Transistor - FET, MOSFET - Bujang

Rumah
Transistor - FET, MOSFET - Bujang

SIHG21N65EF-GE3

Vishay Siliconix

SIHG21N65EF-GE3

bahagian bahagian: 12350

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 21A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 180 mOhm @ 11A, 10V,

Senarai harapan

SI1422DH-T1-GE3

Vishay Siliconix

SI1422DH-T1-GE3

bahagian bahagian: 107910

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 26 mOhm @ 5.1A, 4.5V,

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SQJ422EP-T1_GE3

Vishay Siliconix

SQJ422EP-T1_GE3

bahagian bahagian: 105698

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 74A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.4 mOhm @ 18A, 10V,

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Vishay Siliconix

SIHF22N60E-GE3

bahagian bahagian: 32877

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 21A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 180 mOhm @ 11A, 10V,

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Vishay Siliconix

SIHG24N65E-GE3

bahagian bahagian: 10853

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 24A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 145 mOhm @ 12A, 10V,

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SIHP28N65EF-GE3

Vishay Siliconix

SIHP28N65EF-GE3

bahagian bahagian: 10311

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 28A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 117 mOhm @ 14A, 10V,

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SI3433CDV-T1-GE3

Vishay Siliconix

SI3433CDV-T1-GE3

bahagian bahagian: 120260

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 38 mOhm @ 5.2A, 4.5V,

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SISA24DN-T1-GE3

Vishay Siliconix

SISA24DN-T1-GE3

bahagian bahagian: 187428

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 1.4 mOhm @ 15A, 10V,

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SIHG28N60EF-GE3

Vishay Siliconix

SIHG28N60EF-GE3

bahagian bahagian: 10031

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 28A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 123 mOhm @ 14A, 10V,

Senarai harapan

SI4056DY-T1-GE3

Vishay Siliconix

SI4056DY-T1-GE3

bahagian bahagian: 199641

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11.1A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 23 mOhm @ 15A, 10V,

Senarai harapan

SIA414DJ-T1-GE3

Vishay Siliconix

SIA414DJ-T1-GE3

bahagian bahagian: 176137

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.2V, 4.5V, Rds On (Maks) @ Id, Vgs: 11 mOhm @ 9.7A, 4.5V,

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SI7149DP-T1-GE3

Vishay Siliconix

SI7149DP-T1-GE3

bahagian bahagian: 96788

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 5.2 mOhm @ 15A, 10V,

Senarai harapan

Vishay Siliconix

IRF830STRLPBF

bahagian bahagian: 54793

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.5 Ohm @ 2.7A, 10V,

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SIHB21N65EF-GE3

Vishay Siliconix

SIHB21N65EF-GE3

bahagian bahagian: 13053

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 21A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 180 mOhm @ 11A, 10V,

Senarai harapan

SI2307BDS-T1-E3

Vishay Siliconix

SI2307BDS-T1-E3

bahagian bahagian: 153121

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 78 mOhm @ 3.2A, 10V,

Senarai harapan

SI3458BDV-T1-E3

Vishay Siliconix

SI3458BDV-T1-E3

bahagian bahagian: 199617

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.1A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 3.2A, 10V,

Senarai harapan

SI3493BDV-T1-E3

Vishay Siliconix

SI3493BDV-T1-E3

bahagian bahagian: 137186

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 27.5 mOhm @ 7A, 4.5V,

Senarai harapan

SUD50P08-25L-E3

Vishay Siliconix

SUD50P08-25L-E3

bahagian bahagian: 57347

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 25.2 mOhm @ 12.5A, 10V,

Senarai harapan

SIR692DP-T1-RE3

Vishay Siliconix

SIR692DP-T1-RE3

bahagian bahagian: 85603

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 250V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 24.2A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 7.5V, 10V, Rds On (Maks) @ Id, Vgs: 63 mOhm @ 10A, 10V,

Senarai harapan

SQD25N15-52_GE3

Vishay Siliconix

SQD25N15-52_GE3

bahagian bahagian: 39824

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 25A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 52 mOhm @ 15A, 10V,

Senarai harapan

Vishay Siliconix

IRLL014TRPBF

bahagian bahagian: 156687

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.7A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 5V, Rds On (Maks) @ Id, Vgs: 200 mOhm @ 1.6A, 5V,

Senarai harapan

SQ2361AEES-T1_GE3

Vishay Siliconix

SQ2361AEES-T1_GE3

bahagian bahagian: 158861

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.8A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 170 mOhm @ 2.4A, 10V,

Senarai harapan

SISS26DN-T1-GE3

Vishay Siliconix

SISS26DN-T1-GE3

bahagian bahagian: 32308

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 4.5 mOhm @ 15A, 10V,

Senarai harapan

Vishay Siliconix

SI8429DB-T1-E1

bahagian bahagian: 158589

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11.7A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.2V, 4.5V, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 1A, 4.5V,

Senarai harapan

SUD45P03-09-GE3

Vishay Siliconix

SUD45P03-09-GE3

bahagian bahagian: 124843

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 45A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 8.7 mOhm @ 20A, 10V,

Senarai harapan

SIHH24N65EF-T1-GE3

Vishay Siliconix

SIHH24N65EF-T1-GE3

bahagian bahagian: 16548

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 23A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 158 mOhm @ 12A, 10V,

Senarai harapan

SUD08P06-155L-GE3

Vishay Siliconix

SUD08P06-155L-GE3

bahagian bahagian: 193963

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.4A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 155 mOhm @ 5A, 10V,

Senarai harapan

SQ3427AEEV-T1_GE3

Vishay Siliconix

SQ3427AEEV-T1_GE3

bahagian bahagian: 184741

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 95 mOhm @ 4.5A, 10V,

Senarai harapan

SI1330EDL-T1-E3

Vishay Siliconix

SI1330EDL-T1-E3

bahagian bahagian: 118364

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 240mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 3V, 10V, Rds On (Maks) @ Id, Vgs: 2.5 Ohm @ 250mA, 10V,

Senarai harapan

SUM110N10-09-E3

Vishay Siliconix

SUM110N10-09-E3

bahagian bahagian: 42606

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 110A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 9.5 mOhm @ 30A, 10V,

Senarai harapan

SI1441EDH-T1-GE3

Vishay Siliconix

SI1441EDH-T1-GE3

bahagian bahagian: 126542

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 41 mOhm @ 5A, 4.5V,

Senarai harapan

SUD50N03-09P-E3

Vishay Siliconix

SUD50N03-09P-E3

bahagian bahagian: 98650

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 63A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 9.5 mOhm @ 20A, 10V,

Senarai harapan

Vishay Siliconix

SI8483DB-T2-E1

bahagian bahagian: 167358

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 26 mOhm @ 1.5A, 4.5V,

Senarai harapan

SI7421DN-T1-GE3

Vishay Siliconix

SI7421DN-T1-GE3

bahagian bahagian: 113309

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 9.8A, 10V,

Senarai harapan

SIR800DP-T1-GE3

Vishay Siliconix

SIR800DP-T1-GE3

bahagian bahagian: 93648

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 10V, Rds On (Maks) @ Id, Vgs: 2.3 mOhm @ 15A, 10V,

Senarai harapan

SIHW47N60EF-GE3

Vishay Siliconix

SIHW47N60EF-GE3

bahagian bahagian: 10860

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 47A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 65 mOhm @ 24A, 10V,

Senarai harapan

3600

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