Transistor - FET, MOSFET - Bujang

Rumah
Transistor - FET, MOSFET - Bujang

SIA448DJ-T1-GE3

Vishay Siliconix

SIA448DJ-T1-GE3

bahagian bahagian: 169988

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 15 mOhm @ 12.4A, 4.5V,

Senarai harapan

Vishay Siliconix

SI4404DY-T1-E3

bahagian bahagian: 1527

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 6.5 mOhm @ 23A, 10V,

Senarai harapan

SI4434DY-T1-GE3

Vishay Siliconix

SI4434DY-T1-GE3

bahagian bahagian: 68716

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 250V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.1A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 155 mOhm @ 3A, 10V,

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Vishay Siliconix

IRFI624GPBF

bahagian bahagian: 1532

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 250V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.4A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.1 Ohm @ 2A, 10V,

Senarai harapan

SIE832DF-T1-GE3

Vishay Siliconix

SIE832DF-T1-GE3

bahagian bahagian: 43943

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 5.5 mOhm @ 14A, 10V,

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Vishay Siliconix

IRLZ14S

bahagian bahagian: 1538

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 5V, Rds On (Maks) @ Id, Vgs: 200 mOhm @ 6A, 5V,

Senarai harapan

SI4386DY-T1-GE3

Vishay Siliconix

SI4386DY-T1-GE3

bahagian bahagian: 159083

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 7 mOhm @ 16A, 10V,

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Vishay Siliconix

IRFR210PBF

bahagian bahagian: 69131

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.6A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.5 Ohm @ 1.6A, 10V,

Senarai harapan

SQ4182EY-T1_GE3

Vishay Siliconix

SQ4182EY-T1_GE3

bahagian bahagian: 10824

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 32A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.8 mOhm @ 14A, 10V,

Senarai harapan

Vishay Siliconix

SI4455DY-T1-E3

bahagian bahagian: 73600

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.8A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 295 mOhm @ 4A, 10V,

Senarai harapan

SI4412ADY-T1-E3

Vishay Siliconix

SI4412ADY-T1-E3

bahagian bahagian: 1496

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 8A, 10V,

Senarai harapan

Vishay Siliconix

SI4426DY-T1-E3

bahagian bahagian: 108121

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 8.5A, 4.5V,

Senarai harapan

Vishay Siliconix

SUP75N03-04-E3

bahagian bahagian: 1524

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 4 mOhm @ 75A, 10V,

Senarai harapan

SUD35N05-26L-E3

Vishay Siliconix

SUD35N05-26L-E3

bahagian bahagian: 1474

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 35A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 20A, 10V,

Senarai harapan

SI4425BDY-T1-GE3

Vishay Siliconix

SI4425BDY-T1-GE3

bahagian bahagian: 78344

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 11.4A, 10V,

Senarai harapan

Vishay Siliconix

IRF9530PBF

bahagian bahagian: 45568

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 300 mOhm @ 7.2A, 10V,

Senarai harapan

SI4800BDY-T1-E3

Vishay Siliconix

SI4800BDY-T1-E3

bahagian bahagian: 126818

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 18.5 mOhm @ 9A, 10V,

Senarai harapan

Vishay Siliconix

SI4464DY-T1-E3

bahagian bahagian: 159052

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.7A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 240 mOhm @ 2.2A, 10V,

Senarai harapan

SI4100DY-T1-GE3

Vishay Siliconix

SI4100DY-T1-GE3

bahagian bahagian: 125140

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.8A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 63 mOhm @ 4.4A, 10V,

Senarai harapan

SUD23N06-31L-E3

Vishay Siliconix

SUD23N06-31L-E3

bahagian bahagian: 118954

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 31 mOhm @ 15A, 10V,

Senarai harapan

SI4010DY-T1-GE3

Vishay Siliconix

SI4010DY-T1-GE3

bahagian bahagian: 167778

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 31.3A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.4 mOhm @ 15A, 10V,

Senarai harapan

Vishay Siliconix

IRL520PBF

bahagian bahagian: 63689

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.2A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 5V, Rds On (Maks) @ Id, Vgs: 270 mOhm @ 5.5A, 5V,

Senarai harapan

SI4831BDY-T1-E3

Vishay Siliconix

SI4831BDY-T1-E3

bahagian bahagian: 1596

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.6A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 42 mOhm @ 5A, 10V,

Senarai harapan

SI9433BDY-T1-GE3

Vishay Siliconix

SI9433BDY-T1-GE3

bahagian bahagian: 100195

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.7V, 4.5V, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 6.2A, 4.5V,

Senarai harapan

SQ4425EY-T1_GE3

Vishay Siliconix

SQ4425EY-T1_GE3

bahagian bahagian: 10789

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 18A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 13A, 10V,

Senarai harapan

SQ4483EY-T1_GE3

Vishay Siliconix

SQ4483EY-T1_GE3

bahagian bahagian: 10770

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 8.5 mOhm @ 10A, 10V,

Senarai harapan

SI4103DY-T1-GE3

Vishay Siliconix

SI4103DY-T1-GE3

bahagian bahagian: 10820

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14A (Ta), 16A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 7.9 mOhm @ 10A, 10V,

Senarai harapan

SQ4483BEEY-T1_GE3

Vishay Siliconix

SQ4483BEEY-T1_GE3

bahagian bahagian: 10837

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 22A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 8.5 mOhm @ 10A, 10V,

Senarai harapan

Vishay Siliconix

IRFDC20PBF

bahagian bahagian: 29452

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 320mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 4.4 Ohm @ 190mA, 10V,

Senarai harapan

SIHH28N60E-T1-GE3

Vishay Siliconix

SIHH28N60E-T1-GE3

bahagian bahagian: 10451

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 29A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 98 mOhm @ 14A, 10V,

Senarai harapan

Vishay Siliconix

SI4888DY-T1-E3

bahagian bahagian: 1502

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 7 mOhm @ 16A, 10V,

Senarai harapan

SI7790DP-T1-GE3

Vishay Siliconix

SI7790DP-T1-GE3

bahagian bahagian: 49817

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 4.5 mOhm @ 15A, 10V,

Senarai harapan

SI4884BDY-T1-E3

Vishay Siliconix

SI4884BDY-T1-E3

bahagian bahagian: 128225

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16.5A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 9 mOhm @ 10A, 10V,

Senarai harapan

Vishay Siliconix

IRFP460NPBF

bahagian bahagian: 1584

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 240 mOhm @ 12A, 10V,

Senarai harapan

SUD50N06-07L-E3

Vishay Siliconix

SUD50N06-07L-E3

bahagian bahagian: 1499

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 96A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 7.4 mOhm @ 20A, 10V,

Senarai harapan

SI4143DY-T1-GE3

Vishay Siliconix

SI4143DY-T1-GE3

bahagian bahagian: 81402

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 25.3A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 6.2 mOhm @ 12A, 10V,

Senarai harapan

3600

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