Transistor - Bipolar (BJT) - Bujang

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Transistor - Bipolar (BJT) - Bujang

Rohm Semiconductor

2SAR542PT100

bahagian bahagian: 118499

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 35mA, 700mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V,

Senarai harapan

Rohm Semiconductor

2SCR574D3TL1

bahagian bahagian: 75

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V,

Senarai harapan

Rohm Semiconductor

2SCR572D3TL1

bahagian bahagian: 101

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 100mA, 2A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 3V,

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Rohm Semiconductor

2SCR573D3TL1

bahagian bahagian: 98

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 350mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V,

Senarai harapan

Rohm Semiconductor

2SCR586D3TL1

bahagian bahagian: 96

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 100mA, 2A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V,

Senarai harapan

Rohm Semiconductor

2SAR586D3TL1

bahagian bahagian: 130

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 320mV @ 100mA, 2A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V,

Senarai harapan

Rohm Semiconductor

2SAR572D3TL1

bahagian bahagian: 154

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 100mA, 2A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 3V,

Senarai harapan

Rohm Semiconductor

2SAR574D3TL1

bahagian bahagian: 88

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V,

Senarai harapan

Rohm Semiconductor

2SAR542F3TR

bahagian bahagian: 191966

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 200mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V,

Senarai harapan

Rohm Semiconductor

2SAR553RTL

bahagian bahagian: 170732

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 35mA, 700mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V,

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Rohm Semiconductor

2SD2672TL

bahagian bahagian: 168124

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 4A, Voltan - Pemecahan Pemancar Pemungut (Maks): 12V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 40mA, 2A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V,

Senarai harapan

Rohm Semiconductor

2SD2657TL

bahagian bahagian: 158423

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 350mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V,

Senarai harapan

Rohm Semiconductor

2SAR514RTL

bahagian bahagian: 156809

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 700mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 15mA, 300mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V,

Senarai harapan

Rohm Semiconductor

2SB1710TL

bahagian bahagian: 173205

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 350mV @ 25mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V,

Senarai harapan

Rohm Semiconductor

2SD2674TL

bahagian bahagian: 154446

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 12V, Ketepuan Vce (Maks) @ Ib, Ic: 200mV @ 25mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V,

Senarai harapan

Rohm Semiconductor

2SCR544RTL

bahagian bahagian: 150595

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V,

Senarai harapan

Rohm Semiconductor

2SCR512RTL

bahagian bahagian: 195863

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 35mA, 700mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V,

Senarai harapan

Rohm Semiconductor

2SAR572DGTL

bahagian bahagian: 179046

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 100mA, 2A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 3V,

Senarai harapan

Rohm Semiconductor

2SB1698T100

bahagian bahagian: 145330

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 370mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V,

Senarai harapan

Rohm Semiconductor

2SAR533P5T100

bahagian bahagian: 160602

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V,

Senarai harapan

Rohm Semiconductor

2SAR554P5T100

bahagian bahagian: 160723

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 25mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V,

Senarai harapan

2SAR554PFRAT100

Rohm Semiconductor

2SAR554PFRAT100

bahagian bahagian: 4362

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 25mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V,

Senarai harapan

2SAR553PFRAT100

Rohm Semiconductor

2SAR553PFRAT100

bahagian bahagian: 4342

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 35mA, 700mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V,

Senarai harapan

2SCR542PFRAT100

Rohm Semiconductor

2SCR542PFRAT100

bahagian bahagian: 4394

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 100mA, 2A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V,

Senarai harapan

Rohm Semiconductor

2SD1767T100R

bahagian bahagian: 191284

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 700mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 500nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V,

Senarai harapan

Rohm Semiconductor

2SCR372P5T100Q

bahagian bahagian: 136623

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 700mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V,

Senarai harapan

Rohm Semiconductor

2SD2153T100V

bahagian bahagian: 190464

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 25V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 20mA, 1A, Semasa - Potongan Pemungut (Maksimum): 500nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 820 @ 500mA, 6V,

Senarai harapan

Rohm Semiconductor

2SCR553PT100

bahagian bahagian: 117236

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 350mV @ 35mA, 700mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V,

Senarai harapan

2SCR513PFRAT100

Rohm Semiconductor

2SCR513PFRAT100

bahagian bahagian: 4337

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 350mV @ 25mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V,

Senarai harapan

Rohm Semiconductor

2SA1797T100Q

bahagian bahagian: 116303

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 350mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V,

Senarai harapan

Rohm Semiconductor

2SB1260T100R

bahagian bahagian: 114881

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V,

Senarai harapan

Rohm Semiconductor

2SAR544P5T100

bahagian bahagian: 178977

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V,

Senarai harapan

Rohm Semiconductor

2SD2391T100Q

bahagian bahagian: 114204

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 350mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V,

Senarai harapan

Rohm Semiconductor

2SAR512P5T100

bahagian bahagian: 138187

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 35mA, 700mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V,

Senarai harapan

2SAR512PFRAT100

Rohm Semiconductor

2SAR512PFRAT100

bahagian bahagian: 4346

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 35mA, 700mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V,

Senarai harapan

Rohm Semiconductor

2SD2662T100

bahagian bahagian: 117505

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 350mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V,

Senarai harapan

607

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