Transistor - FET, MOSFET - Bujang

Rumah
Transistor - FET, MOSFET - Bujang

SI5475BDC-T1-E3

Vishay Siliconix

SI5475BDC-T1-E3

bahagian bahagian: 1068

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 5.6A, 4.5V,

Senarai harapan

Vishay Siliconix

SI7601DN-T1-E3

bahagian bahagian: 1114

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 19.2 mOhm @ 11A, 4.5V,

Senarai harapan

SUM75N15-18P-E3

Vishay Siliconix

SUM75N15-18P-E3

bahagian bahagian: 6120

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 20A, 10V,

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Vishay Siliconix

SI7402DN-T1-E3

bahagian bahagian: 1102

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 5.7 mOhm @ 20A, 4.5V,

Senarai harapan

Vishay Siliconix

SI1054X-T1-E3

bahagian bahagian: 1003

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 95 mOhm @ 1.32A, 4.5V,

Senarai harapan

SI7392ADP-T1-GE3

Vishay Siliconix

SI7392ADP-T1-GE3

bahagian bahagian: 1110

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 7.5 mOhm @ 12.5A, 10V,

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Vishay Siliconix

SI3879DV-T1-E3

bahagian bahagian: 6180

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 3.5A, 4.5V,

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Vishay Siliconix

SI1037X-T1-GE3

bahagian bahagian: 1055

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 770mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 195 mOhm @ 770mA, 4.5V,

Senarai harapan

SI4880DY-T1-GE3

Vishay Siliconix

SI4880DY-T1-GE3

bahagian bahagian: 1110

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 8.5 mOhm @ 13A, 10V,

Senarai harapan

SUP60N10-16L-E3

Vishay Siliconix

SUP60N10-16L-E3

bahagian bahagian: 1121

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 16 mOhm @ 30A, 10V,

Senarai harapan

SI5480DU-T1-GE3

Vishay Siliconix

SI5480DU-T1-GE3

bahagian bahagian: 1094

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 16 mOhm @ 7.2A, 10V,

Senarai harapan

SI7866ADP-T1-GE3

Vishay Siliconix

SI7866ADP-T1-GE3

bahagian bahagian: 33379

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 2.4 mOhm @ 20A, 10V,

Senarai harapan

SI5479DU-T1-GE3

Vishay Siliconix

SI5479DU-T1-GE3

bahagian bahagian: 1039

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 6.9A, 4.5V,

Senarai harapan

SUD50N06-07L-GE3

Vishay Siliconix

SUD50N06-07L-GE3

bahagian bahagian: 1025

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 96A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 7.4 mOhm @ 20A, 10V,

Senarai harapan

Vishay Siliconix

SUP85N02-03-E3

bahagian bahagian: 1089

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 85A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 3 mOhm @ 30A, 4.5V,

Senarai harapan

SI7774DP-T1-GE3

Vishay Siliconix

SI7774DP-T1-GE3

bahagian bahagian: 981

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.8 mOhm @ 15A, 10V,

Senarai harapan

SI5401DC-T1-GE3

Vishay Siliconix

SI5401DC-T1-GE3

bahagian bahagian: 1026

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 32 mOhm @ 5.2A, 4.5V,

Senarai harapan

SI7635DP-T1-GE3

Vishay Siliconix

SI7635DP-T1-GE3

bahagian bahagian: 130303

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 4.9 mOhm @ 26A, 10V,

Senarai harapan

SI3454CDV-T1-E3

Vishay Siliconix

SI3454CDV-T1-E3

bahagian bahagian: 1006

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.2A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 3.8A, 10V,

Senarai harapan

Vishay Siliconix

SI7674DP-T1-E3

bahagian bahagian: 1079

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.3 mOhm @ 20A, 10V,

Senarai harapan

SUD08P06-155L-T4E3

Vishay Siliconix

SUD08P06-155L-T4E3

bahagian bahagian: 1074

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.4A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 155 mOhm @ 5A, 10V,

Senarai harapan

Vishay Siliconix

SI1056X-T1-GE3

bahagian bahagian: 984

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 89 mOhm @ 1.32A, 4.5V,

Senarai harapan

Vishay Siliconix

SIE854DF-T1-E3

bahagian bahagian: 1125

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 14.2 mOhm @ 13.2A, 10V,

Senarai harapan

Vishay Siliconix

SI7888DP-T1-E3

bahagian bahagian: 1091

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 12.4A, 10V,

Senarai harapan

Vishay Siliconix

SI1072X-T1-GE3

bahagian bahagian: 1045

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 93 mOhm @ 1.3A, 10V,

Senarai harapan

Vishay Siliconix

SI7160DP-T1-E3

bahagian bahagian: 1073

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 8.7 mOhm @ 15A, 10V,

Senarai harapan

Vishay Siliconix

SI4411DY-T1-E3

bahagian bahagian: 1074

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 13A, 10V,

Senarai harapan

SI5463EDC-T1-GE3

Vishay Siliconix

SI5463EDC-T1-GE3

bahagian bahagian: 1119

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 62 mOhm @ 4A, 4.5V,

Senarai harapan

SI4484EY-T1-GE3

Vishay Siliconix

SI4484EY-T1-GE3

bahagian bahagian: 6124

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 34 mOhm @ 6.9A, 10V,

Senarai harapan

Vishay Siliconix

SI1471DH-T1-E3

bahagian bahagian: 157609

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.7A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 10V, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 2A, 10V,

Senarai harapan

SIE854DF-T1-GE3

Vishay Siliconix

SIE854DF-T1-GE3

bahagian bahagian: 1035

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 14.2 mOhm @ 13.2A, 10V,

Senarai harapan

SI7886ADP-T1-GE3

Vishay Siliconix

SI7886ADP-T1-GE3

bahagian bahagian: 1115

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 4 mOhm @ 25A, 10V,

Senarai harapan

SI4840DY-T1-GE3

Vishay Siliconix

SI4840DY-T1-GE3

bahagian bahagian: 1076

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 9 mOhm @ 14A, 10V,

Senarai harapan

SI4404DY-T1-GE3

Vishay Siliconix

SI4404DY-T1-GE3

bahagian bahagian: 6105

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 6.5 mOhm @ 23A, 10V,

Senarai harapan

SI5913DC-T1-GE3

Vishay Siliconix

SI5913DC-T1-GE3

bahagian bahagian: 166185

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 10V, Rds On (Maks) @ Id, Vgs: 84 mOhm @ 3.7A, 10V,

Senarai harapan

SUD50N03-12P-E3

Vishay Siliconix

SUD50N03-12P-E3

bahagian bahagian: 1096

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 20A, 10V,

Senarai harapan

3600

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