Diod - Pembetulan - Bujang | Produk Semikonduktor Diskrit | 100

BYG24G-M3/TR

bahagian bahagian: 160213

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 140ns,

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Vishay Semiconductor Diodes Division

BYG22D-E3/TR

bahagian bahagian: 141773

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 25ns,

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Vishay Semiconductor Diodes Division

BYG24D-M3/TR3

bahagian bahagian: 131968

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 140ns,

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Vishay Semiconductor Diodes Division

BYG10M-E3/TR3

bahagian bahagian: 182415

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG10M-M3/TR3

bahagian bahagian: 178714

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG22D-E3/TR3

bahagian bahagian: 104636

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 25ns,

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Vishay Semiconductor Diodes Division

BYG24GHE3_A/H

bahagian bahagian: 136458

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 140ns,

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Vishay Semiconductor Diodes Division

BYG23MHM3_A/H

bahagian bahagian: 128490

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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Vishay Semiconductor Diodes Division

BYG23T-M3/TR3

bahagian bahagian: 129800

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1300V, Semasa - Rata-rata Disahkan (Io): 1A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.9V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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Vishay Semiconductor Diodes Division

BYG10JHE3_A/I

bahagian bahagian: 120649

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG20DHM3_A/I

bahagian bahagian: 155324

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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Vishay Semiconductor Diodes Division

BYG10JHM3_A/I

bahagian bahagian: 188118

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG22BHE3_A/H

bahagian bahagian: 135545

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 25ns,

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Vishay Semiconductor Diodes Division

BYG10G-M3/TR

bahagian bahagian: 137182

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG10JHE3_A/H

bahagian bahagian: 196477

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG20D-M3/TR

bahagian bahagian: 116559

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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Vishay Semiconductor Diodes Division

BYG20GHE3_A/H

bahagian bahagian: 167113

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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Vishay Semiconductor Diodes Division

BYG10DHE3_A/I

bahagian bahagian: 151425

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG10J-M3/TR3

bahagian bahagian: 167334

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG20G-M3/TR3

bahagian bahagian: 177836

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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Vishay Semiconductor Diodes Division

BYG10K-E3/TR

bahagian bahagian: 116100

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG22A-M3/TR

bahagian bahagian: 126510

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 25ns,

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Vishay Semiconductor Diodes Division

BYG10KHM3_A/H

bahagian bahagian: 113240

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG10D-E3/TR3

bahagian bahagian: 197556

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG10MHM3_A/I

bahagian bahagian: 112695

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG20GHM3_A/H

bahagian bahagian: 164441

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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Vishay Semiconductor Diodes Division

BYG20G-M3/TR

bahagian bahagian: 174425

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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Vishay Semiconductor Diodes Division

BYG10K-M3/TR3

bahagian bahagian: 199071

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG23M-M3/TR3

bahagian bahagian: 120482

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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Vishay Semiconductor Diodes Division

BYG24JHM3_A/H

bahagian bahagian: 162395

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 140ns,

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Vishay Semiconductor Diodes Division

BYG24J-E3/TR3

bahagian bahagian: 109092

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 140ns,

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Vishay Semiconductor Diodes Division

BYG21K-M3/TR

bahagian bahagian: 111717

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 120ns,

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Vishay Semiconductor Diodes Division

BYG20J-M3/TR3

bahagian bahagian: 162156

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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Vishay Semiconductor Diodes Division

BYG10DHM3_A/I

bahagian bahagian: 131985

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG24J-M3/TR

bahagian bahagian: 142403

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 140ns,

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Vishay Semiconductor Diodes Division

BYG10MHE3_A/I

bahagian bahagian: 178334

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4µs,

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