bahagian bahagian: 413
Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 29.5A (Tc), Rds On (Maks) @ Id, Vgs: 98 mOhm @ 20A, 20V, Vgs (th) (Maks) @ Id: 2.2V @ 1mA (Typ),