Diod - Pembetulan - Bujang | Produk Semikonduktor Diskrit | 100

MBRF2090HC0G

bahagian bahagian: 86

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 90V, Semasa - Rata-rata Disahkan (Io): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

GPA803HC0G

bahagian bahagian: 163

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 8A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SF2002G C0G

bahagian bahagian: 138

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 975mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

HERAF1603G C0G

bahagian bahagian: 115

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 16A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 16A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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Taiwan Semiconductor Corporation

SR502 B0G

bahagian bahagian: 150

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SR1020 C0G

bahagian bahagian: 130

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

F1T2G A0G

bahagian bahagian: 152

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

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Taiwan Semiconductor Corporation

SFA1007GHC0G

bahagian bahagian: 125

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 500V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

SF1002GHC0G

bahagian bahagian: 74

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 975mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

UF4005 R0G

bahagian bahagian: 101

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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Taiwan Semiconductor Corporation

SR515HR0G

bahagian bahagian: 128

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.05V @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

FR102G R1G

bahagian bahagian: 83

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

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Taiwan Semiconductor Corporation

MBR1090 C0G

bahagian bahagian: 151

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 90V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 850mV @ 10A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SRAF820 C0G

bahagian bahagian: 163

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SR104 B0G

bahagian bahagian: 175

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SRA1690 C0G

bahagian bahagian: 106

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 90V, Semasa - Rata-rata Disahkan (Io): 16A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 16A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

UG2JA M2G

bahagian bahagian: 163

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 55ns,

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Taiwan Semiconductor Corporation

UF4004HA0G

bahagian bahagian: 111

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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Taiwan Semiconductor Corporation

SR504HR0G

bahagian bahagian: 137

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SF1002G C0G

bahagian bahagian: 110

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 975mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

SF15GHB0G

bahagian bahagian: 137

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 300V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

SR802 R0G

bahagian bahagian: 116

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SR010 B0G

bahagian bahagian: 135

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 500mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 850mV @ 500mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

UF4006 R0G

bahagian bahagian: 95

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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Taiwan Semiconductor Corporation

HT13G A1G

bahagian bahagian: 108

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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Taiwan Semiconductor Corporation

SF1004GHC0G

bahagian bahagian: 134

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 975mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

SR105 R0G

bahagian bahagian: 115

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SFAF805G C0G

bahagian bahagian: 97

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 300V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

SF1601PTHC0G

bahagian bahagian: 158

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 16A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

SF1603GHC0G

bahagian bahagian: 146

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 16A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 975mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

FR151G B0G

bahagian bahagian: 142

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

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Taiwan Semiconductor Corporation

SF17GHR0G

bahagian bahagian: 103

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 500V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

FR107G R0G

bahagian bahagian: 122

Jenis Diod: Standard, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 500ns,

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Taiwan Semiconductor Corporation

SF2008G C0G

bahagian bahagian: 146

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

SF2003PTHC0G

bahagian bahagian: 108

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

SRA860 C0G

bahagian bahagian: 102

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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