Dioda - Penyearah - Susunan | Produk Semikonduktor Diskrit | 100

APT2X101S20J

bahagian bahagian: 2725

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 120A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Microsemi Corporation

APT15DQ60BCTG

bahagian bahagian: 20940

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.4V @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Microsemi Corporation

APT2X20DC60J

bahagian bahagian: 1426

Konfigurasi Diod: 2 Independent, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 20A, Kepantasan: No Recovery Time > 500mA (Io),

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Microsemi Corporation

APT60DQ60BCTG

bahagian bahagian: 11515

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.4V @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Microsemi Corporation

APT2X21DC120J

bahagian bahagian: 1510

Konfigurasi Diod: 2 Independent, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 20A, Kepantasan: No Recovery Time > 500mA (Io),

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Microsemi Corporation

APT2X60D30J

bahagian bahagian: 4471

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 300V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Microsemi Corporation

APT30D100BCAG

bahagian bahagian: 4419

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 18A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.3V @ 30A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Microsemi Corporation

APT10SCD65KCT

bahagian bahagian: 7652

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 17A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 10A, Kepantasan: No Recovery Time > 500mA (Io),

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Microsemi Corporation

APT2X60DC120J

bahagian bahagian: 647

Konfigurasi Diod: 2 Independent, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 60A, Kepantasan: No Recovery Time > 500mA (Io),

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Microsemi Corporation

APT2X40DC120J

bahagian bahagian: 910

Konfigurasi Diod: 2 Independent, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 40A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 40A, Kepantasan: No Recovery Time > 500mA (Io),

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Microsemi Corporation

APT2X40DC60J

bahagian bahagian: 4083

Konfigurasi Diod: 2 Independent, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 40A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 40A, Kepantasan: No Recovery Time > 500mA (Io),

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Microsemi Corporation

APT2X31DC120J

bahagian bahagian: 4104

Konfigurasi Diod: 2 Independent, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 30A, Kepantasan: No Recovery Time > 500mA (Io),

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Microsemi Corporation

APT2X30DC120J

bahagian bahagian: 4162

Konfigurasi Diod: 2 Independent, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 30A, Kepantasan: No Recovery Time > 500mA (Io),

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Microsemi Corporation

APT2X20DC120J

bahagian bahagian: 1523

Konfigurasi Diod: 2 Independent, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 20A, Kepantasan: No Recovery Time > 500mA (Io),

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Microsemi Corporation

APTDC902U601G

bahagian bahagian: 4122

Konfigurasi Diod: 2 Independent, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 90A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 90A, Kepantasan: No Recovery Time > 500mA (Io),

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Microsemi Corporation

APT10SCD120BCT

bahagian bahagian: 3952

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 36A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 10A, Kepantasan: No Recovery Time > 500mA (Io),

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Microsemi Corporation

APT2X150DL60J

bahagian bahagian: 2369

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 150A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Microsemi Corporation

APT2X41DC120J

bahagian bahagian: 952

Konfigurasi Diod: 2 Independent, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 40A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 40A, Kepantasan: No Recovery Time > 500mA (Io),

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Microsemi Corporation

APT2X50DC120J

bahagian bahagian: 777

Konfigurasi Diod: 2 Independent, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 50A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 50A, Kepantasan: No Recovery Time > 500mA (Io),

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Microsemi Corporation

APT60DQ120LCTG

bahagian bahagian: 3868

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 3.3V @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Microsemi Corporation

APT8DQ60KCTG

bahagian bahagian: 3871

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.4V @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Microsemi Corporation

APT60D30LCTG

bahagian bahagian: 3895

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 300V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Microsemi Corporation

APT60D20LCTG

bahagian bahagian: 3885

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Microsemi Corporation

APT40DQ120BCTG

bahagian bahagian: 4438

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 40A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 3.3V @ 40A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Microsemi Corporation

APT40DQ100BCTG

bahagian bahagian: 3858

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 40A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 3V @ 40A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Microsemi Corporation

APT30DS60BG

bahagian bahagian: 6132

Konfigurasi Diod: 1 Pair Series Connection, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 4V @ 30A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Microsemi Corporation

APT30DQ100BCTG

bahagian bahagian: 3860

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 3V @ 30A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Microsemi Corporation

APT2X60DQ60J

bahagian bahagian: 4074

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.3V @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Microsemi Corporation

APT2X60D40J

bahagian bahagian: 3544

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Microsemi Corporation

APT2X60D20J

bahagian bahagian: 3886

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Microsemi Corporation

APT2X30D40J

bahagian bahagian: 4128

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 30A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Microsemi Corporation

APT2X30D30J

bahagian bahagian: 4064

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 300V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 30A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Microsemi Corporation

APT2X100D30J

bahagian bahagian: 3857

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 300V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Microsemi Corporation

APT2X100D40J

bahagian bahagian: 2926

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Comchip Technology

ACDSV6-4448TI-G

bahagian bahagian: 143494

Konfigurasi Diod: 3 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Comchip Technology

ACDST6-4448TI-G

bahagian bahagian: 4514

Konfigurasi Diod: 3 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 75V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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