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Dioda - Penyearah - Susunan

80CNQ035ASM
Vishay Semiconductor Diodes Division

80CNQ035ASM

bahagian bahagian: 3642

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 35V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 40A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 520mV @ 40A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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81CNQ035ASM
Vishay Semiconductor Diodes Division

81CNQ035ASM

bahagian bahagian: 3654

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 35V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 40A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 740mV @ 80A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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81CNQ035ASL
Vishay Semiconductor Diodes Division

81CNQ035ASL

bahagian bahagian: 3668

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 35V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 40A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 740mV @ 80A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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80CPQ020
Vishay Semiconductor Diodes Division

80CPQ020

bahagian bahagian: 3686

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 40A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 460mV @ 40A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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85CNQ015A
Vishay Semiconductor Diodes Division

85CNQ015A

bahagian bahagian: 3599

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 15V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 40A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 450mV @ 80A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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82CNQ030ASL
Vishay Semiconductor Diodes Division

82CNQ030ASL

bahagian bahagian: 3616

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 40A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 80A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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83CNQ100A
Vishay Semiconductor Diodes Division

83CNQ100A

bahagian bahagian: 3587

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 40A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 80A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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82CNQ030A
Vishay Semiconductor Diodes Division

82CNQ030A

bahagian bahagian: 3557

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 40A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 80A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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80CNQ045ASL
Vishay Semiconductor Diodes Division

80CNQ045ASL

bahagian bahagian: 3588

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 40A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 520mV @ 40A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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80CNQ045A
Vishay Semiconductor Diodes Division

80CNQ045A

bahagian bahagian: 3592

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 40A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 520mV @ 40A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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APT30D30BCTG
Microsemi Corporation

APT30D30BCTG

bahagian bahagian: 10437

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 300V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 30A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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APTDF400KK170G
Microsemi Corporation

APTDF400KK170G

bahagian bahagian: 532

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1700V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 480A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.5V @ 400A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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APT2X30D100J
Microsemi Corporation

APT2X30D100J

bahagian bahagian: 3175

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 28A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.3V @ 30A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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APT2X31D20J
Microsemi Corporation

APT2X31D20J

bahagian bahagian: 3498

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 30A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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APT2X30DQ60J
Microsemi Corporation

APT2X30DQ60J

bahagian bahagian: 3829

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.2V @ 30A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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APT2X61DQ100J
Microsemi Corporation

APT2X61DQ100J

bahagian bahagian: 3118

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.8V @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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APT2X101D30J
Microsemi Corporation

APT2X101D30J

bahagian bahagian: 2748

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 300V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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APT2X21DC60J
Microsemi Corporation

APT2X21DC60J

bahagian bahagian: 1164

Konfigurasi Diod: 2 Independent, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 20A, Kepantasan: No Recovery Time > 500mA (Io),

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APT2X60D60J
Microsemi Corporation

APT2X60D60J

bahagian bahagian: 3356

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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APT2X100DQ60J
Microsemi Corporation

APT2X100DQ60J

bahagian bahagian: 3407

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.2V @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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APT2X31D120J
Microsemi Corporation

APT2X31D120J

bahagian bahagian: 2782

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.5V @ 30A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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APT2X50DC60J
Microsemi Corporation

APT2X50DC60J

bahagian bahagian: 739

Konfigurasi Diod: 2 Independent, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 50A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 50A, Kepantasan: No Recovery Time > 500mA (Io),

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APTDF400KK20G
Microsemi Corporation

APTDF400KK20G

bahagian bahagian: 842

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 500A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 400A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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APT2X101D100J
Microsemi Corporation

APT2X101D100J

bahagian bahagian: 2286

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 95A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.5V @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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APT30DQ120BCTG
Microsemi Corporation

APT30DQ120BCTG

bahagian bahagian: 179

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 3.3V @ 30A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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APT2X31D100J
Microsemi Corporation

APT2X31D100J

bahagian bahagian: 3191

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 28A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.3V @ 30A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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APT2X61D120J
Microsemi Corporation

APT2X61D120J

bahagian bahagian: 2464

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 53A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.5V @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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APT2X60D120J
Microsemi Corporation

APT2X60D120J

bahagian bahagian: 2442

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 53A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.5V @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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APT2X61D20J
Microsemi Corporation

APT2X61D20J

bahagian bahagian: 3266

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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APT2X60DQ120J
Microsemi Corporation

APT2X60DQ120J

bahagian bahagian: 3220

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 3.1V @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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APT2X101D120J
Microsemi Corporation

APT2X101D120J

bahagian bahagian: 1994

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 93A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.5V @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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APT2X151DL60J
Microsemi Corporation

APT2X151DL60J

bahagian bahagian: 2375

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 150A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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APT2X100D100J
Microsemi Corporation

APT2X100D100J

bahagian bahagian: 2278

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 95A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.5V @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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APT30D20BCTG
Microsemi Corporation

APT30D20BCTG

bahagian bahagian: 14745

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 30A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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ACDST-70-G
Comchip Technology

ACDST-70-G

bahagian bahagian: 114940

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 70V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 150mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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ACDST-99-G
Comchip Technology

ACDST-99-G

bahagian bahagian: 123192

Konfigurasi Diod: 1 Pair Series Connection, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 70V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 150mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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