Transistor - FET, MOSFET - Susunan

ALD114835PCL

bahagian bahagian: 21080

Jenis FET: 4 N-Channel, Matched Pair, Ciri FET: Depletion Mode, Saliran ke Voltan Sumber (Vdss): 10.6V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12mA, 3mA, Rds On (Maks) @ Id, Vgs: 540 Ohm @ 0V, Vgs (th) (Maks) @ Id: 3.45V @ 1µA,

ALD114804PCL

bahagian bahagian: 23866

Jenis FET: 4 N-Channel, Matched Pair, Ciri FET: Depletion Mode, Saliran ke Voltan Sumber (Vdss): 10.6V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12mA, 3mA, Rds On (Maks) @ Id, Vgs: 500 Ohm @ 3.6V, Vgs (th) (Maks) @ Id: 360mV @ 1µA,

ALD1110EPAL

bahagian bahagian: 20563

Jenis FET: 2 N-Channel (Dual) Matched Pair, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 10V, Rds On (Maks) @ Id, Vgs: 500 Ohm @ 5V, Vgs (th) (Maks) @ Id: 1.01V @ 1µA,

ALD210800PCL

bahagian bahagian: 22423

Jenis FET: 4 N-Channel, Matched Pair, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 10.6V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 80mA, Rds On (Maks) @ Id, Vgs: 25 Ohm, Vgs (th) (Maks) @ Id: 20mV @ 10µA,

ALD212900SAL

bahagian bahagian: 29389

Jenis FET: 2 N-Channel (Dual) Matched Pair, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 10.6V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 80mA, Rds On (Maks) @ Id, Vgs: 14 Ohm, Vgs (th) (Maks) @ Id: 20mV @ 20µA,

ALD1102SAL

bahagian bahagian: 18848

Jenis FET: 2 P-Channel (Dual) Matched Pair, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 10.6V, Rds On (Maks) @ Id, Vgs: 270 Ohm @ 5V, Vgs (th) (Maks) @ Id: 1.2V @ 10µA,

ALD310704APCL

bahagian bahagian: 13531

Jenis FET: 4 P-Channel, Matched Pair, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 8V, Vgs (th) (Maks) @ Id: 380mV @ 1µA,

ALD110904PAL

bahagian bahagian: 22024

Jenis FET: 2 N-Channel (Dual) Matched Pair, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 10.6V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12mA, 3mA, Rds On (Maks) @ Id, Vgs: 500 Ohm @ 4.4V, Vgs (th) (Maks) @ Id: 420mV @ 1µA,

ALD110904SAL

bahagian bahagian: 21998

Jenis FET: 2 N-Channel (Dual) Matched Pair, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 10.6V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12mA, 3mA, Rds On (Maks) @ Id, Vgs: 500 Ohm @ 4.4V, Vgs (th) (Maks) @ Id: 420mV @ 1µA,

ALD110808APCL

bahagian bahagian: 15203

Jenis FET: 4 N-Channel, Matched Pair, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 10.6V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12mA, 3mA, Rds On (Maks) @ Id, Vgs: 500 Ohm @ 4.8V, Vgs (th) (Maks) @ Id: 810mV @ 1µA,

ALD110900PAL

bahagian bahagian: 21972

Jenis FET: 2 N-Channel (Dual) Matched Pair, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 10.6V, Rds On (Maks) @ Id, Vgs: 500 Ohm @ 4V, Vgs (th) (Maks) @ Id: 20mV @ 1µA,

APTMC120TAM33CTPAG

bahagian bahagian: 107

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 78A (Tc), Rds On (Maks) @ Id, Vgs: 33 mOhm @ 60A, 20V, Vgs (th) (Maks) @ Id: 2.2V @ 3mA (Typ),

APTM50H14FT3G

bahagian bahagian: 1149

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 26A, Rds On (Maks) @ Id, Vgs: 168 mOhm @ 13A, 10V, Vgs (th) (Maks) @ Id: 5V @ 1mA,

