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Transistor - FET, MOSFET - Susunan

APTM120H29FG
Microsemi Corporation

APTM120H29FG

bahagian bahagian: 261

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 34A, Rds On (Maks) @ Id, Vgs: 348 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 5V @ 5mA,

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APTM10HM05FG
Microsemi Corporation

APTM10HM05FG

bahagian bahagian: 446

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 278A, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 125A, 10V, Vgs (th) (Maks) @ Id: 4V @ 5mA,

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APTM50H15FT1G
Microsemi Corporation

APTM50H15FT1G

bahagian bahagian: 2107

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 25A, Rds On (Maks) @ Id, Vgs: 180 mOhm @ 21A, 10V, Vgs (th) (Maks) @ Id: 5V @ 1mA,

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APTMC170AM30CT1AG
Microsemi Corporation

APTMC170AM30CT1AG

bahagian bahagian: 139

Jenis FET: 2 N Channel (Phase Leg), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1700V (1.7kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Rds On (Maks) @ Id, Vgs: 30 mOhm @ 100A, 20V, Vgs (th) (Maks) @ Id: 2.3V @ 5mA (Typ),

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APTM08TAM04PG
Microsemi Corporation

APTM08TAM04PG

bahagian bahagian: 1065

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A, Rds On (Maks) @ Id, Vgs: 4.5 mOhm @ 60A, 10V, Vgs (th) (Maks) @ Id: 4V @ 1mA,

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APTM20HM08FG
Microsemi Corporation

APTM20HM08FG

bahagian bahagian: 381

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 208A, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 104A, 10V, Vgs (th) (Maks) @ Id: 5V @ 5mA,

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APTM20AM05FG
Microsemi Corporation

APTM20AM05FG

bahagian bahagian: 433

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 317A, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 158.5A, 10V, Vgs (th) (Maks) @ Id: 5V @ 10mA,

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APTM10HM09FT3G
Microsemi Corporation

APTM10HM09FT3G

bahagian bahagian: 940

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 139A, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs (th) (Maks) @ Id: 4V @ 2.5mA,

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APTM10HM19FT3G
Microsemi Corporation

APTM10HM19FT3G

bahagian bahagian: 1470

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 70A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 35A, 10V, Vgs (th) (Maks) @ Id: 4V @ 1mA,

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APTC60HM83FT2G
Microsemi Corporation

APTC60HM83FT2G

bahagian bahagian: 1719

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 36A, Rds On (Maks) @ Id, Vgs: 83 mOhm @ 18A, 10V, Vgs (th) (Maks) @ Id: 5V @ 3mA,

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APTC80H15T1G
Microsemi Corporation

APTC80H15T1G

bahagian bahagian: 1728

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 28A, Rds On (Maks) @ Id, Vgs: 150 mOhm @ 14A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 2mA,

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APTM50AM38SCTG
Microsemi Corporation

APTM50AM38SCTG

bahagian bahagian: 599

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 90A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 45A, 10V, Vgs (th) (Maks) @ Id: 5V @ 5mA,

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APTM20HM10FG
Microsemi Corporation

APTM20HM10FG

bahagian bahagian: 489

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 175A, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 87.5A, 10V, Vgs (th) (Maks) @ Id: 5V @ 5mA,

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APTC60HM45SCTG
Microsemi Corporation

APTC60HM45SCTG

bahagian bahagian: 743

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Super Junction, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 49A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 22.5A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 3mA,

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APTC80H15T3G
Microsemi Corporation

APTC80H15T3G

bahagian bahagian: 1759

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 28A, Rds On (Maks) @ Id, Vgs: 150 mOhm @ 14A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 2mA,

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APTC60HM35T3G
Microsemi Corporation

APTC60HM35T3G

bahagian bahagian: 248

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 72A, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 72A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 5.4mA,

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APTM50TAM65FPG
Microsemi Corporation

APTM50TAM65FPG

bahagian bahagian: 545

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 51A, Rds On (Maks) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

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APTC60TDUM35PG
Microsemi Corporation

APTC60TDUM35PG

bahagian bahagian: 688

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 72A, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 72A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 5.4mA,

