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Diod - Pembetulan - Bujang

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  • Diod - Pembetulan - Bujang
SFAS805G MNG
Taiwan Semiconductor Corporation

SFAS805G MNG

bahagian bahagian: 134

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 300V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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SF2005GHC0G
Taiwan Semiconductor Corporation

SF2005GHC0G

bahagian bahagian: 87

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 300V, Semasa - Rata-rata Disahkan (Io): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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SFS1603G MNG
Taiwan Semiconductor Corporation

SFS1603G MNG

bahagian bahagian: 159

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 16A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 975mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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SRAF860 C0G
Taiwan Semiconductor Corporation

SRAF860 C0G

bahagian bahagian: 160

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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SF66GHB0G
Taiwan Semiconductor Corporation

SF66GHB0G

bahagian bahagian: 91

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 6A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 6A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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SR105 R1G
Taiwan Semiconductor Corporation

SR105 R1G

bahagian bahagian: 137

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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SRAF8150HC0G
Taiwan Semiconductor Corporation

SRAF8150HC0G

bahagian bahagian: 105

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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S1MFSHMXG
Taiwan Semiconductor Corporation

S1MFSHMXG

bahagian bahagian: 127

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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SR102HA0G
Taiwan Semiconductor Corporation

SR102HA0G

bahagian bahagian: 134

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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ES1DV R3G
Taiwan Semiconductor Corporation

ES1DV R3G

bahagian bahagian: 156

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 15ns,

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UF1A A0G
Taiwan Semiconductor Corporation

UF1A A0G

bahagian bahagian: 85

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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UF4005 R1G
Taiwan Semiconductor Corporation

UF4005 R1G

bahagian bahagian: 160

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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SF15GHR0G
Taiwan Semiconductor Corporation

SF15GHR0G

bahagian bahagian: 148

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 300V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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SF1005GHC0G
Taiwan Semiconductor Corporation

SF1005GHC0G

bahagian bahagian: 96

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 300V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

Senarai harapan
SRAF550HC0G
Taiwan Semiconductor Corporation

SRAF550HC0G

bahagian bahagian: 176

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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F1T1GHA0G
Taiwan Semiconductor Corporation

F1T1GHA0G

bahagian bahagian: 144

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

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MBRF16H45 C0G
Taiwan Semiconductor Corporation

MBRF16H45 C0G

bahagian bahagian: 118

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 16A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 630mV @ 16A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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SFT15GHA0G
Taiwan Semiconductor Corporation

SFT15GHA0G

bahagian bahagian: 149

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 300V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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SFS1604GHMNG
Taiwan Semiconductor Corporation

SFS1604GHMNG

bahagian bahagian: 110

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 16A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 975mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

Senarai harapan
ES1DVHR3G
Taiwan Semiconductor Corporation

ES1DVHR3G

bahagian bahagian: 71

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 15ns,

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SR810HR0G
Taiwan Semiconductor Corporation

SR810HR0G

bahagian bahagian: 72

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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SR109HR0G
Taiwan Semiconductor Corporation

SR109HR0G

bahagian bahagian: 134

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 90V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 850mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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FR106G R0G
Taiwan Semiconductor Corporation

FR106G R0G

bahagian bahagian: 127

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 500ns,

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SRA10100 C0G
Taiwan Semiconductor Corporation

SRA10100 C0G

bahagian bahagian: 75

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 850mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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UF4003 R0G
Taiwan Semiconductor Corporation

UF4003 R0G

bahagian bahagian: 150

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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SR505 R0G
Taiwan Semiconductor Corporation

SR505 R0G

bahagian bahagian: 81

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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SK12H45 R0G
Taiwan Semiconductor Corporation

SK12H45 R0G

bahagian bahagian: 90

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 12A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 12A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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SFS1002G MNG
Taiwan Semiconductor Corporation

SFS1002G MNG

bahagian bahagian: 129

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 975mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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SFAF2004GHC0G
Taiwan Semiconductor Corporation

SFAF2004GHC0G

bahagian bahagian: 65

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 975mV @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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SR809 R0G
Taiwan Semiconductor Corporation

SR809 R0G

bahagian bahagian: 162

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 90V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan
SR105HR0G
Taiwan Semiconductor Corporation

SR105HR0G

bahagian bahagian: 149

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan
UF4005HR0G
Taiwan Semiconductor Corporation

UF4005HR0G

bahagian bahagian: 155

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

Senarai harapan
SR520 B0G
Taiwan Semiconductor Corporation

SR520 B0G

bahagian bahagian: 167

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.05V @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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SF17G R0G
Taiwan Semiconductor Corporation

SF17G R0G

bahagian bahagian: 79

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 500V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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S1JFS MXG
Taiwan Semiconductor Corporation

S1JFS MXG

bahagian bahagian: 145

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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SF31GHB0G
Taiwan Semiconductor Corporation

SF31GHB0G

bahagian bahagian: 82

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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