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Transistor - Bipolar (BJT) - Bujang

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  • Transistor - Bipolar (BJT) - Bujang
BC817-16W RFG
Taiwan Semiconductor Corporation

BC817-16W RFG

bahagian bahagian: 264

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V,

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BC546C B1G
Taiwan Semiconductor Corporation

BC546C B1G

bahagian bahagian: 210

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 65V, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V,

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BC338-40 A1G
Taiwan Semiconductor Corporation

BC338-40 A1G

bahagian bahagian: 218

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 25V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO),

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BC817-16 RFG
Taiwan Semiconductor Corporation

BC817-16 RFG

bahagian bahagian: 171

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V,

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BC847C RFG
Taiwan Semiconductor Corporation

BC847C RFG

bahagian bahagian: 230

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V,

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BC807-16 RFG
Taiwan Semiconductor Corporation

BC807-16 RFG

bahagian bahagian: 256

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 200nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V,

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BC849BW RFG
Taiwan Semiconductor Corporation

BC849BW RFG

bahagian bahagian: 183

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

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BC817-25W RFG
Taiwan Semiconductor Corporation

BC817-25W RFG

bahagian bahagian: 259

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V,

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BC848CW RFG
Taiwan Semiconductor Corporation

BC848CW RFG

bahagian bahagian: 243

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V,

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BC337-16 A1G
Taiwan Semiconductor Corporation

BC337-16 A1G

bahagian bahagian: 192

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

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BC548C B1G
Taiwan Semiconductor Corporation

BC548C B1G

bahagian bahagian: 263

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V,

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BC849CW RFG
Taiwan Semiconductor Corporation

BC849CW RFG

bahagian bahagian: 197

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V,

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BC817-40 RFG
Taiwan Semiconductor Corporation

BC817-40 RFG

bahagian bahagian: 233

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V,

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BC550B B1G
Taiwan Semiconductor Corporation

BC550B B1G

bahagian bahagian: 174

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

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BC817-25 RFG
Taiwan Semiconductor Corporation

BC817-25 RFG

bahagian bahagian: 254

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V,

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BC549B B1G
Taiwan Semiconductor Corporation

BC549B B1G

bahagian bahagian: 215

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

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BC550C B1G
Taiwan Semiconductor Corporation

BC550C B1G

bahagian bahagian: 256

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V,

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BC856B RFG
Taiwan Semiconductor Corporation

BC856B RFG

bahagian bahagian: 263

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 65V, Ketepuan Vce (Maks) @ Ib, Ic: 650mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V,

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BC547A A1G
Taiwan Semiconductor Corporation

BC547A A1G

bahagian bahagian: 201

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V,

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BC807-16W RFG
Taiwan Semiconductor Corporation

BC807-16W RFG

bahagian bahagian: 206

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V,

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BC338-25 A1G
Taiwan Semiconductor Corporation

BC338-25 A1G

bahagian bahagian: 190

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 25V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 5V,

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BC807-40 RFG
Taiwan Semiconductor Corporation

BC807-40 RFG

bahagian bahagian: 215

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 200nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V,

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BC546B A1G
Taiwan Semiconductor Corporation

BC546B A1G

bahagian bahagian: 229

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 65V, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

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BC550C A1G
Taiwan Semiconductor Corporation

BC550C A1G

bahagian bahagian: 202

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V,

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BC807-40W RFG
Taiwan Semiconductor Corporation

BC807-40W RFG

bahagian bahagian: 256

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V,

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BC856A RFG
Taiwan Semiconductor Corporation

BC856A RFG

bahagian bahagian: 223

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 65V, Ketepuan Vce (Maks) @ Ib, Ic: 650mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V,

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BC337-25 B1G
Taiwan Semiconductor Corporation

BC337-25 B1G

bahagian bahagian: 228

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 5V,

Senarai harapan
BC547C B1G
Taiwan Semiconductor Corporation

BC547C B1G

bahagian bahagian: 255

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V,

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BC546A A1G
Taiwan Semiconductor Corporation

BC546A A1G

bahagian bahagian: 200

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 65V, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V,

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BC549C B1G
Taiwan Semiconductor Corporation

BC549C B1G

bahagian bahagian: 254

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V,

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BC338-40 B1G
Taiwan Semiconductor Corporation

BC338-40 B1G

bahagian bahagian: 202

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 25V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V,

Senarai harapan
BC847A RFG
Taiwan Semiconductor Corporation

BC847A RFG

bahagian bahagian: 244

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V,

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BC846CW RFG
Taiwan Semiconductor Corporation

BC846CW RFG

bahagian bahagian: 219

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 65V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V,

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BC337-40 B1G
Taiwan Semiconductor Corporation

BC337-40 B1G

bahagian bahagian: 262

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V,

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BC848B RFG
Taiwan Semiconductor Corporation

BC848B RFG

bahagian bahagian: 254

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

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BC548B A1G
Taiwan Semiconductor Corporation

BC548B A1G

bahagian bahagian: 242

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

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