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Transistor - Bipolar (BJT) - Susunan

EMY1T2R
Rohm Semiconductor

EMY1T2R

bahagian bahagian: 115385

Jenis Transistor: NPN, PNP (Emitter Coupled), Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

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EMT1T2R
Rohm Semiconductor

EMT1T2R

bahagian bahagian: 173955

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

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MMDT3906-7
Diodes Incorporated

MMDT3906-7

bahagian bahagian: 4376

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 50mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V,

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ZXT12N20DXTC
Diodes Incorporated

ZXT12N20DXTC

bahagian bahagian: 4485

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 3.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Ketepuan Vce (Maks) @ Ib, Ic: 200mV @ 50mA, 3.5A, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V,

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ZXTD2M832TA
Diodes Incorporated

ZXTD2M832TA

bahagian bahagian: 4493

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 3.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 350mA, 3.5A, Semasa - Potongan Pemungut (Maksimum): 25nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V,

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ULN2002AS16-13
Diodes Incorporated

ULN2002AS16-13

bahagian bahagian: 177536

Jenis Transistor: 7 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Semasa - Potongan Pemungut (Maksimum): 50µA,

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ZDT619TA
Diodes Incorporated

ZDT619TA

bahagian bahagian: 4472

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 200mV @ 50mA, 2A, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V,

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DST847BDJ-7
Diodes Incorporated

DST847BDJ-7

bahagian bahagian: 122028

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

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FFB2227A
ON Semiconductor

FFB2227A

bahagian bahagian: 142400

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 1.4V @ 30mA, 300mA, Semasa - Potongan Pemungut (Maksimum): 30nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V,

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MC1413DG
ON Semiconductor

MC1413DG

bahagian bahagian: 130824

Jenis Transistor: 7 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V,

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NSVT45010MW6T3G
ON Semiconductor

NSVT45010MW6T3G

bahagian bahagian: 173981

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 650mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V,

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NST3906DP6T5G
ON Semiconductor

NST3906DP6T5G

bahagian bahagian: 122960

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 50mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V,

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FMBM5551-SB16001
ON Semiconductor

FMBM5551-SB16001

bahagian bahagian: 4423

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 160V, Ketepuan Vce (Maks) @ Ib, Ic: 200mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Bersenang-senang
SMBT3904DW1T1G
ON Semiconductor

SMBT3904DW1T1G

bahagian bahagian: 105999

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 5mA, 50mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V,

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CPH6532-TL-E
ON Semiconductor

CPH6532-TL-E

bahagian bahagian: 178184

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 190mV @ 10mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V,

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MMPQ2222
ON Semiconductor

MMPQ2222

bahagian bahagian: 4476

Jenis Transistor: 4 NPN (Quad), Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V,

Bersenang-senang
SBC857CDW1T1G
ON Semiconductor

SBC857CDW1T1G

bahagian bahagian: 194077

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 650mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V,

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FMB3906
ON Semiconductor

FMB3906

bahagian bahagian: 152486

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 50mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V,

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MBT2222ADW1T1G
ON Semiconductor

MBT2222ADW1T1G

bahagian bahagian: 141251

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 10nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

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ULN2803AFWG,C,EL
Toshiba Semiconductor and Storage

ULN2803AFWG,C,EL

bahagian bahagian: 4471

Jenis Transistor: 8 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V,

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HN1C03F-B(TE85L,F)
Toshiba Semiconductor and Storage

HN1C03F-B(TE85L,F)

bahagian bahagian: 9945

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 300mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Ketepuan Vce (Maks) @ Ib, Ic: 100mV @ 3mA, 30mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V,

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CMXT2907A TR
Central Semiconductor Corp

CMXT2907A TR

bahagian bahagian: 186323

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 10nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

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SN75468NSRG4
Texas Instruments

SN75468NSRG4

bahagian bahagian: 91218

Jenis Transistor: 7 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA,

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XN0150400L
Panasonic Electronic Components

XN0150400L

bahagian bahagian: 6517

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 300mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Ketepuan Vce (Maks) @ Ib, Ic: 100mV @ 3mA, 30mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 500 @ 4mA, 2V,

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XP0555500L
Panasonic Electronic Components

XP0555500L

bahagian bahagian: 4448

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V,

Bersenang-senang
DMC205010R
Panasonic Electronic Components

DMC205010R

bahagian bahagian: 195187

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V,

Bersenang-senang
SG2803J-DESC
Microsemi Corporation

SG2803J-DESC

bahagian bahagian: 4457

Jenis Transistor: 8 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V,

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SLA4030
Sanken

SLA4030

bahagian bahagian: 32628

Jenis Transistor: 4 NPN Darlington (Quad), Semasa - Pemungut (Ic) (Maks): 4A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 10mA, 2A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 4V,

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STA302A
Sanken

STA302A

bahagian bahagian: 23792

Jenis Transistor: 3 PNP Darlington (Emitter Coupled), Semasa - Pemungut (Ic) (Maks): 4A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 2V @ 10mA, 3A, Semasa - Potongan Pemungut (Maksimum): 100µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V,

Bersenang-senang
STA301A
Sanken

STA301A

bahagian bahagian: 26446

Jenis Transistor: 3 NPN Darlington (Emitter Coupled), Semasa - Pemungut (Ic) (Maks): 4A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 2V @ 10mA, 3A, Semasa - Potongan Pemungut (Maksimum): 100µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V,

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PBSS4041SN,115
Nexperia USA Inc.

PBSS4041SN,115

bahagian bahagian: 110764

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 6.7A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 350mV @ 350mA, 7A, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 150 @ 4A, 2V,

Bersenang-senang
PMP5501Y,115
Nexperia USA Inc.

PMP5501Y,115

bahagian bahagian: 143852

Jenis Transistor: 2 PNP (Dual) Matched Pair, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

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PUMZ2,115
Nexperia USA Inc.

PUMZ2,115

bahagian bahagian: 167961

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 5mA, 50mA / 500mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

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PMP5501QASZ
Nexperia USA Inc.

PMP5501QASZ

bahagian bahagian: 145

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V,

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SSM2220PZ
Analog Devices Inc.

SSM2220PZ

bahagian bahagian: 4403

Jenis Transistor: 2 PNP (Dual) Matched Pair, Semasa - Pemungut (Ic) (Maks): 20mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 36V, Ketepuan Vce (Maks) @ Ib, Ic: 100mV @ 100µA, 1mA,

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STS05DTP03
STMicroelectronics

STS05DTP03

bahagian bahagian: 4471

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 250mA, 5A, Semasa - Potongan Pemungut (Maksimum): 1µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V,

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