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Transistor - Bipolar (BJT) - Susunan

PBSS5160PAPSX
Nexperia USA Inc.

PBSS5160PAPSX

bahagian bahagian: 126077

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 550mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V,

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PBSS4160PANPSX
Nexperia USA Inc.

PBSS4160PANPSX

bahagian bahagian: 143921

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 120mV @ 50mA, 500mA / 340mV @ 100mA, 1A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V,

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PMP4201Y,135
Nexperia USA Inc.

PMP4201Y,135

bahagian bahagian: 137672

Jenis Transistor: 2 NPN (Dual) Matched Pair, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

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PBSS4032SN,115
Nexperia USA Inc.

PBSS4032SN,115

bahagian bahagian: 155073

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 5.7A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 450mV @ 300mA, 6A, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V,

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JANTXV2N6989
Microsemi Corporation

JANTXV2N6989

bahagian bahagian: 1252

Jenis Transistor: 4 NPN (Quad), Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

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JANTX2N3811
Microsemi Corporation

JANTX2N3811

bahagian bahagian: 4496

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

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MPQ2484
Central Semiconductor Corp

MPQ2484

bahagian bahagian: 12533

Jenis Transistor: 4 NPN (Quad), Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Semasa - Potongan Pemungut (Maksimum): 20nA (ICBO),

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MD7003B
Central Semiconductor Corp

MD7003B

bahagian bahagian: 4476

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 100µA, 10V,

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MPQ2369
Central Semiconductor Corp

MPQ2369

bahagian bahagian: 10973

Jenis Transistor: 4 NPN (Quad), Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 15V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 400nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 2V,

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CMKT3904 TR
Central Semiconductor Corp

CMKT3904 TR

bahagian bahagian: 164378

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 5mA, 50mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V,

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L6221AD013TR
STMicroelectronics

L6221AD013TR

bahagian bahagian: 4421

Jenis Transistor: 4 NPN Darlington (Quad), Semasa - Pemungut (Ic) (Maks): 1.8A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 1.8A,

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ULN2068B
STMicroelectronics

ULN2068B

bahagian bahagian: 26053

Jenis Transistor: 4 NPN Darlington (Quad), Semasa - Pemungut (Ic) (Maks): 1.75A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.4V @ 2mA, 1.25A,

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STD845DN40
STMicroelectronics

STD845DN40

bahagian bahagian: 4505

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 4A, Voltan - Pemecahan Pemancar Pemungut (Maks): 400V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 1A, 4A, Semasa - Potongan Pemungut (Maksimum): 250µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 12 @ 2A, 5V,

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CPH5504-TL-E
ON Semiconductor

CPH5504-TL-E

bahagian bahagian: 197322

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 210mV @ 100mA, 2A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V,

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NSS60100DMTTBG
ON Semiconductor

NSS60100DMTTBG

bahagian bahagian: 164414

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 100mA, 1A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V,

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CPH6538-TL-H
ON Semiconductor

CPH6538-TL-H

bahagian bahagian: 120549

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 700mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 190mV @ 10mA, 200mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V,

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FFB3906
ON Semiconductor

FFB3906

bahagian bahagian: 188837

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 50mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V,

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NSVT45010MW6T1G
ON Semiconductor

NSVT45010MW6T1G

bahagian bahagian: 147625

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 650mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V,

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ULN2003V12T16-13
Diodes Incorporated

ULN2003V12T16-13

bahagian bahagian: 155544

Jenis Transistor: 7 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Semasa - Potongan Pemungut (Maksimum): 50µA,

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ZXTD4591AM832TA
Diodes Incorporated

ZXTD4591AM832TA

bahagian bahagian: 6458

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 2A, 1.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 100mA, 1A, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V / 300 @ 100mA, 5V,

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MMDT4413-7-F
Diodes Incorporated

MMDT4413-7-F

bahagian bahagian: 144827

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 750mV @ 50mA, 500mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V / 100 @ 150mA, 2V,

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ZDT6790TC
Diodes Incorporated

ZDT6790TC

bahagian bahagian: 4397

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, 40V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 5mA, 1A / 750mV @ 50mA, 2A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 400 @ 1A, 2V / 300 @ 10mA, 2V,

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ZDT690TC
Diodes Incorporated

ZDT690TC

bahagian bahagian: 4459

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 5mA, 1A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 400 @ 1A, 2V,

Bersenang-senang
DN0150ADJ-7
Diodes Incorporated

DN0150ADJ-7

bahagian bahagian: 192795

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V,

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ZXTDC3M832TA
Diodes Incorporated

ZXTDC3M832TA

bahagian bahagian: 4621

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 4A, 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, 40V, Ketepuan Vce (Maks) @ Ib, Ic: 320mV @ 200mA, 4A / 370mV @ 250mA, 2.5A, Semasa - Potongan Pemungut (Maksimum): 25nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V / 60 @ 1.5A, 2V,

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ZDT6758TC
Diodes Incorporated

ZDT6758TC

bahagian bahagian: 4490

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 400V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 10mA, 100mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 10V,

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LBN150B01-7
Diodes Incorporated

LBN150B01-7

bahagian bahagian: 252

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 360mV @ 20mA, 200mA / 500mV @ 20mA, 200mA, Semasa - Potongan Pemungut (Maksimum): 50nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 1V / 32 @ 100mA, 1V,

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SLA6012
Sanken

SLA6012

bahagian bahagian: 25576

Jenis Transistor: 3 NPN, 3 PNP Darlington (3-Phase Bridge), Semasa - Pemungut (Ic) (Maks): 4A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 6mA, 3A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 4V,

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SLA6026
Sanken

SLA6026

bahagian bahagian: 10860

Jenis Transistor: 3 NPN, 3 PNP Darlington (3-Phase Bridge), Semasa - Pemungut (Ic) (Maks): 10A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 12mA, 6A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 2000 @ 6A, 4V,

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STA431A
Sanken

STA431A

bahagian bahagian: 22688

Jenis Transistor: 2 NPN, 2 PNP (H-Bridge), Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 200mA, 2A, Semasa - Potongan Pemungut (Maksimum): 100µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 1A, 4V,

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ULN2003APG,CN
Toshiba Semiconductor and Storage

ULN2003APG,CN

bahagian bahagian: 4401

Jenis Transistor: 7 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Semasa - Potongan Pemungut (Maksimum): 50µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V,

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QST8TR
Rohm Semiconductor

QST8TR

bahagian bahagian: 165043

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 1.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 12V, Ketepuan Vce (Maks) @ Ib, Ic: 200mV @ 25mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V,

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XN0550100L
Panasonic Electronic Components

XN0550100L

bahagian bahagian: 4463

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V,

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XP0B30100L
Panasonic Electronic Components

XP0B30100L

bahagian bahagian: 4470

Jenis Transistor: NPN, PNP Complementary Darlington, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V,

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XP0555400L
Panasonic Electronic Components

XP0555400L

bahagian bahagian: 4404

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 1V,

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ULN2003ADG4
Texas Instruments

ULN2003ADG4

bahagian bahagian: 130303

Jenis Transistor: 7 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Semasa - Potongan Pemungut (Maksimum): 50µA,

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