Diod - Pembetulan - Bujang

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Diod - Pembetulan - Bujang

Vishay Semiconductor Diodes Division

AS4PK-M3/86A

bahagian bahagian: 186584

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 2.4A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 962mV @ 2A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.8µs,

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Vishay Semiconductor Diodes Division

AR4PM-M3/86A

bahagian bahagian: 187999

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1.8A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.9V @ 4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 120ns,

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Vishay Semiconductor Diodes Division

AS4PDHM3_A/I

bahagian bahagian: 135245

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 2.4A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.8µs,

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Vishay Semiconductor Diodes Division

AS4PD-M3/87A

bahagian bahagian: 127822

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 2.4A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 962mV @ 2A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.8µs,

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Vishay Semiconductor Diodes Division

AR3PGHM3_A/I

bahagian bahagian: 174356

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1.8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 140ns,

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Vishay Semiconductor Diodes Division

AS3PGHM3_A/H

bahagian bahagian: 177979

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 2.1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.2µs,

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Vishay Semiconductor Diodes Division

AR3PJ-M3/86A

bahagian bahagian: 109158

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1.8A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 140ns,

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Vishay Semiconductor Diodes Division

AU3PG-M3/86A

bahagian bahagian: 184562

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1.7A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.9V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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Vishay Semiconductor Diodes Division

AS3PMHM3_A/H

bahagian bahagian: 177979

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 2.1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.2µs,

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Vishay Semiconductor Diodes Division

AS3PDHM3_A/I

bahagian bahagian: 186864

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 2.1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.2µs,

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Vishay Semiconductor Diodes Division

AS4PK-M3/87A

bahagian bahagian: 148380

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 2.4A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 962mV @ 2A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.8µs,

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Vishay Semiconductor Diodes Division

AS4PGHM3_A/H

bahagian bahagian: 128798

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 2.4A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.8µs,

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Vishay Semiconductor Diodes Division

AR4PJ-M3/87A

bahagian bahagian: 155636

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 2A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 140ns,

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Vishay Semiconductor Diodes Division

AS3PGHM3_A/I

bahagian bahagian: 186827

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 2.1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.2µs,

Senarai harapan

Vishay Semiconductor Diodes Division

AU3PGHM3_A/H

bahagian bahagian: 121577

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1.7A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.9V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

Senarai harapan

Vishay Semiconductor Diodes Division

AU2PJ-M3/87A

bahagian bahagian: 122155

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1.6A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.9V @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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Vishay Semiconductor Diodes Division

AS3PJ-M3/87A

bahagian bahagian: 128015

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 2.1A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.2µs,

Senarai harapan

Vishay Semiconductor Diodes Division

AU2PDHM3_A/H

bahagian bahagian: 166052

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1.6A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.9V @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

Senarai harapan

Vishay Semiconductor Diodes Division

AS3PD-M3/87A

bahagian bahagian: 159290

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 2.1A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.2µs,

Senarai harapan

Vishay Semiconductor Diodes Division

AU3PJHM3_A/H

bahagian bahagian: 121580

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1.7A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.9V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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Vishay Semiconductor Diodes Division

AR3PK-M3/86A

bahagian bahagian: 165935

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1.6A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.9V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 120ns,

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Vishay Semiconductor Diodes Division

AU2PG-M3/87A

bahagian bahagian: 182163

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1.6A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.9V @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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Vishay Semiconductor Diodes Division

AU2PGHM3_A/I

bahagian bahagian: 174379

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1.6A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.9V @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

Senarai harapan

Vishay Semiconductor Diodes Division

AS4PMHM3_A/I

bahagian bahagian: 135168

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 2.4A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.8µs,

Senarai harapan

Vishay Semiconductor Diodes Division

AU3PD-M3/86A

bahagian bahagian: 184511

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1.7A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.9V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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Vishay Semiconductor Diodes Division

AS3PKHM3_A/I

bahagian bahagian: 186833

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 2.1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.2µs,

Senarai harapan

Vishay Semiconductor Diodes Division

AR4PKHM3_A/I

bahagian bahagian: 128841

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1.8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.9V @ 4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 120ns,

Senarai harapan

Vishay Semiconductor Diodes Division

AS4PKHM3_A/I

bahagian bahagian: 135251

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 2.4A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.8µs,

Senarai harapan

Vishay Semiconductor Diodes Division

AU3PDHM3_A/H

bahagian bahagian: 121540

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1.7A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.9V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

Senarai harapan

Vishay Semiconductor Diodes Division

AS3PM-M3/86A

bahagian bahagian: 102068

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 2.1A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.2µs,

Senarai harapan

Vishay Semiconductor Diodes Division

AR4PK-M3/86A

bahagian bahagian: 187986

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1.8A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.9V @ 4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 120ns,

Senarai harapan

Vishay Semiconductor Diodes Division

AR4PMHM3_A/H

bahagian bahagian: 122741

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1.8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.9V @ 4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 120ns,

Senarai harapan

Vishay Semiconductor Diodes Division

AR3PDHM3_A/H

bahagian bahagian: 166073

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1.8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 140ns,

Senarai harapan

Vishay Semiconductor Diodes Division

AR4PJHM3_A/H

bahagian bahagian: 122789

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 140ns,

Senarai harapan

Vishay Semiconductor Diodes Division

AR3PJ-M3/87A

bahagian bahagian: 142597

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1.8A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 140ns,

Senarai harapan

Vishay Semiconductor Diodes Division

AU2PG-M3/86A

bahagian bahagian: 147505

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1.6A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.9V @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

Senarai harapan

3600

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