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APTM10AM05FTG
Microsemi Corporation

APTM10AM05FTG

bahagian bahagian: 820

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 278A, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 125A, 10V, Vgs (th) (Maks) @ Id: 4V @ 5mA,

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APTC60HM70RT3G
Microsemi Corporation

APTC60HM70RT3G

bahagian bahagian: 1479

Jenis FET: 4 N-Channel (H-Bridge) + Bridge Rectifier, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 39A, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 2.7mA,

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APTC60HM45T1G
Microsemi Corporation

APTC60HM45T1G

bahagian bahagian: 1300

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 49A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 3mA,

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APTC80TA15PG
Microsemi Corporation

APTC80TA15PG

bahagian bahagian: 1022

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 28A, Rds On (Maks) @ Id, Vgs: 150 mOhm @ 14A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 2mA,

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APTC80H29T3G
Microsemi Corporation

APTC80H29T3G

bahagian bahagian: 2362

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A, Rds On (Maks) @ Id, Vgs: 290 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 1mA,

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APTM50HM75SCTG
Microsemi Corporation

APTM50HM75SCTG

bahagian bahagian: 667

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 46A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 23A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

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APTMC120AM20CT1AG
Microsemi Corporation

APTMC120AM20CT1AG

bahagian bahagian: 173

Jenis FET: 2 N Channel (Phase Leg), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 143A (Tc), Rds On (Maks) @ Id, Vgs: 17 mOhm @ 100A, 20V, Vgs (th) (Maks) @ Id: 2.3V @ 2mA (Typ),

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APTM120A20DG
Microsemi Corporation

APTM120A20DG

bahagian bahagian: 538

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A, Rds On (Maks) @ Id, Vgs: 240 mOhm @ 25A, 10V, Vgs (th) (Maks) @ Id: 5V @ 6mA,

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APTC60AM45T1G
Microsemi Corporation

APTC60AM45T1G

bahagian bahagian: 293

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 49A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 3mA,

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APTMC120TAM34CT3AG
Microsemi Corporation

APTMC120TAM34CT3AG

bahagian bahagian: 251

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 74A (Tc), Rds On (Maks) @ Id, Vgs: 34 mOhm @ 50A, 20V, Vgs (th) (Maks) @ Id: 4V @ 15mA,

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APTM50DDAM65T3G
Microsemi Corporation

APTM50DDAM65T3G

bahagian bahagian: 1269

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 51A, Rds On (Maks) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

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APTC60DDAM24T3G
Microsemi Corporation

APTC60DDAM24T3G

bahagian bahagian: 1114

Jenis FET: 2 N Channel (Dual Buck Chopper), Ciri FET: Super Junction, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 95A, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 5mA,

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APTM10DSKM19T3G
Microsemi Corporation

APTM10DSKM19T3G

bahagian bahagian: 1965

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 70A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 35A, 10V, Vgs (th) (Maks) @ Id: 4V @ 1mA,

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APTM20AM06SG
Microsemi Corporation

APTM20AM06SG

bahagian bahagian: 553

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 300A, Rds On (Maks) @ Id, Vgs: 7.2 mOhm @ 150A, 10V, Vgs (th) (Maks) @ Id: 5V @ 6mA,

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APTC60DDAM45T1G
Microsemi Corporation

APTC60DDAM45T1G

bahagian bahagian: 1722

Jenis FET: 2 N Channel (Dual Buck Chopper), Ciri FET: Super Junction, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 49A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 3mA,

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APTM100H18FG
Microsemi Corporation

APTM100H18FG

bahagian bahagian: 404

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1000V (1kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 43A, Rds On (Maks) @ Id, Vgs: 210 mOhm @ 21.5A, 10V, Vgs (th) (Maks) @ Id: 5V @ 5mA,

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APTM100H35FT3G
Microsemi Corporation

APTM100H35FT3G

bahagian bahagian: 784

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1000V (1kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 22A, Rds On (Maks) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

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APTM20TAM16FPG
Microsemi Corporation

APTM20TAM16FPG

bahagian bahagian: 537

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 104A, Rds On (Maks) @ Id, Vgs: 19 mOhm @ 52A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

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