, Impedans (Maks) (Zzt): 150 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 21V,

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Rohm Semiconductor

YFZVFHTR5.6B

bahagian bahagian: 132

Voltan - Zener (Nom) (Vz): 5.59V, Toleransi: ±2.5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 13 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 2.5V,

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Rohm Semiconductor

TDZVTR7.5

bahagian bahagian: 115

Voltan - Zener (Nom) (Vz): 7.55V, Toleransi: ±10%, Kuasa - Maks: 500mW, Semasa - Kebocoran Terbalik @ Vr: 10µA @ 4.5V,

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Rohm Semiconductor

CDZFHT2RA15B

bahagian bahagian: 105

Voltan - Zener (Nom) (Vz): 14.66V, Toleransi: ±2.18%, Kuasa - Maks: 100mW, Impedans (Maks) (Zzt): 42 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 11V,

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Rohm Semiconductor

YFZVFHTR10B

bahagian bahagian: 159

Voltan - Zener (Nom) (Vz): 9.66V, Toleransi: ±2.54%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 8 Ohms, Semasa - Kebocoran Terbalik @ Vr: 200nA @ 7V,

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