Transistor - FET, MOSFET - Bujang

Rumah
Transistor - FET, MOSFET - Bujang

C2M1000170J-TR

bahagian bahagian: 12544

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 1700V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 20V, Rds On (Maks) @ Id, Vgs: 1.4 Ohm @ 2A, 20V,

Senarai harapan

C3M0065090J-TR

bahagian bahagian: 6828

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 900V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 35A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 15V, Rds On (Maks) @ Id, Vgs: 78 mOhm @ 20A, 15V,

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C3M0120100K

bahagian bahagian: 8031

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 1000V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 22A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 15V, Rds On (Maks) @ Id, Vgs: 155 mOhm @ 15A, 15V,

Senarai harapan

C3M0120090J-TR

bahagian bahagian: 10635

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 900V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 22A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 15V, Rds On (Maks) @ Id, Vgs: 155 mOhm @ 15A, 15V,

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C3M0030090K

bahagian bahagian: 2469

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 900V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 63A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 15V, Rds On (Maks) @ Id, Vgs: 39 mOhm @ 35A, 15V,

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C2M0045170P

bahagian bahagian: 2736

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 1700V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 72A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 20V, Rds On (Maks) @ Id, Vgs: 59 mOhm @ 50A, 20V,

Senarai harapan

E3M0120090D

bahagian bahagian: 3307

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 900V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 23A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 15V, Rds On (Maks) @ Id, Vgs: 155 mOhm @ 15A, 15V,

Senarai harapan

C3M0280090J

bahagian bahagian: 19166

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 900V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 15V, Rds On (Maks) @ Id, Vgs: 360 mOhm @ 7.5A, 15V,

Senarai harapan

C3M0075120K

bahagian bahagian: 5595

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 15V, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 20A, 15V,

Senarai harapan

C3M0120100J

bahagian bahagian: 3965

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 1000V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 22A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 15V, Rds On (Maks) @ Id, Vgs: 155 mOhm @ 15A, 15V,

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CPMF-1200-S080B

CPMF-1200-S080B

bahagian bahagian: 2177

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 20V, Rds On (Maks) @ Id, Vgs: 110 mOhm @ 20A, 20V,

Senarai harapan

C2M0025120D

bahagian bahagian: 1093

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 90A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 20V, Rds On (Maks) @ Id, Vgs: 34 mOhm @ 50A, 20V,

Senarai harapan

C3M0280090J-TR

bahagian bahagian: 19172

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 900V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 15V, Rds On (Maks) @ Id, Vgs: 360 mOhm @ 7.5A, 15V,

Senarai harapan

C3M0065100J

bahagian bahagian: 2848

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 1000V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 35A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 15V, Rds On (Maks) @ Id, Vgs: 78 mOhm @ 20A, 15V,

Senarai harapan

C2M0080170P

bahagian bahagian: 2196

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 1700V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 20V, Rds On (Maks) @ Id, Vgs: 125 mOhm @ 28A, 20V,

Senarai harapan

CPMF-1200-S160B

CPMF-1200-S160B

bahagian bahagian: 2236

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 28A (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 20V, Rds On (Maks) @ Id, Vgs: 220 mOhm @ 10A, 20V,

Senarai harapan

C2M0045170D

bahagian bahagian: 866

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 1700V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 72A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 20V, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 50A, 20V,

Senarai harapan

C3M0280090D

bahagian bahagian: 20168

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 900V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11.5A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 15V, Rds On (Maks) @ Id, Vgs: 360 mOhm @ 7.5A, 15V,

Senarai harapan

C3M0075120J

bahagian bahagian: 5794

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 15V, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 20A, 15V,

Senarai harapan

C3M0065100K

bahagian bahagian: 5808

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 1000V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 35A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 15V, Rds On (Maks) @ Id, Vgs: 78 mOhm @ 20A, 15V,

Senarai harapan

C3M0120090J

bahagian bahagian: 10579

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 900V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 22A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 15V, Rds On (Maks) @ Id, Vgs: 155 mOhm @ 15A, 15V,

Senarai harapan

CMF20120D

bahagian bahagian: 976

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 42A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 20V, Rds On (Maks) @ Id, Vgs: 110 mOhm @ 20A, 20V,

Senarai harapan

CMF10120D

bahagian bahagian: 1120

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 24A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 20V, Rds On (Maks) @ Id, Vgs: 220 mOhm @ 10A, 20V,

Senarai harapan

C3M0120090D

bahagian bahagian: 10936

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 900V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 23A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 15V, Rds On (Maks) @ Id, Vgs: 155 mOhm @ 15A, 15V,

Senarai harapan

C2M0040120D

bahagian bahagian: 2045

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 20V, Rds On (Maks) @ Id, Vgs: 52 mOhm @ 40A, 20V,

Senarai harapan

C2M0160120D

bahagian bahagian: 8382

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 19A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 20V, Rds On (Maks) @ Id, Vgs: 196 mOhm @ 10A, 20V,

Senarai harapan

C3M0065100J-TR

bahagian bahagian: 93

Jenis FET: N-Channel, Teknologi: SiC (Silicon Carbide Junction Transistor), Saliran ke Voltan Sumber (Vdss): 1000V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 35A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 15V, Rds On (Maks) @ Id, Vgs: 78 mOhm @ 20A, 15V,

Senarai harapan

C2M1000170J

bahagian bahagian: 12480

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 1700V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 20V, Rds On (Maks) @ Id, Vgs: 1.4 Ohm @ 2A, 20V,

Senarai harapan

C3M0075120J-TR

bahagian bahagian: 280

Jenis FET: N-Channel, Teknologi: SiC (Silicon Carbide Junction Transistor), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 15V, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 20A, 15V,

Senarai harapan

E3M0065090D

bahagian bahagian: 9953

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 900V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 35A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 15V, Rds On (Maks) @ Id, Vgs: 84.5 mOhm @ 20A, 15V,

Senarai harapan

E3M0280090D

bahagian bahagian: 8442

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 900V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11.5A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 15V, Rds On (Maks) @ Id, Vgs: 360 mOhm @ 7.5A, 15V,

Senarai harapan

C3M0065090D

bahagian bahagian: 6981

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 900V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 36A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 15V, Rds On (Maks) @ Id, Vgs: 78 mOhm @ 20A, 15V,

Senarai harapan

C3M0065090J

bahagian bahagian: 6843

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 900V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 35A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 15V, Rds On (Maks) @ Id, Vgs: 78 mOhm @ 20A, 15V,

Senarai harapan

C2M0280120D

bahagian bahagian: 12900

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 20V, Rds On (Maks) @ Id, Vgs: 370 mOhm @ 6A, 20V,

Senarai harapan

C2M1000170D

bahagian bahagian: 13276

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 1700V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.9A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 20V, Rds On (Maks) @ Id, Vgs: 1.1 Ohm @ 2A, 20V,

Senarai harapan

C2M0080120D

bahagian bahagian: 4209

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 36A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 20V, Rds On (Maks) @ Id, Vgs: 98 mOhm @ 20A, 20V,

Senarai harapan

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