Diod - Pembetulan - Bujang | Produk Semikonduktor Diskrit | 100

SFAF805GHC0G

bahagian bahagian: 149

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 300V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

SFAF1001GHC0G

bahagian bahagian: 76

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 975mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

SFS1603GHMNG

bahagian bahagian: 170

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 16A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 975mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

SR809HA0G

bahagian bahagian: 100

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 90V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SRAF1060HC0G

bahagian bahagian: 146

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SF13GHB0G

bahagian bahagian: 127

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

SF67GHA0G

bahagian bahagian: 164

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 500V, Semasa - Rata-rata Disahkan (Io): 6A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 6A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

SFAS802GHMNG

bahagian bahagian: 158

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

SF13GHR0G

bahagian bahagian: 71

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

UF1J R0G

bahagian bahagian: 164

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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Taiwan Semiconductor Corporation

MBR16150HC0G

bahagian bahagian: 123

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 16A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 16A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SR306HR0G

bahagian bahagian: 78

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

HER303G A0G

bahagian bahagian: 164

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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Taiwan Semiconductor Corporation

SR1204 R0G

bahagian bahagian: 116

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 12A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 12A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SF11GHR0G

bahagian bahagian: 94

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

SR304HR0G

bahagian bahagian: 147

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SR304 R0G

bahagian bahagian: 98

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

MBRF1060 C0G

bahagian bahagian: 131

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 800mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

UF4006HR1G

bahagian bahagian: 117

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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Taiwan Semiconductor Corporation

SF2007G C0G

bahagian bahagian: 160

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 500V, Semasa - Rata-rata Disahkan (Io): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

SRA2090HC0G

bahagian bahagian: 85

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 90V, Semasa - Rata-rata Disahkan (Io): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SR806HR0G

bahagian bahagian: 148

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SR003HB0G

bahagian bahagian: 135

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 500mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 500mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SFF2008GHC0G

bahagian bahagian: 118

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

MBR750HC0G

bahagian bahagian: 81

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 7.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 7.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

UF4003HR0G

bahagian bahagian: 74

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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Taiwan Semiconductor Corporation

SR106HR0G

bahagian bahagian: 153

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SR1202HR0G

bahagian bahagian: 82

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 12A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 12A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SFAS803GHMNG

bahagian bahagian: 155

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

SR010HA0G

bahagian bahagian: 174

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 500mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 850mV @ 500mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SFS1602G MNG

bahagian bahagian: 106

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 16A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 975mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

SF44G B0G

bahagian bahagian: 117

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 4A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

GPA807HC0G

bahagian bahagian: 173

Jenis Diod: Standard, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 8A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SRAS2020HMNG

bahagian bahagian: 152

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 570mV @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SR104HR0G

bahagian bahagian: 106

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SF3008PTHC0G

bahagian bahagian: 86

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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