Transistor - FET, MOSFET - Bujang

Rumah
Transistor - FET, MOSFET - Bujang

Vishay Siliconix

IRF630PBF

bahagian bahagian: 61030

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 400 mOhm @ 5.4A, 10V,

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Vishay Siliconix

SI1069X-T1-GE3

bahagian bahagian: 167518

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 184 mOhm @ 940mA, 4.5V,

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Vishay Siliconix

SIHP24N65E-GE3

bahagian bahagian: 11654

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 24A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 145 mOhm @ 12A, 10V,

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SI5415AEDU-T1-GE3

Vishay Siliconix

SI5415AEDU-T1-GE3

bahagian bahagian: 192191

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 25A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 9.6 mOhm @ 10A, 4.5V,

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Vishay Siliconix

SI7116DN-T1-E3

bahagian bahagian: 74965

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 7.8 mOhm @ 16.4A, 10V,

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Vishay Siliconix

IRFR9214PBF

bahagian bahagian: 46648

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 250V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.7A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 3 Ohm @ 1.7A, 10V,

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SIA415DJ-T1-GE3

Vishay Siliconix

SIA415DJ-T1-GE3

bahagian bahagian: 182929

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 5.6A, 4.5V,

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SUD19P06-60L-E3

Vishay Siliconix

SUD19P06-60L-E3

bahagian bahagian: 125159

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 19A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 10A, 10V,

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SQJ486EP-T1_GE3

Vishay Siliconix

SQJ486EP-T1_GE3

bahagian bahagian: 165181

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 26 mOhm @ 51A, 10V,

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Vishay Siliconix

SIHG33N60E-GE3

bahagian bahagian: 9978

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 33A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 99 mOhm @ 16.5A, 10V,

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SIA418DJ-T1-GE3

Vishay Siliconix

SIA418DJ-T1-GE3

bahagian bahagian: 115181

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 9A, 10V,

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SI3443BDV-T1-E3

Vishay Siliconix

SI3443BDV-T1-E3

bahagian bahagian: 115293

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 4.7A, 4.5V,

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Vishay Siliconix

SI7119DN-T1-E3

bahagian bahagian: 164009

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.8A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 1.05 Ohm @ 1A, 10V,

Senarai harapan

SIA444DJT-T1-GE3

Vishay Siliconix

SIA444DJT-T1-GE3

bahagian bahagian: 190064

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 7.4A, 10V,

Senarai harapan

SIE868DF-T1-GE3

Vishay Siliconix

SIE868DF-T1-GE3

bahagian bahagian: 60974

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 2.3 mOhm @ 20A, 10V,

Senarai harapan

SI4186DY-T1-GE3

Vishay Siliconix

SI4186DY-T1-GE3

bahagian bahagian: 135918

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 35.8A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 2.6 mOhm @ 15A, 10V,

Senarai harapan

SI5404BDC-T1-E3

Vishay Siliconix

SI5404BDC-T1-E3

bahagian bahagian: 105827

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 5.4A, 4.5V,

Senarai harapan

SI7164DP-T1-GE3

Vishay Siliconix

SI7164DP-T1-GE3

bahagian bahagian: 63494

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 6.25 mOhm @ 10A, 10V,

Senarai harapan

Vishay Siliconix

IRFP27N60KPBF

bahagian bahagian: 8963

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 27A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 220 mOhm @ 16A, 10V,

Senarai harapan

SI2319CDS-T1-GE3

Vishay Siliconix

SI2319CDS-T1-GE3

bahagian bahagian: 166284

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.4A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 77 mOhm @ 3.1A, 10V,

Senarai harapan

SIR892DP-T1-GE3

Vishay Siliconix

SIR892DP-T1-GE3

bahagian bahagian: 54262

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.2 mOhm @ 10A, 10V,

Senarai harapan

Vishay Siliconix

SIHP22N60E-GE3

bahagian bahagian: 16471

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 21A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 180 mOhm @ 11A, 10V,

Senarai harapan

SUD50N06-09L-E3

Vishay Siliconix

SUD50N06-09L-E3

bahagian bahagian: 54264

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 9.3 mOhm @ 20A, 10V,

Senarai harapan

SQJ476EP-T1_GE3

Vishay Siliconix

SQJ476EP-T1_GE3

bahagian bahagian: 119114

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 23A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 38 mOhm @ 10A, 10V,

Senarai harapan

SIR422DP-T1-GE3

Vishay Siliconix

SIR422DP-T1-GE3

bahagian bahagian: 139862

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 6.6 mOhm @ 20A, 10V,

Senarai harapan

SI2306BDS-T1-E3

Vishay Siliconix

SI2306BDS-T1-E3

bahagian bahagian: 125659

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.16A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 47 mOhm @ 3.5A, 10V,

Senarai harapan

SI7141DP-T1-GE3

Vishay Siliconix

SI7141DP-T1-GE3

bahagian bahagian: 65801

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 1.9 mOhm @ 25A, 10V,

Senarai harapan

SQJ459EP-T1_GE3

Vishay Siliconix

SQJ459EP-T1_GE3

bahagian bahagian: 136666

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 52A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 3.5A, 10V,

Senarai harapan

SI7655ADN-T1-GE3

Vishay Siliconix

SI7655ADN-T1-GE3

bahagian bahagian: 178778

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.6 mOhm @ 20A, 10V,

Senarai harapan

SQ2315ES-T1_GE3

Vishay Siliconix

SQ2315ES-T1_GE3

bahagian bahagian: 126329

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 3.5A, 10V,

Senarai harapan

SI3442BDV-T1-E3

Vishay Siliconix

SI3442BDV-T1-E3

bahagian bahagian: 121173

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 57 mOhm @ 4A, 4.5V,

Senarai harapan

Vishay Siliconix

SIHG22N65E-GE3

bahagian bahagian: 12610

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 22A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 180 mOhm @ 11A, 10V,

Senarai harapan

SIE810DF-T1-GE3

Vishay Siliconix

SIE810DF-T1-GE3

bahagian bahagian: 40414

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 10V, Rds On (Maks) @ Id, Vgs: 1.4 mOhm @ 25A, 10V,

Senarai harapan

SISA18ADN-T1-GE3

Vishay Siliconix

SISA18ADN-T1-GE3

bahagian bahagian: 138151

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 38.3A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 7.5 mOhm @ 10A, 10V,

Senarai harapan

SQJ456EP-T1_GE3

Vishay Siliconix

SQJ456EP-T1_GE3

bahagian bahagian: 29509

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 32A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 26 mOhm @ 9.3A, 10V,

Senarai harapan

SIHH14N65EF-T1-GE3

Vishay Siliconix

SIHH14N65EF-T1-GE3

bahagian bahagian: 25762

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 271 mOhm @ 7A, 10V,

Senarai harapan

3600

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