Transistor - Bipolar (BJT) - Bujang

Rumah
Transistor - Bipolar (BJT) - Bujang

Taiwan Semiconductor Corporation

KTC3198-GR A1G

bahagian bahagian: 265

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V,

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Taiwan Semiconductor Corporation

TSB772CK B0G

bahagian bahagian: 236

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 200mA, 2A, Semasa - Potongan Pemungut (Maksimum): 1µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V,

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Taiwan Semiconductor Corporation

TSC5302DCP ROG

bahagian bahagian: 288

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 400V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 250mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 10 @ 400mA, 5V,

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Taiwan Semiconductor Corporation

TS13002ACT A3G

bahagian bahagian: 265

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 300mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 400V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 20mA, 200mA, Semasa - Potongan Pemungut (Maksimum): 1µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 10V,

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Taiwan Semiconductor Corporation

TSC5303DCP ROG

bahagian bahagian: 260

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 400V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 100mA, 400mA, Semasa - Potongan Pemungut (Maksimum): 10µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V,

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Taiwan Semiconductor Corporation

TSA1036CX RFG

bahagian bahagian: 261

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 15mA, 150mA, Semasa - Potongan Pemungut (Maksimum): 10nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

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TSC5304EDCP ROG

Taiwan Semiconductor Corporation

TSC5304EDCP ROG

bahagian bahagian: 345

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 4A, Voltan - Pemecahan Pemancar Pemungut (Maks): 400V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 500mA, 2.5A, Semasa - Potongan Pemungut (Maksimum): 250µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 17 @ 1A, 5V,

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Taiwan Semiconductor Corporation

TSC4505CX RFG

bahagian bahagian: 256

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 300mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 400V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V,

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Taiwan Semiconductor Corporation

MMBT3906L RFG

bahagian bahagian: 266

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V,

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Taiwan Semiconductor Corporation

MMBT2907A RFG

bahagian bahagian: 171

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 50nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

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Taiwan Semiconductor Corporation

TSA894CT B0

bahagian bahagian: 7118

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 500V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 10mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 10V,

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Taiwan Semiconductor Corporation

TSC873CT A3G

bahagian bahagian: 7107

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 400V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 250mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 250mA, 10V,

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Taiwan Semiconductor Corporation

TSC873CT B0G

bahagian bahagian: 7116

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 400V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 250mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 250mA, 10V,

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Taiwan Semiconductor Corporation

TSC966CT B0G

bahagian bahagian: 7066

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 300mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 400V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 1µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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Taiwan Semiconductor Corporation

TSA894CT A3

bahagian bahagian: 7039

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 500V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 10mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 10V,

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Taiwan Semiconductor Corporation

TSC5988CT A3G

bahagian bahagian: 6764

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 350mV @ 200mA, 5A, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 2A, 1V,

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Taiwan Semiconductor Corporation

TSA894CT A3G

bahagian bahagian: 7053

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 500V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 10mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 10V,

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Taiwan Semiconductor Corporation

TSC966CT A3G

bahagian bahagian: 7063

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 300mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 400V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 1µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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Taiwan Semiconductor Corporation

TSC5988CT B0G

bahagian bahagian: 7075

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 350mV @ 200mA, 5A, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 2A, 1V,

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Taiwan Semiconductor Corporation

TS13005CK C0G

bahagian bahagian: 18768

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 400V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 200mA, 1A, Semasa - Potongan Pemungut (Maksimum): 10µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 24 @ 425mA, 2V,

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Taiwan Semiconductor Corporation

TSC873CW RPG

bahagian bahagian: 37679

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 300mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 400V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 250mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 250mA, 10V,

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Taiwan Semiconductor Corporation

MMBT3906 RFG

bahagian bahagian: 90859

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V,

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Taiwan Semiconductor Corporation

MMBT3904L RFG

bahagian bahagian: 45193

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 50nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V,

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Taiwan Semiconductor Corporation

TSC966CW RPG

bahagian bahagian: 71217

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 300mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 400V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 1µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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Taiwan Semiconductor Corporation

MMBT3904 RFG

bahagian bahagian: 45199

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 50nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V,

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Taiwan Semiconductor Corporation

MMBT2222A RFG

bahagian bahagian: 32264

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 10nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

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