APTMC120AM25CT3AG

bahagian bahagian: 283

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 113A (Tc), Rds On (Maks) @ Id, Vgs: 25 mOhm @ 80A, 20V, Vgs (th) (Maks) @ Id: 2.2V @ 4mA (Typ),

APTSM120AM08CT6AG

bahagian bahagian: 144

Jenis FET: 2 N-Channel (Dual), Schottky, Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 370A (Tc), Rds On (Maks) @ Id, Vgs: 10 mOhm @ 200A, 20V, Vgs (th) (Maks) @ Id: 3V @ 10mA,

APTSM120TAM33CTPAG

bahagian bahagian: 177

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 112A (Tc), Rds On (Maks) @ Id, Vgs: 33 mOhm @ 60A, 20V, Vgs (th) (Maks) @ Id: 3V @ 3mA,

APTSM120AM09CD3AG

bahagian bahagian: 195

Jenis FET: 2 N-Channel (Dual), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 337A (Tc), Rds On (Maks) @ Id, Vgs: 11 mOhm @ 180A, 20V, Vgs (th) (Maks) @ Id: 3V @ 9mA,

APTSM120AM14CD3AG

bahagian bahagian: 248

Jenis FET: 2 N-Channel (Dual), Schottky, Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 337A (Tc), Rds On (Maks) @ Id, Vgs: 11 mOhm @ 180A, 20V, Vgs (th) (Maks) @ Id: 3V @ 9mA,

APTSM120AM55CT1AG

bahagian bahagian: 589

Jenis FET: 2 N-Channel (Dual), Schottky, Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 74A (Tc), Rds On (Maks) @ Id, Vgs: 50 mOhm @ 40A, 20V, Vgs (th) (Maks) @ Id: 3V @ 2mA,

APTSM120AM25CT3AG

bahagian bahagian: 290

Jenis FET: 2 N-Channel (Dual), Schottky, Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 148A (Tc), Rds On (Maks) @ Id, Vgs: 25 mOhm @ 80A, 20V, Vgs (th) (Maks) @ Id: 3V @ 4mA,

APTMC120AM08CD3AG

bahagian bahagian: 68

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 250A (Tc), Rds On (Maks) @ Id, Vgs: 10 mOhm @ 200A, 20V, Vgs (th) (Maks) @ Id: 2.2V @ 10mA (Typ),

APTM50HM65FT3G

bahagian bahagian: 692

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 51A, Rds On (Maks) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

APTM50AM38STG

bahagian bahagian: 559

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 90A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 45A, 10V, Vgs (th) (Maks) @ Id: 5V @ 5mA,

AO4828

bahagian bahagian: 197

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Rds On (Maks) @ Id, Vgs: 56 mOhm @ 4.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

AOE6936

bahagian bahagian: 241

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 55A (Tc), 85A (Tc), Rds On (Maks) @ Id, Vgs: 5 mOhm @ 20A, 10V, 2 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA, 2.1V @ 250µA,

AO4862

bahagian bahagian: 168294

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 4.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

AON4803

bahagian bahagian: 144807

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.4A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 3.4A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

AO8810

bahagian bahagian: 162690

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 7A, 4.5V, Vgs (th) (Maks) @ Id: 1.1V @ 250µA,

AON6996

bahagian bahagian: 180862

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A, 60A, Rds On (Maks) @ Id, Vgs: 5.2 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

AON6850

bahagian bahagian: 99071

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

AO4614A

bahagian bahagian: 181100

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, 5A, Rds On (Maks) @ Id, Vgs: 31 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

AO6602L

bahagian bahagian: 108988

Jenis FET: N and P-Channel Complementary, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Rds On (Maks) @ Id, Vgs: 75 mOhm @ 3.1A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

AOC3868

bahagian bahagian: 244

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Standard, Vgs (th) (Maks) @ Id: 1.1V @ 250µA,

AOE6922

bahagian bahagian: 231

AO8822

bahagian bahagian: 186647

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

AO6800

bahagian bahagian: 191185

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.4A, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 3.4A, 10V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,