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Transistor - FET, MOSFET - Susunan

SI3981DV-T1-GE3
Vishay Siliconix

SI3981DV-T1-GE3

bahagian bahagian: 2791

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.6A, Rds On (Maks) @ Id, Vgs: 185 mOhm @ 1.9A, 4.5V, Vgs (th) (Maks) @ Id: 1.1V @ 250µA,

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SI5920DC-T1-E3
Vishay Siliconix

SI5920DC-T1-E3

bahagian bahagian: 2798

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 32 mOhm @ 6.8A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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SI1913EDH-T1-E3
Vishay Siliconix

SI1913EDH-T1-E3

bahagian bahagian: 2794

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 880mA, Rds On (Maks) @ Id, Vgs: 490 mOhm @ 880mA, 4.5V, Vgs (th) (Maks) @ Id: 450mV @ 100µA,

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SI7214DN-T1-GE3
Vishay Siliconix

SI7214DN-T1-GE3

bahagian bahagian: 99144

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.6A, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 6.4A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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SI6981DQ-T1-GE3
Vishay Siliconix

SI6981DQ-T1-GE3

bahagian bahagian: 2836

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.1A, Rds On (Maks) @ Id, Vgs: 31 mOhm @ 4.8A, 4.5V, Vgs (th) (Maks) @ Id: 900mV @ 300µA,

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SI6562DQ-T1-E3
Vishay Siliconix

SI6562DQ-T1-E3

bahagian bahagian: 3304

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V, Vgs (th) (Maks) @ Id: 600mV @ 250µA (Min),

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SIZ342DT-T1-GE3
Vishay Siliconix

SIZ342DT-T1-GE3

bahagian bahagian: 178805

Jenis FET: 2 N-Channel (Dual), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15.7A (Ta), 100A (Tc), Rds On (Maks) @ Id, Vgs: 11.5 mOhm @ 14A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 250µA,

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SI4330DY-T1-E3
Vishay Siliconix

SI4330DY-T1-E3

bahagian bahagian: 2782

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.6A, Rds On (Maks) @ Id, Vgs: 16.5 mOhm @ 8.7A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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SI4953ADY-T1-GE3
Vishay Siliconix

SI4953ADY-T1-GE3

bahagian bahagian: 2804

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.7A, Rds On (Maks) @ Id, Vgs: 53 mOhm @ 4.9A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

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SI4622DY-T1-GE3
Vishay Siliconix

SI4622DY-T1-GE3

bahagian bahagian: 2878

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 16 mOhm @ 9.6A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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SI9934BDY-T1-E3
Vishay Siliconix

SI9934BDY-T1-E3

bahagian bahagian: 3305

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.8A, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 6.4A, 4.5V, Vgs (th) (Maks) @ Id: 1.4V @ 250µA,

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SI3948DV-T1-E3
Vishay Siliconix

SI3948DV-T1-E3

bahagian bahagian: 2733

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Rds On (Maks) @ Id, Vgs: 105 mOhm @ 2.5A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

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SI4914BDY-T1-E3
Vishay Siliconix

SI4914BDY-T1-E3

bahagian bahagian: 118968

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.4A, 8A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2.7V @ 250µA,

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SI4618DY-T1-GE3
Vishay Siliconix

SI4618DY-T1-GE3

bahagian bahagian: 64981

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, 15.2A, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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EMH2408-TL-H
ON Semiconductor

EMH2408-TL-H

bahagian bahagian: 2843

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 4A, 4.5V,

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FDS8934A
ON Semiconductor

FDS8934A

bahagian bahagian: 2753

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 4A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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MMDF2N02ER2G
ON Semiconductor

MMDF2N02ER2G

bahagian bahagian: 2690

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.6A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 2.2A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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NTHD2102PT1G
ON Semiconductor

NTHD2102PT1G

bahagian bahagian: 3360

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.4A, Rds On (Maks) @ Id, Vgs: 58 mOhm @ 3.4A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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FW276-TL-2H
ON Semiconductor

FW276-TL-2H

bahagian bahagian: 3348

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 450V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 700mA, Rds On (Maks) @ Id, Vgs: 12.1 Ohm @ 350mA, 10V, Vgs (th) (Maks) @ Id: 4.5V @ 1mA,

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NVMD6N03R2G
ON Semiconductor

NVMD6N03R2G

bahagian bahagian: 2901

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 32 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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MCH6601-TL-E
ON Semiconductor

MCH6601-TL-E

bahagian bahagian: 168759

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA, Rds On (Maks) @ Id, Vgs: 10.4 Ohm @ 50mA, 4V,

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NTQD6866R2G
ON Semiconductor

NTQD6866R2G

bahagian bahagian: 2711

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.7A, Rds On (Maks) @ Id, Vgs: 32 mOhm @ 6.9A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

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NTUD3128NT5G
ON Semiconductor

NTUD3128NT5G

bahagian bahagian: 2747

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 160mA, Rds On (Maks) @ Id, Vgs: 3 Ohm @ 100mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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IRF5852
Infineon Technologies

IRF5852

bahagian bahagian: 2710

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.7A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V, Vgs (th) (Maks) @ Id: 1.25V @ 250µA,

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IRF7751TRPBF
Infineon Technologies

IRF7751TRPBF

bahagian bahagian: 2786

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 4.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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IRF7504TR
Infineon Technologies

IRF7504TR

bahagian bahagian: 2662

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.7A, Rds On (Maks) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V, Vgs (th) (Maks) @ Id: 700mV @ 250µA,

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IRF7319PBF
Infineon Technologies

IRF7319PBF

bahagian bahagian: 85832

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 5.8A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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IRF7509TR
Infineon Technologies

IRF7509TR

bahagian bahagian: 2686

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.7A, 2A, Rds On (Maks) @ Id, Vgs: 110 mOhm @ 1.4A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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IRF7303QTRPBF
Infineon Technologies

IRF7303QTRPBF

bahagian bahagian: 2779

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.9A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 2.4A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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IRF6723M2DTRPBF
Infineon Technologies

IRF6723M2DTRPBF

bahagian bahagian: 2819

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A, Rds On (Maks) @ Id, Vgs: 6.6 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2.35V @ 25µA,

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IRFH4255DTRPBF
Infineon Technologies

IRFH4255DTRPBF

bahagian bahagian: 2936

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 64A, 105A, Rds On (Maks) @ Id, Vgs: 3.2 mOhm @ 30A, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 35µA,

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ZXMP3F37DN8TA
Diodes Incorporated

ZXMP3F37DN8TA

bahagian bahagian: 2938

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.7A, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 7.1A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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TPC8212-H(TE12LQ,M
Toshiba Semiconductor and Storage

TPC8212-H(TE12LQ,M

bahagian bahagian: 2781

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 2.3V @ 1mA,

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IXTL2X220N075T
IXYS

IXTL2X220N075T

bahagian bahagian: 2763

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A, Rds On (Maks) @ Id, Vgs: 5.5 mOhm @ 50A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

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SP8K1TB
Rohm Semiconductor

SP8K1TB

bahagian bahagian: 2651

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 51 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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UP04878G0L
Panasonic Electronic Components

UP04878G0L

bahagian bahagian: 2789

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA, Rds On (Maks) @ Id, Vgs: 12 Ohm @ 10mA, 4V, Vgs (th) (Maks) @ Id: 1.5V @ 1µA,

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