Diod - Pembetulan - Bujang

C3D04060F

bahagian bahagian: 37807

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 6A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 4A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

C4D05120E-TR

bahagian bahagian: 20880

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 19A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 5A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

C4D10120E-TR

bahagian bahagian: 10448

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 33A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 10A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

C3D06060G-TR

bahagian bahagian: 40422

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 19A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 6A, Kepantasan: No Recovery Time > 500mA (Io),

C3D02065E-TR

bahagian bahagian: 114886

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 8A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

C3D08060G-TR

bahagian bahagian: 30363

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 24A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 6A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

C3D03065E-TR

bahagian bahagian: 76100

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 11A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

C3D02060E-TR

bahagian bahagian: 122143

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

C3D10060G-TR

bahagian bahagian: 24327

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 29A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

C3D04065E-TR

bahagian bahagian: 57453

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 13.5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 4A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

C3D03060E-TR

bahagian bahagian: 80343

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 11A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

C4D08120E-TR

bahagian bahagian: 13953

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 24.5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 8A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

C3D04060E-TR

bahagian bahagian: 60464

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 13.5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

E4D20120A

bahagian bahagian: 634

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 54.5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 20A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

CPW3-1700-S025B-WP

bahagian bahagian: 1137

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1700V, Semasa - Rata-rata Disahkan (Io): 25A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2V @ 25A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

C2D05120A

bahagian bahagian: 9158

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 17.5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 5A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

C4D15120H

bahagian bahagian: 501

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 39A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 15A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

CPW3-1700-S010B-WP

bahagian bahagian: 3535

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1700V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2V @ 10A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

C4D08120A

bahagian bahagian: 8738

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 24.5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 7.5A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

C4D20120H

bahagian bahagian: 3141

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 54A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 20A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

C4D10120H

bahagian bahagian: 3213

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 31.5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 10A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

C3D25170H

bahagian bahagian: 1223

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1700V, Semasa - Rata-rata Disahkan (Io): 26.3A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.5V @ 25A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

CVFD20065A

bahagian bahagian: 7144

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 57A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.45V @ 20A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

C4D15120A

bahagian bahagian: 4355

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 43.5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 15A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

C3D03060A

bahagian bahagian: 50190

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 11A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 3A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

C3D16065A

bahagian bahagian: 9050

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 39A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 16A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

C2D05120E-TR

bahagian bahagian: 14702

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 17.5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 5A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

C3D04065A

bahagian bahagian: 35635

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 13.5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 4A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

C3D12065A

bahagian bahagian: 11857

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 35A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 12A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

C3D06065A

bahagian bahagian: 23636

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 19A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 6A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

C3D08065I

bahagian bahagian: 17098

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 16.5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 8A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

C3D08065A

bahagian bahagian: 17783

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 24A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 8A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

C2D05120E

bahagian bahagian: 9200

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 17.5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 5A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

C3D10170H

bahagian bahagian: 3661

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1700V, Semasa - Rata-rata Disahkan (Io): 14.4A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 2V @ 10A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

C3D10065A

bahagian bahagian: 14272

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 30A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 10A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

CPW2-1200-S010B-SK

bahagian bahagian: 1446