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Transistor - Bipolar (BJT) - Susunan, Pra-Bias

EMB2T2R
Rohm Semiconductor

EMB2T2R

bahagian bahagian: 155232

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

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UMF21NTR
Rohm Semiconductor

UMF21NTR

bahagian bahagian: 181499

Jenis Transistor: 1 NPN Pre-Biased, 1 PNP, Semasa - Pemungut (Ic) (Maks): 100mA, 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, 12V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 270 @ 10mA, 2V,

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IMD14T108
Rohm Semiconductor

IMD14T108

bahagian bahagian: 107296

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 220 Ohms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 5V,

Bersenang-senang
IMD1AT108
Rohm Semiconductor

IMD1AT108

bahagian bahagian: 144421

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

Bersenang-senang
EMF21T2R
Rohm Semiconductor

EMF21T2R

bahagian bahagian: 179260

Jenis Transistor: 1 NPN Pre-Biased, 1 PNP, Semasa - Pemungut (Ic) (Maks): 100mA, 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, 12V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 270 @ 10mA, 2V,

Bersenang-senang
EMF22T2R
Rohm Semiconductor

EMF22T2R

bahagian bahagian: 1487

Jenis Transistor: 1 NPN Pre-Biased, 1 NPN, Semasa - Pemungut (Ic) (Maks): 100mA, 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, 12V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 270 @ 10mA, 2V,

Bersenang-senang
EMH9FHAT2R
Rohm Semiconductor

EMH9FHAT2R

bahagian bahagian: 21662

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

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FMG9AT248
Rohm Semiconductor

FMG9AT248

bahagian bahagian: 1454

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

Bersenang-senang
DCX143TU-7
Diodes Incorporated

DCX143TU-7

bahagian bahagian: 1400

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

Bersenang-senang
DDA143TH-7
Diodes Incorporated

DDA143TH-7

bahagian bahagian: 180736

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

Bersenang-senang
DDC114EU-7
Diodes Incorporated

DDC114EU-7

bahagian bahagian: 1456

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

Bersenang-senang
DDC143ZU-7-F
Diodes Incorporated

DDC143ZU-7-F

bahagian bahagian: 187836

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Bersenang-senang
DDA123JH-7
Diodes Incorporated

DDA123JH-7

bahagian bahagian: 118010

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Bersenang-senang
DCX4710H-7
Diodes Incorporated

DCX4710H-7

bahagian bahagian: 153117

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V / 80 @ 5mA, 5V,

Bersenang-senang
NSVMUN531335DW1T1G
ON Semiconductor

NSVMUN531335DW1T1G

bahagian bahagian: 161762

Jenis Transistor: 1 NPN Pre-Biased, 1 PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Bersenang-senang
NSVMUN5212DW1T1G
ON Semiconductor

NSVMUN5212DW1T1G

bahagian bahagian: 111873

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

Bersenang-senang
NSTB60BDW1T1G
ON Semiconductor

NSTB60BDW1T1G

bahagian bahagian: 116194

Jenis Transistor: 1 NPN Pre-Biased, 1 PNP, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 120 @ 5mA, 10V,

Bersenang-senang
NSBC113EPDXV6T1G
ON Semiconductor

NSBC113EPDXV6T1G

bahagian bahagian: 191549

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 1 kOhms, Perintang - Pangkalan Pemancar (R2): 1 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V,

Bersenang-senang
NSBA143ZDXV6T1G
ON Semiconductor

NSBA143ZDXV6T1G

bahagian bahagian: 13232

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Bersenang-senang
NSBC143ZPDXV6T5G
ON Semiconductor

NSBC143ZPDXV6T5G

bahagian bahagian: 1414

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Bersenang-senang
SMUN5335DW1T2G
ON Semiconductor

SMUN5335DW1T2G

bahagian bahagian: 183726

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Bersenang-senang
MUN5232DW1T1G
ON Semiconductor

MUN5232DW1T1G

bahagian bahagian: 132657

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V,

Bersenang-senang
MUN5116DW1T1
ON Semiconductor

MUN5116DW1T1

bahagian bahagian: 3233

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

Bersenang-senang
DMC264040R
Panasonic Electronic Components

DMC264040R

bahagian bahagian: 141479

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Bersenang-senang
DMA261000R
Panasonic Electronic Components

DMA261000R

bahagian bahagian: 148621

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

Bersenang-senang
DMA9640T0R
Panasonic Electronic Components

DMA9640T0R

bahagian bahagian: 175874

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Bersenang-senang
UP0339600L
Panasonic Electronic Components

UP0339600L

bahagian bahagian: 1437

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, 22 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V / 80 @ 5mA, 10V,

Bersenang-senang
XP0111500L
Panasonic Electronic Components

XP0111500L

bahagian bahagian: 1428

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

Bersenang-senang
RN1963(TE85L,F)
Toshiba Semiconductor and Storage

RN1963(TE85L,F)

bahagian bahagian: 101550

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Bersenang-senang
RN2902,LF
Toshiba Semiconductor and Storage

RN2902,LF

bahagian bahagian: 1472

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Bersenang-senang
RN2911,LF
Toshiba Semiconductor and Storage

RN2911,LF

bahagian bahagian: 148274

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Bersenang-senang
PUMB11,115
Nexperia USA Inc.

PUMB11,115

bahagian bahagian: 183088

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

Bersenang-senang
PEMB11,115
Nexperia USA Inc.

PEMB11,115

bahagian bahagian: 160190

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

Bersenang-senang
PBLS4005D,115
Nexperia USA Inc.

PBLS4005D,115

bahagian bahagian: 151505

Jenis Transistor: 1 NPN Pre-Biased, 1 PNP, Semasa - Pemungut (Ic) (Maks): 100mA, 700mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, 40V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V / 300 @ 100mA, 5V,

Bersenang-senang
PBLS4004D,115
Nexperia USA Inc.

PBLS4004D,115

bahagian bahagian: 177865

Jenis Transistor: 1 NPN Pre-Biased, 1 PNP, Semasa - Pemungut (Ic) (Maks): 100mA, 700mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, 40V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V / 300 @ 100mA, 5V,

Bersenang-senang
PUMB9,115
Nexperia USA Inc.

PUMB9,115

bahagian bahagian: 180837

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V,

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