Menu
MelayuMelayu
Rfqs / order.
0Rfqs / order.

Transistor - Bipolar (BJT) - Susunan, Pra-Bias

RN2709JE(TE85L,F)
Toshiba Semiconductor and Storage

RN2709JE(TE85L,F)

bahagian bahagian: 180658

Jenis Transistor: 2 PNP - Pre-Biased (Dual) (Emitter Coupled), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Bersenang-senang
RN2604(TE85L,F)
Toshiba Semiconductor and Storage

RN2604(TE85L,F)

bahagian bahagian: 165277

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Bersenang-senang
RN1902FE,LF(CT
Toshiba Semiconductor and Storage

RN1902FE,LF(CT

bahagian bahagian: 121303

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 1 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Bersenang-senang
RN4901(T5L,F,T)
Toshiba Semiconductor and Storage

RN4901(T5L,F,T)

bahagian bahagian: 1552

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Bersenang-senang
RN4902FE,LF(CT
Toshiba Semiconductor and Storage

RN4902FE,LF(CT

bahagian bahagian: 196360

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Bersenang-senang
RN1965(TE85L,F)
Toshiba Semiconductor and Storage

RN1965(TE85L,F)

bahagian bahagian: 9983

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Bersenang-senang
RN1963FE(TE85L,F)
Toshiba Semiconductor and Storage

RN1963FE(TE85L,F)

bahagian bahagian: 1435

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Bersenang-senang
PBLS6001D,115
Nexperia USA Inc.

PBLS6001D,115

bahagian bahagian: 153332

Jenis Transistor: 1 NPN Pre-Biased, 1 PNP, Semasa - Pemungut (Ic) (Maks): 100mA, 700mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, 60V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 2.2 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V / 150 @ 500mA, 5V,

Bersenang-senang
PUMH9,165
Nexperia USA Inc.

PUMH9,165

bahagian bahagian: 136378

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V,

Bersenang-senang
PUMB1,135
Nexperia USA Inc.

PUMB1,135

bahagian bahagian: 184667

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V,

Bersenang-senang
PUMD6/ZLX
Nexperia USA Inc.

PUMD6/ZLX

bahagian bahagian: 1479

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V,

Bersenang-senang
PUMD10,115
Nexperia USA Inc.

PUMD10,115

bahagian bahagian: 176387

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V,

Bersenang-senang
PUMH10,125
Nexperia USA Inc.

PUMH10,125

bahagian bahagian: 139152

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V,

Bersenang-senang
NSBC123EDXV6T1G
ON Semiconductor

NSBC123EDXV6T1G

bahagian bahagian: 51685

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 2.2 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V,

Bersenang-senang
NSBA123JDXV6T1G
ON Semiconductor

NSBA123JDXV6T1G

bahagian bahagian: 3224

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Bersenang-senang
EMF5XV6T5
ON Semiconductor

EMF5XV6T5

bahagian bahagian: 5392

Jenis Transistor: 1 NPN Pre-Biased, 1 PNP, Semasa - Pemungut (Ic) (Maks): 100mA, 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, 12V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 270 @ 10mA, 2V,

Bersenang-senang
NSBC123JPDXV6T1G
ON Semiconductor

NSBC123JPDXV6T1G

bahagian bahagian: 150122

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Bersenang-senang
NSBC124EDXV6T5G
ON Semiconductor

NSBC124EDXV6T5G

bahagian bahagian: 158612

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

Bersenang-senang
NSVB143TPDXV6T1G
ON Semiconductor

NSVB143TPDXV6T1G

bahagian bahagian: 118474

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

Bersenang-senang
XP0621300L
Panasonic Electronic Components

XP0621300L

bahagian bahagian: 131306

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Bersenang-senang
XN04A8800L
Panasonic Electronic Components

XN04A8800L

bahagian bahagian: 1476

Jenis Transistor: 1 PNP Pre-Biased, 1 NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan Pemancar (R2): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V / 150 @ 2mA, 10V,

Bersenang-senang
UP04113G0L
Panasonic Electronic Components

UP04113G0L

bahagian bahagian: 1404

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Bersenang-senang
DMA5640M0R
Panasonic Electronic Components

DMA5640M0R

bahagian bahagian: 148059

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Bersenang-senang
DMA264010R
Panasonic Electronic Components

DMA264010R

bahagian bahagian: 199994

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

Bersenang-senang
UP0421100L
Panasonic Electronic Components

UP0421100L

bahagian bahagian: 1444

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

Bersenang-senang
XN0411100L
Panasonic Electronic Components

XN0411100L

bahagian bahagian: 1396

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

Bersenang-senang
XN0431400L
Panasonic Electronic Components

XN0431400L

bahagian bahagian: 1480

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Bersenang-senang
XP0421200L
Panasonic Electronic Components

XP0421200L

bahagian bahagian: 1468

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

Bersenang-senang
XP0331100L
Panasonic Electronic Components

XP0331100L

bahagian bahagian: 1445

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

Bersenang-senang
DDC123JH-7
Diodes Incorporated

DDC123JH-7

bahagian bahagian: 186448

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Bersenang-senang
DCX123JH-7
Diodes Incorporated

DCX123JH-7

bahagian bahagian: 128905

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Bersenang-senang
DCX142JU-7-F
Diodes Incorporated

DCX142JU-7-F

bahagian bahagian: 195388

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 470 Ohms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 5V,

Bersenang-senang
UMG4N-7
Diodes Incorporated

UMG4N-7

bahagian bahagian: 197132

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

Bersenang-senang
EMA11T2R
Rohm Semiconductor

EMA11T2R

bahagian bahagian: 175669

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Bersenang-senang
UMD3NTR
Rohm Semiconductor

UMD3NTR

bahagian bahagian: 185071

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

Bersenang-senang
UMH9NTN
Rohm Semiconductor

UMH9NTN

bahagian bahagian: 156300

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

Bersenang-senang