Transistor - FET, MOSFET - Bujang

Rumah
Transistor - FET, MOSFET - Bujang

SI6466ADQ-T1-GE3

Vishay Siliconix

SI6466ADQ-T1-GE3

bahagian bahagian: 1030

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 14 mOhm @ 8.1A, 4.5V,

Senarai harapan

SI7860DP-T1-GE3

Vishay Siliconix

SI7860DP-T1-GE3

bahagian bahagian: 1081

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 8 mOhm @ 18A, 10V,

Senarai harapan

SUM90N06-4M4P-E3

Vishay Siliconix

SUM90N06-4M4P-E3

bahagian bahagian: 987

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 90A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 4.4 mOhm @ 20A, 10V,

Senarai harapan

SI3445DV-T1-GE3

Vishay Siliconix

SI3445DV-T1-GE3

bahagian bahagian: 1039

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 8V, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 42 mOhm @ 5.6A, 4.5V,

Senarai harapan

SI5441DC-T1-GE3

Vishay Siliconix

SI5441DC-T1-GE3

bahagian bahagian: 1068

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.9A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 3.9A, 4.5V,

Senarai harapan

SI3454CDV-T1-GE3

Vishay Siliconix

SI3454CDV-T1-GE3

bahagian bahagian: 1041

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.2A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 3.8A, 10V,

Senarai harapan

SIB455EDK-T1-GE3

Vishay Siliconix

SIB455EDK-T1-GE3

bahagian bahagian: 967

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 27 mOhm @ 5.6A, 4.5V,

Senarai harapan

SI9424BDY-T1-GE3

Vishay Siliconix

SI9424BDY-T1-GE3

bahagian bahagian: 1062

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 7.1A, 4.5V,

Senarai harapan

SI3424DV-T1-GE3

Vishay Siliconix

SI3424DV-T1-GE3

bahagian bahagian: 1007

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 6.7A, 10V,

Senarai harapan

SI4453DY-T1-GE3

Vishay Siliconix

SI4453DY-T1-GE3

bahagian bahagian: 1029

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 6.5 mOhm @ 14A, 4.5V,

Senarai harapan

SI7682DP-T1-GE3

Vishay Siliconix

SI7682DP-T1-GE3

bahagian bahagian: 1069

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 9 mOhm @ 20A, 10V,

Senarai harapan

SI7405BDN-T1-E3

Vishay Siliconix

SI7405BDN-T1-E3

bahagian bahagian: 132128

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 13 mOhm @ 13.5A, 4.5V,

Senarai harapan

SI4462DY-T1-GE3

Vishay Siliconix

SI4462DY-T1-GE3

bahagian bahagian: 6188

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.15A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 480 mOhm @ 1.5A, 10V,

Senarai harapan

SI4418DY-T1-GE3

Vishay Siliconix

SI4418DY-T1-GE3

bahagian bahagian: 1021

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.3A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 130 mOhm @ 3A, 10V,

Senarai harapan

SI3445ADV-T1-GE3

Vishay Siliconix

SI3445ADV-T1-GE3

bahagian bahagian: 1082

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 42 mOhm @ 5.8A, 4.5V,

Senarai harapan

SI4401DY-T1-GE3

Vishay Siliconix

SI4401DY-T1-GE3

bahagian bahagian: 1062

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.7A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 15.5 mOhm @ 10.5A, 10V,

Senarai harapan

Vishay Siliconix

SIHF18N50C-E3

bahagian bahagian: 909

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 18A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 270 mOhm @ 10A, 10V,

Senarai harapan

Vishay Siliconix

IRFR9220PBF

bahagian bahagian: 45557

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.6A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V,

Senarai harapan

SI4176DY-T1-GE3

Vishay Siliconix

SI4176DY-T1-GE3

bahagian bahagian: 6141

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 8.3A, 10V,

Senarai harapan

SI7886ADP-T1-E3

Vishay Siliconix

SI7886ADP-T1-E3

bahagian bahagian: 1120

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 4 mOhm @ 25A, 10V,

Senarai harapan

Vishay Siliconix

SI2321DS-T1-E3

bahagian bahagian: 6142

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.9A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 57 mOhm @ 3.3A, 4.5V,

Senarai harapan

SUD50N04-37P-T4-E3

Vishay Siliconix

SUD50N04-37P-T4-E3

bahagian bahagian: 6120

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.4A (Ta), 8A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 37 mOhm @ 5A, 10V,

Senarai harapan

SI5445BDC-T1-GE3

Vishay Siliconix

SI5445BDC-T1-GE3

bahagian bahagian: 1042

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 33 mOhm @ 5.2A, 4.5V,

Senarai harapan

SI5485DU-T1-GE3

Vishay Siliconix

SI5485DU-T1-GE3

bahagian bahagian: 1084

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 5.9A, 4.5V,

Senarai harapan

SI3473DV-T1-GE3

Vishay Siliconix

SI3473DV-T1-GE3

bahagian bahagian: 1082

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.9A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 23 mOhm @ 7.9A, 4.5V,

Senarai harapan

SUP60N06-12P-GE3

Vishay Siliconix

SUP60N06-12P-GE3

bahagian bahagian: 1099

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 30A, 10V,

Senarai harapan

SI7840BDP-T1-E3

Vishay Siliconix

SI7840BDP-T1-E3

bahagian bahagian: 1072

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 8.5 mOhm @ 16.5A, 10V,

Senarai harapan

SI7856ADP-T1-GE3

Vishay Siliconix

SI7856ADP-T1-GE3

bahagian bahagian: 1107

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.7 mOhm @ 25A, 10V,

Senarai harapan

SI1470DH-T1-GE3

Vishay Siliconix

SI1470DH-T1-GE3

bahagian bahagian: 970

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.1A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 66 mOhm @ 3.8A, 4.5V,

Senarai harapan

SQD35N05-26L-GE3

Vishay Siliconix

SQD35N05-26L-GE3

bahagian bahagian: 1081

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 20A, 10V,

Senarai harapan

SI1304BDL-T1-GE3

Vishay Siliconix

SI1304BDL-T1-GE3

bahagian bahagian: 947

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 900mA (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 270 mOhm @ 900mA, 4.5V,

Senarai harapan

Vishay Siliconix

SUP75P03-07-E3

bahagian bahagian: 23040

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 7 mOhm @ 30A, 10V,

Senarai harapan

SI5486DU-T1-GE3

Vishay Siliconix

SI5486DU-T1-GE3

bahagian bahagian: 1009

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 15 mOhm @ 7.7A, 4.5V,

Senarai harapan

SI7491DP-T1-GE3

Vishay Siliconix

SI7491DP-T1-GE3

bahagian bahagian: 1098

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 8.5 mOhm @ 18A, 10V,

Senarai harapan

Vishay Siliconix

IRF730PBF

bahagian bahagian: 53132

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 400V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.5A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1 Ohm @ 3.3A, 10V,

Senarai harapan

SI1417EDH-T1-GE3

Vishay Siliconix

SI1417EDH-T1-GE3

bahagian bahagian: 967

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.7A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 85 mOhm @ 3.3A, 4.5V,

Senarai harapan

3600

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