Diod - Pembetulan - Bujang | Produk Semikonduktor Diskrit | 100

BYG10Y-E3/TR3

bahagian bahagian: 119874

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1600V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG22DHE3_A/H

bahagian bahagian: 198448

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 25ns,

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Vishay Semiconductor Diodes Division

BYG21KHM3_A/I

bahagian bahagian: 152155

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 120ns,

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Vishay Semiconductor Diodes Division

BYG20J-E3/TR3

bahagian bahagian: 158166

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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Vishay Semiconductor Diodes Division

BAV20W-E3-18

bahagian bahagian: 197367

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 200mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BAT54WS-G3-08

bahagian bahagian: 194835

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 200mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 800mV @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 5ns,

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Vishay Semiconductor Diodes Division

BAS16WS-G3-18

bahagian bahagian: 113942

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 75V, Semasa - Rata-rata Disahkan (Io): 250mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 150mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 6ns,

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Vishay Semiconductor Diodes Division

BAS170WS-G3-08

bahagian bahagian: 120561

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 70V, Semasa - Rata-rata Disahkan (Io): 70mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 15mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Vishay Semiconductor Diodes Division

BAV21W-HE3-18

bahagian bahagian: 114352

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BAV19W-G3-08

bahagian bahagian: 158404

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 200mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BAT46W-G3-18

bahagian bahagian: 129535

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 150mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 250mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Vishay Semiconductor Diodes Division

BAT42W-G3-18

bahagian bahagian: 111296

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 200mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 650mV @ 50mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 5ns,

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Vishay Semiconductor Diodes Division

BAV20W-G3-18

bahagian bahagian: 199754

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 200mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BAV19W-HE3-08

bahagian bahagian: 117566

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 200mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BAV21WS-G3-18

bahagian bahagian: 138262

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 200mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BAV20WS-HG3-18

bahagian bahagian: 325

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 200mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BAT42WS-G3-08

bahagian bahagian: 139086

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 200mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 650mV @ 50mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 5ns,

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Vishay Semiconductor Diodes Division

BAT42W-E3-18

bahagian bahagian: 148789

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 200mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 650mV @ 50mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 5ns,

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Vishay Semiconductor Diodes Division

BAT54WS-HE3-18

bahagian bahagian: 107239

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 200mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 800mV @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 5ns,

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Vishay Semiconductor Diodes Division

BAT54W-G3-18

bahagian bahagian: 140508

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 200mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 800mV @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 5ns,

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Vishay Semiconductor Diodes Division

BAS16WS-HE3-08

bahagian bahagian: 148285

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 75V, Semasa - Rata-rata Disahkan (Io): 250mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 150mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 6ns,

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Vishay Semiconductor Diodes Division

BAT46W-HE3-08

bahagian bahagian: 133467

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 150mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 250mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Vishay Semiconductor Diodes Division

BAT54WS-E3-18

bahagian bahagian: 128129

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 200mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 800mV @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 5ns,

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Vishay Semiconductor Diodes Division

BAV20W-HE3-18

bahagian bahagian: 115332

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 200mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BAT42WS-G3-18

bahagian bahagian: 155536

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 200mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 650mV @ 50mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 5ns,

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Vishay Semiconductor Diodes Division

BAS170WS-G3-18

bahagian bahagian: 174272

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 70V, Semasa - Rata-rata Disahkan (Io): 70mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 15mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Vishay Semiconductor Diodes Division

BAV19WS-HE3-18

bahagian bahagian: 190986

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 200mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BAT43W-HE3-18

bahagian bahagian: 132335

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 200mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 450mV @ 15mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 5ns,

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Vishay Semiconductor Diodes Division

BAV21WS-E3-18

bahagian bahagian: 163202

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 200mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BAV21WS-E3-08

bahagian bahagian: 163559

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 200mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BAV21W-G3-08

bahagian bahagian: 185224

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BAV19WS-E3-08

bahagian bahagian: 141866

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 200mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BAS16D-E3-18

bahagian bahagian: 146436

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 75V, Semasa - Rata-rata Disahkan (Io): 250mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 150mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 6ns,

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Vishay Semiconductor Diodes Division

BAV20WS-E3-18

bahagian bahagian: 197062

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 200mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BAV19WS-G3-08

bahagian bahagian: 176953

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 200mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BAV20WS-HG3-08

bahagian bahagian: 367

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 200mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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