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Diod - Pembetulan - Bujang

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  • Diod - Pembetulan - Bujang
8AF05NPP
Vishay Semiconductor Diodes Division

8AF05NPP

bahagian bahagian: 119

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 50A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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80EPS12
Vishay Semiconductor Diodes Division

80EPS12

bahagian bahagian: 112

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 80A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.17V @ 80A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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80EPS08
Vishay Semiconductor Diodes Division

80EPS08

bahagian bahagian: 133

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 80A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.17V @ 80A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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80EPF12
Vishay Semiconductor Diodes Division

80EPF12

bahagian bahagian: 126

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 80A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.35V @ 80A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 480ns,

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80EPF10
Vishay Semiconductor Diodes Division

80EPF10

bahagian bahagian: 66

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 80A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.35V @ 80A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 480ns,

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80EPF06
Vishay Semiconductor Diodes Division

80EPF06

bahagian bahagian: 72

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 80A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 80A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 190ns,

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80EPF02
Vishay Semiconductor Diodes Division

80EPF02

bahagian bahagian: 115

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 80A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 80A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 190ns,

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80EPF04
Vishay Semiconductor Diodes Division

80EPF04

bahagian bahagian: 115

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 80A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 80A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 190ns,

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8EWF10S
Vishay Semiconductor Diodes Division

8EWF10S

bahagian bahagian: 68

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 270ns,

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8EWF12S
Vishay Semiconductor Diodes Division

8EWF12S

bahagian bahagian: 20

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 270ns,

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8TQ100S
Vishay Semiconductor Diodes Division

8TQ100S

bahagian bahagian: 10015

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 720mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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8TQ080S
Vishay Semiconductor Diodes Division

8TQ080S

bahagian bahagian: 9992

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 720mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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8TQ060
Vishay Semiconductor Diodes Division

8TQ060

bahagian bahagian: 10041

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 720mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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8TQ080
Vishay Semiconductor Diodes Division

8TQ080

bahagian bahagian: 5059

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 720mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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8EWS08S
Vishay Semiconductor Diodes Division

8EWS08S

bahagian bahagian: 10060

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 8A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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8EWF06S
Vishay Semiconductor Diodes Division

8EWF06S

bahagian bahagian: 10034

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 140ns,

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8EWF06STRL
Vishay Semiconductor Diodes Division

8EWF06STRL

bahagian bahagian: 10052

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 140ns,

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8EWF02S
Vishay Semiconductor Diodes Division

8EWF02S

bahagian bahagian: 10049

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 140ns,

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8EWF04S
Vishay Semiconductor Diodes Division

8EWF04S

bahagian bahagian: 9990

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 140ns,

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85EPF04
Vishay Semiconductor Diodes Division

85EPF04

bahagian bahagian: 10073

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 85A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 85A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 190ns,

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95HQ015
Vishay Semiconductor Diodes Division

95HQ015

bahagian bahagian: 9931

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 15V, Semasa - Rata-rata Disahkan (Io): 95A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 460mV @ 95A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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AS1PK-M3/85A
Vishay Semiconductor Diodes Division

AS1PK-M3/85A

bahagian bahagian: 118702

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1.5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.5µs,

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AS1PJHM3/85A
Vishay Semiconductor Diodes Division

AS1PJHM3/85A

bahagian bahagian: 157782

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1.5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.5µs,

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AR1PKHM3/85A
Vishay Semiconductor Diodes Division

AR1PKHM3/85A

bahagian bahagian: 110954

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 120ns,

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AS1PG-M3/84A
Vishay Semiconductor Diodes Division

AS1PG-M3/84A

bahagian bahagian: 115320

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1.5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.5µs,

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AS1PKHM3/85A
Vishay Semiconductor Diodes Division

AS1PKHM3/85A

bahagian bahagian: 183191

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1.5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.5µs,

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AR1PG-M3/85A
Vishay Semiconductor Diodes Division

AR1PG-M3/85A

bahagian bahagian: 143525

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 140ns,

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AS1PGHM3/84A
Vishay Semiconductor Diodes Division

AS1PGHM3/84A

bahagian bahagian: 192739

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1.5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.5µs,

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AR1PKHM3/84A
Vishay Semiconductor Diodes Division

AR1PKHM3/84A

bahagian bahagian: 137027

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 120ns,

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AS1PKHM3/84A
Vishay Semiconductor Diodes Division

AS1PKHM3/84A

bahagian bahagian: 186197

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1.5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.5µs,

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AS1PDHM3/85A
Vishay Semiconductor Diodes Division

AS1PDHM3/85A

bahagian bahagian: 198666

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1.5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.5µs,

Senarai harapan
AR1PGHM3/84A
Vishay Semiconductor Diodes Division

AR1PGHM3/84A

bahagian bahagian: 164199

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 140ns,

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AR1PMHM3/85A
Vishay Semiconductor Diodes Division

AR1PMHM3/85A

bahagian bahagian: 131724

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 120ns,

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AR1PD-M3/85A
Vishay Semiconductor Diodes Division

AR1PD-M3/85A

bahagian bahagian: 106984

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 140ns,

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AR1PM-M3/85A
Vishay Semiconductor Diodes Division

AR1PM-M3/85A

bahagian bahagian: 130479

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 120ns,

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AR1PJ-M3/85A
Vishay Semiconductor Diodes Division

AR1PJ-M3/85A

bahagian bahagian: 147970

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 140ns,

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